Diodes Incorporated 1N5393S-T

Overview

1N5393S-T from Diodes Incorporated is a 200V, 1.5A general-purpose silicon rectifier diode in DO-41 package with 1.1V forward voltage drop at 1.5A, 50A non-repetitive surge rating, and 5.0μA reverse leakage at 25°C, used in AC/DC power supplies and input stage rectification.

For engineers reviewing the 1N5393S-T datasheet, 1N5393S-T pinout, 1N5393S-T application, or 1N5393S-T equivalent, key selection criteria include peak repetitive reverse voltage (200V), average rectified current (1.5A @ 70°C), thermal resistance (25°C/W junction-to-lead), and DO-41 mechanical compatibility in low-cost linear power supplies.

Technical Context

This axial-lead rectifier operates in single-phase, half-wave configurations with resistive or inductive loads at 60Hz; capacitive loads require 20% current derating. It exhibits fast switching behavior enabled by low stored charge and optimized doping profile.

Thermal performance is defined by junction-to-lead resistance of 25°C/W and junction-to-ambient resistance of 55°C/W (with leads held at ambient at 9.5mm from case), supporting reliable operation from –65°C to +150°C.

Key Specifications

Pinout & Package

Package: DO-41 molded plastic case (UL 94V-0), axial-leaded, cathode indicated by band. Dimensions: A = 25.40 mm max length, B = 4.06–5.21 mm body diameter, C = 0.71–0.864 mm lead diameter, D = 2.00–2.72 mm lead spacing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar rectifier applications.

Compared with 1N4003-T and 1N5393-T, the 1N5393S-T uniquely balances 1.5A current capacity, DO-41 footprint compatibility, and 200V blocking in a RoHS-compliant, low-VF rectifier-making it optimal for cost-sensitive, space-limited linear power supplies requiring full-rated conduction.

Availability

1N5393S-T is available at Aetrix Electronics and suitable for AC/DC wall adapters, industrial control power supplies, consumer audio power stages, and LED driver input rectification requiring stable component supply and long-term obsolescence management.

Supply support for 1N5393S-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

The 1N539x/S series belongs to Diodes' general-purpose rectifier product line, engineered for cost-effective, high-reliability AC/DC conversion in consumer, industrial, and computing power applications.

FAQ

What is the maximum allowable junction temperature for 1N5393S-T?

The absolute maximum junction temperature is +150°C, as specified in the datasheet's Operating and Storage Temperature Range. Sustained operation near this limit requires thermal design ensuring RθJA ≤ 55°C/W with proper PCB copper area and ambient airflow, especially under full 1.5A load at elevated ambient temperatures.

Is 1N5393S-T suitable for use in full-wave bridge configurations?

Yes-each 1N5393S-T diode can serve as one leg of a discrete full-wave bridge rectifier. Four units provide 200V PIV and 1.5A average output current. Ensure matched thermal mounting and equal current sharing; note that total forward drop will be 2.2V (2 × 1.1V) per conduction path.

Does the "S" suffix indicate a different semiconductor die than non-S parts?

No-the "S" suffix denotes DO-41 packaging only; electrical specifications (VRRM, IO, VFM, IFSM) are identical between 1N5393S-T (DO-41) and 1N5393-T (DO-15). The die and process are shared across both packages within the same 1N5393 family.

Can 1N5393S-T replace 1N4004 in existing designs?

Only if the design operates below 1.5A average current and does not exceed 200V reverse voltage. While both are DO-41 rectifiers, 1N4004 has 400V VRRM and 1.0A IO-so substituting 1N5393S-T reduces blocking voltage margin and increases current capability, requiring verification of worst-case reverse stress and thermal performance.