Taiwan Semiconductor Corporation 1N5401GHR0G

Overview

1N5401GHR0G from Taiwan Semiconductor is a glass-passivated, single-die standard rectifier diode rated for 3 A average forward current and 100 V repetitive peak reverse voltage in DO-201AD package, with 1.1 V max forward voltage at 3 A and 125 A non-repetitive surge capability - used in DC/DC converters and switching-mode inverters.

For engineers reviewing the 1N5401GHR0G datasheet, 1N5401GHR0G pinout, 1N5401GHR0G application, or 1N5401GHR0G equivalent, key selection criteria include V_RRM = 100 V, I_F = 3 A, V_F ≤ 1.1 V @ 3 A, I_FSM = 125 A, and DO-201AD mechanical compatibility with high-reliability industrial power supplies.

Technical Context

This device operates as a unidirectional silicon junction rectifier with glass-passivated chip construction ensuring stable performance under thermal cycling and humidity stress. Its 15 °C/W junction-to-case thermal resistance and 45 °C/W junction-to-ambient rating support continuous conduction in compact heatsink-limited designs.

The 1N5401GHR0G exhibits 5 µA max reverse leakage at 25 °C and 100 µA at 125 °C, with 25 pF junction capacitance at 4 V reverse bias and 1 MHz - enabling use in medium-frequency switching applications up to ~100 kHz without excessive capacitive loss.

Key Specifications

Pinout & Package

DO-201AD axial-leaded package with cathode band marking; leads are pure tin-plated, J-STD-002 solderable, and meet JESD201 Class 2 whisker resistance. Weight: ~1.20 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar standard rectifier applications.

Compared with STTH3L06S and MUR420, the 1N5401GHR0G offers lowest cost per amp in DO-201AD for ≤100 kHz applications, trading speed for ruggedness and surge tolerance - ideal for industrial line-frequency rectification where simplicity and reliability outweigh switching loss optimization.

Availability

1N5401GHR0G is available at Aetrix Electronics and suitable for DC/DC converters, switching inverters, and general-purpose power supplies requiring stable component supply, long-life availability, and AEC-Q101-compliant variants for automotive-adjacent systems.

Supply support for 1N5401GHR0G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS diodes, and MOSFETs for industrial and automotive markets.

The 1N540xG family was designed for cost-sensitive, high-reliability AC/DC front-end and output rectification in industrial power supplies, offering AEC-Q101 qualification, glass passivation, and UL 94V-0 packaging without premium pricing.

FAQ

What is the maximum repetitive peak reverse voltage (V_RRM) for the 1N5401GHR0G?

The 1N5401GHR0G has a V_RRM of 100 V, verified in the manufacturer's K2105 datasheet absolute maximum ratings table. This value defines the highest reverse voltage the diode can block repeatedly without breakdown. It is critical for selecting appropriate safety margins in rectifier circuits - for example, in 70 VAC input applications, a minimum 2× derating yields 140 V requirement, making 1N5402G (200 V) more suitable than the 1N5401GHR0G.

Does the 1N5401GHR0G have AEC-Q101 qualification?

Yes, the "H" suffix in 1N5401GHR0G confirms AEC-Q101 qualification per the ordering code table in the K2105 datasheet. This means the 1N5401GHR0G has undergone stress testing for automotive-grade reliability, including temperature cycling, humidity bias, and mechanical shock - making it suitable for under-dash modules, body control units, and other non-safety-critical automotive electronics where extended temperature range and long-term stability are required.

What is the forward voltage (V_F) of the 1N5401GHR0G at rated current?

The 1N5401GHR0G has a maximum forward voltage of 1.1 V at 3 A and 25 °C, as specified in the electrical characteristics table of the K2105 datasheet. This V_F value is measured under pulsed conditions (0.3 ms pulse width) to minimize self-heating. At elevated junction temperatures or continuous DC operation, V_F decreases slightly due to negative temperature coefficient, but thermal design must account for worst-case 1.1 V to ensure adequate power dissipation margin.

What package type does the 1N5401GHR0G use, and what are its mechanical features?

The 1N5401GHR0G uses the DO-201AD axial-leaded package, confirmed in the mechanical data and ordering information sections of the K2105 datasheet. Key features include UL 94V-0 flammability-rated epoxy molding, pure tin-plated leads compliant with J-STD-002 solderability, cathode band polarity marking, and JESD201 Class 2 whisker resistance - all supporting automated assembly and long-term field reliability in industrial environments.

How does the 1N5401GHR0G compare to the 1N5400G and 1N5402G in terms of voltage rating?

The 1N5401GHR0G is the 100 V variant in the 1N540xG series, positioned between the 50 V 1N5400G and the 200 V 1N5402G. All three share identical current (3 A), surge (125 A), thermal (R_θJC = 15 °C/W), and package (DO-201AD) specifications - only V_RRM, V_R(RMS), and corresponding reverse leakage differ. This allows direct BOM substitution based solely on system voltage requirements without layout or thermal redesign.