Taiwan Semiconductor Corporation 1N5400GHB0G

Overview

1N5400GHB0G from Taiwan Semiconductor is a glass-passivated standard rectifier diode rated for 3 A average forward current and 50 V repetitive peak reverse voltage in a DO-201AD package, featuring low forward voltage (1.1 V at 3 A, 25°C), high surge capability (125 A, 8.3 ms), and AEC-Q101 qualification for automotive-grade reliability.

For engineers reviewing the 1N5400GHB0G datasheet, 1N5400GHB0G pinout, 1N5400GHB0G application, or 1N5400GHB0G equivalent, key selection criteria include its 50 V V_RRM, 125 A I_FSM, DO-201AD mechanical form factor, AEC-Q101 compliance status, and thermal resistance (R_θJA = 45 °C/W).

Technical Context

This device operates as a single-die, unidirectional silicon rectifier with a glass-passivated PN junction, optimized for line-frequency and switching-mode power conversion where low conduction loss and robust surge handling are required. Its 150 °C maximum junction temperature and -55 °C to +150 °C storage range support operation in demanding industrial and automotive environments.

The 1N5400GHB0G exhibits 5 µA maximum reverse leakage at 25 °C and 100 µA at 125 °C under rated reverse voltage, with 25 pF typical junction capacitance at 1 MHz and 4.0 V bias - parameters critical for EMI control and high-frequency rectifier stability.

Key Specifications

Pinout & Package

DO-201AD axial-leaded package with cathode band marking; leads are pure tin-plated, solderable per J-STD-002, UL 94V-0 compliant molding compound, and JESD 201 Class 2 whisker resistance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar standard rectifier applications.

Compared with STTH3L06S and MUR420, the 1N5400GHB0G offers AEC-Q101 compliance and DO-201AD compatibility in cost-sensitive 50 V applications, while trading off higher voltage rating and ultrafast recovery for proven ruggedness and lower procurement complexity.

Availability

1N5400GHB0G is available at Aetrix Electronics and suitable for automotive battery chargers, industrial DC-DC converters, and general-purpose power supplies requiring stable component supply, AEC-Q101 validation, and DO-201AD through-hole assembly.

Supply support for 1N5400GHB0G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS diodes, MOSFETs, and LED drivers.

The 1N5400GHB0G belongs to TSC's AEC-Q101-qualified standard rectifier family, designed specifically for automotive and industrial power conversion systems requiring high surge immunity, low conduction loss, and long-term reliability under thermal cycling.

FAQ

What is the peak repetitive reverse voltage rating for the 1N5400GHB0G?

The 1N5400GHB0G has a repetitive peak reverse voltage (V_RRM) rating of 50 V. This value defines the maximum instantaneous reverse voltage the diode can block repeatedly without breakdown. It is verified per JEDEC test conditions and applies across the full operating temperature range (-55 °C to +150 °C). The 1N5400GHB0G is not rated for higher voltages - using it above 50 V risks catastrophic failure.

Is the 1N5400GHB0G AEC-Q101 qualified, and what does that cover?

Yes, the 1N5400GHB0G is AEC-Q101 qualified, as indicated by the "H" suffix in its ordering code. This qualification covers stress tests including high-temperature reverse bias, temperature cycling, highly accelerated life testing, and mechanical shock - all performed per AEC-Q101 Rev D. The 1N5400GHB0G passed these tests as a discrete diode, confirming suitability for automotive power electronics applications.

What is the forward voltage drop of the 1N5400GHB0G at rated current?

The 1N5400GHB0G has a maximum forward voltage (V_F) of 1.1 V at 3 A forward current and 25 °C junction temperature. This value is measured under pulsed conditions (0.3 ms pulse width) to avoid self-heating. At elevated temperatures or higher currents, V_F decreases slightly due to negative temperature coefficient, but system design should conservatively use 1.1 V for thermal calculations.

Does the 1N5400GHB0G have a specified junction-to-case thermal resistance?

Yes, the 1N5400GHB0G has a junction-to-case thermal resistance (R_θJC) of 15 °C/W, measured under standardized conditions per JESD51-1. This parameter enables accurate thermal modeling when the diode is mounted to a heatsink or metal chassis. For PCB-only operation, R_θJA = 45 °C/W applies, and derating curves in the datasheet must be followed to maintain TJ ≤ 150 °C.

What packaging options are available for the 1N5400GHB0G?

The 1N5400GHB0G is supplied in DO-201AD package with two standard packing formats: 1,250 units per tape-and-reel (ordering code 1N5400GHB0G) and 500 units per ammo box (ordering code 1N5400GHB0GA0G). Both options feature pure tin-plated leads compliant with J-STD-002 and meet JESD 201 Class 2 whisker resistance requirements.