Diodes Incorporated 1N5400G-T

Overview

1N5400G-T from Diodes Incorporated is a glass passivated silicon rectifier diode rated for 3.0A average forward current, 50V peak repetitive reverse voltage, and 125A non-repetitive surge current in DO-201AD package. It delivers low 1.1V forward voltage drop at 3.0A and operates across –65°C to +150°C, used in AC/DC power supplies, battery chargers, and DC motor control circuits.

For engineers reviewing the 1N5400G-T datasheet, 1N5400G-T pinout, 1N5400G-T application, or 1N5400G-T equivalent, key selection criteria include VRRM=50V, IF(AV)=3.0A, VFM=1.1V @3A, IFSM=125A, and DO-201AD thermal resistance (RθJA=16°C/W) for reliable conduction in industrial linear power stages.

Technical Context

This single-phase, half-wave rectifier is optimized for 60Hz resistive or inductive loads with no derating required below 55°C ambient. Its glass passivated junction ensures stable leakage performance (IRM ≤5.0μA @25°C) and fast recovery (trr=2.0μs), enabling efficient operation in unregulated offline power conversion.

The DO-201AD package provides mechanical robustness and thermal dissipation capability (RθJA=16°C/W), while the cathode band polarity marking and matte tin-plated leads ensure compatibility with automated assembly and IPC-compliant soldering processes.

Key Specifications

Pinout & Package

DO-201AD molded plastic package with axial leads, UL 94V-0 flammability rating, and cathode band marking. Weight: 1.12 g. Moisture sensitivity level: J-STD-020 Level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar general-purpose rectifier applications.

Compared with 1N5400G-T, 1N5400 lacks glass passivation and RoHS compliance, limiting modern production use; SB350 offers lower VFM but trades off leakage and temperature rating, requiring careful thermal and stability validation in mission-critical rails.

Availability

1N5400G-T is available at Aetrix Electronics and suitable for AC/DC power supplies, battery chargers, and industrial control power rails requiring stable component supply, tape-and-reel automation compatibility, and long-term lifecycle assurance.

Supply support for 1N5400G-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

The 1N540xG series belongs to Diodes' general-purpose rectifier product line, engineered for cost-effective, high-surge-capability AC/DC conversion in industrial, consumer, and computing power systems.

FAQ

What is the maximum allowable ambient temperature for continuous 3.0A operation?

The 1N5400G-T supports 3.0A average forward current only when ambient temperature is maintained at ≤55°C, with leads held at ambient temperature at a distance of 9.5mm from the case. Above 55°C, current must be derated per Figure 1 in the datasheet, reaching zero at 150°C ambient.

Can 1N5400G-T be used in capacitive-input filter circuits without derating?

No. For capacitive load configurations, the average rectified output current must be reduced by 20% per the datasheet. This accounts for higher peak currents and increased thermal stress caused by the leading-edge charging behavior of bulk capacitors.

Is the DO-201AD package compatible with wave soldering and reflow processes?

Yes - the matte tin-plated leads meet MIL-STD-202 Method 208 solderability requirements and are qualified for both wave soldering and lead-free reflow profiles. The DO-201AD body is rated UL 94V-0 and withstands standard PCB assembly thermal excursions.

How does the glass passivation affect long-term reliability compared to standard epoxy-passivated diodes?

Glass passivation provides superior moisture barrier properties and thermal stability, reducing long-term IRM drift and preventing corrosion-induced failure under humidity and thermal cycling. This results in measured IRM ≤5.0μA at 25°C versus ≥50μA for non-glass variants under identical conditions.