Taiwan Semiconductor Corporation 1N5398G

Overview

1N5398G from Taiwan Semiconductor is a general-purpose silicon rectifier diode rated for 1000 V peak repetitive reverse voltage (V_RRM), 1.5 A average forward current (I_F(AV)), and 30 A non-repetitive peak forward surge current (I_FSM). It operates across –55 °C to +150 °C junction temperature and is used in AC/DC power supply input stages, battery charger front-ends, and industrial control rectification circuits.

For engineers reviewing the 1N5398G datasheet, 1N5398G pinout, 1N5398G application, or 1N5398G equivalent, key selection criteria include its 1.1 V typical forward voltage at 1.5 A, 5 μA maximum reverse leakage at 1000 V, and DO-15 axial package with 25.4 mm minimum lead spacing - critical for creepage, thermal derating, and PCB layout in high-voltage designs.

Technical Context

The 1N5398G belongs to the 1N5391G–1N5399G family of standard recovery rectifiers with soft recovery characteristics and low reverse recovery charge (Q_rr ≤ 10 μC). Its 1.5 A I_F(AV) rating assumes 75 °C ambient with free-air convection and full-wave resistive load.

Thermal performance is defined by a 50 °C/W junction-to-ambient thermal resistance (R_θJA) in DO-15 package, and its 30 A I_FSM (8.3 ms half-sine) supports brief inrush events without degradation when operated within specified T_J limits.

Key Specifications

Pinout & Package

1N5398G uses a DO-15 axial-leaded package with cathode band marking. Leads are tinned copper-clad steel, 0.90 mm diameter, spaced ≥25.4 mm apart. Package meets JEDEC DO-15 outline standards.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar rectifier diode applications.

Compared with 1N5398G, 1N5408 offers higher current capacity but greater conduction loss, while STTH1L06 trades voltage rating and recovery softness for speed and lower forward drop - neither is pin-compatible, and both require layout and thermal redesign.

Availability

1N5398G is available at Aetrix Electronics and suitable for AC/DC power supply input stages, battery charger front-ends, and industrial control rectification requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for 1N5398G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated semiconductor manufacturer specializing in discrete power devices, including rectifiers, transistors, and TVS diodes, with ISO/TS 16949 and ISO 14001 certifications.

The 1N5391G–1N5399G series was designed for cost-effective, high-reliability general-purpose rectification in consumer, industrial, and lighting power systems where soft recovery and wide temperature operation are essential.

FAQ

What is the maximum junction temperature rating for the 1N5398G?

The 1N5398G has a maximum rated junction temperature (T_J) of +150 °C. This allows reliable operation in high-temperature environments such as enclosed industrial power supplies or automotive under-hood applications. Derating curves in the official TSC datasheet specify that I_F(AV) must be reduced linearly above 75 °C ambient to maintain safe T_J - the 1N5398G remains functional up to its absolute limit, but sustained operation near 150 °C requires careful thermal design.

Is the 1N5398G suitable for use in a full-wave bridge rectifier configuration?

Yes, the 1N5398G is commonly used in discrete full-wave bridge rectifiers due to its 1000 V V_RRM, 1.5 A I_F(AV), and DO-15 package compatibility. Each 1N5398G handles one leg of the bridge; four units form a complete bridge capable of 1.5 A DC output. Its soft recovery behavior also helps suppress ringing in unfiltered bridge outputs, making the 1N5398G a preferred choice over ultra-fast diodes in cost-sensitive, low-noise applications.

What is the forward voltage drop of the 1N5398G at its rated current?

The 1N5398G exhibits a typical forward voltage drop (V_F) of 1.1 V at 1.5 A and 25 °C, rising to approximately 1.25 V at 150 °C junction temperature. This value is measured under pulsed conditions to avoid self-heating; in continuous operation, V_F stabilizes based on thermal equilibrium. The 1N5398G's V_F directly determines conduction losses - at 1.5 A, it dissipates ~1.65 W, requiring appropriate PCB copper area or heatsinking per TSC's DO-15 thermal guidelines.

Does the 1N5398G have a RoHS-compliant version?

Yes, the 1N5398G is RoHS-compliant and halogen-free, as confirmed by Taiwan Semiconductor's material declarations and G2309 revision documentation. The "G" suffix denotes green compound encapsulation meeting EU RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 1 moisture sensitivity. No lead, cadmium, mercury, hexavalent chromium, PBB, or PBDE substances exceed threshold limits - this applies to all units marked "1N5398G" with date code YWW format and factory code "F".

How does the 1N5398G compare to the 1N5397G in terms of voltage rating?

The 1N5398G is rated for 1000 V peak repetitive reverse voltage (V_RRM), whereas the 1N5397G is rated for 800 V V_RRM. Both share identical I_F(AV) (1.5 A), package (DO-15), and thermal specifications. The 1N5398G is selected when system-level transients or 230 VAC + margin requirements exceed 800 V - for example, in regions with unstable grids or designs targeting universal 100–240 VAC input with IEC 61000-4-5 surge immunity.