Taiwan Semiconductor Corporation 1N5406GH

Overview

1N5406GH from Taiwan Semiconductor is a glass-passivated, AEC-Q101 qualified standard rectifier diode in DO-201AD package, rated for 3 A average forward current, 600 V repetitive peak reverse voltage (V_RRM), and 125 A non-repetitive surge current - used in automotive-grade DC-DC converters and switching inverters.

For engineers reviewing the 1N5406GH datasheet, 1N5406GH pinout, 1N5406GH application, or 1N5406GH equivalent, key selection factors include its AEC-Q101 qualification, 1.0 V max forward voltage at 3 A, 5 µA max reverse leakage at 25°C, DO-201AD mechanical compatibility, and thermal resistance of 45°C/W junction-to-ambient.

Technical Context

The 1N5406GH is a single-die, silicon planar junction rectifier with glass passivation for enhanced moisture and contamination resistance. Its construction supports high reliability under thermal cycling and high-surge conditions typical in automotive power conversion.

It operates across –55°C to +150°C junction temperature range, features pure tin-plated leads compliant with J-STD-002 solderability, and meets JESD201 Class 2 whisker resistance - confirming suitability for under-hood automotive environments.

Key Specifications

Pinout & Package

Package: DO-201AD - axial-leaded, molded plastic case with cathode band marking; UL 94V-0 rated, 1.20 g weight, compatible with wave and reflow soldering per J-STD-002.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar standard rectifier applications.

Compared with STTH3L06S and MUR460E, the 1N5406GH delivers optimal balance of AEC-Q101 compliance, low V_F, and DO-201AD board-level integration - making it preferred for cost-sensitive, thermally constrained automotive and industrial rectification where switching frequency ≤100 kHz.

Availability

1N5406GH is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drive snubbers, and solar microinverter input stages requiring stable component supply with guaranteed AEC-Q101 traceability.

Supply support for 1N5406GH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving automotive, industrial, and consumer markets since 1979.

The 1N5406GH belongs to TSC's AEC-Q101-qualified standard rectifier family, engineered specifically for high-reliability power conversion in harsh-environment applications including engine control units and battery management systems.

FAQ

What is the peak repetitive reverse voltage rating for the 1N5406GH?

The 1N5406GH has a peak repetitive reverse voltage (V_RRM) rating of 600 V. This value is confirmed in the Absolute Maximum Ratings table of the official Taiwan Semiconductor datasheet (Version K2105). It defines the maximum reverse-biased voltage the device can block repeatedly without breakdown - critical for selecting appropriate input voltage margins in bridge rectifier or flyback transformer designs using the 1N5406GH.

Is the 1N5406GH AEC-Q101 qualified, and what does that mean for design use?

Yes, the 1N5406GH is explicitly AEC-Q101 qualified, as indicated by the "H" suffix in its ordering code and confirmed in the Features section of the Taiwan Semiconductor datasheet. This qualification certifies that the 1N5406GH has passed stress tests for temperature cycling, humidity, mechanical shock, and high-temperature operating life required for automotive electronic components - enabling its use in under-hood ECUs, body control modules, and other safety-critical vehicle subsystems.

What is the forward voltage drop of the 1N5406GH at its rated 3 A current?

The 1N5406GH exhibits a maximum forward voltage (V_F) of 1.0 V at 3 A and T_J = 25°C, per the Electrical Specifications table. This low V_F directly reduces conduction losses in power supplies - for example, yielding only 3 W of dissipation at full load versus 3.3 W for older 1N540xG variants - improving thermal performance and system efficiency in compact 1N5406GH-based designs.

Does the 1N5406GH have a specified junction-to-case thermal resistance?

Yes, the 1N5406GH has a junction-to-case thermal resistance (R_θJC) of 15°C/W, documented in the Thermal Performance section of the Taiwan Semiconductor datasheet. This parameter enables accurate thermal modeling when the 1N5406GH is mounted to a heatsink or copper plane - for instance, pairing with a 5°C/W heatsink yields a total R_θJA of ~20°C/W, allowing sustained 3 A operation at 100°C ambient without exceeding 150°C junction temperature.

What packaging options are available for the 1N5406GH?

The 1N5406GH is supplied in DO-201AD package with two standard packing formats: 1,250 units per tape-and-reel (ordering code 1N5406GH) and 500 units per ammo box (ordering code 1N5406GHA0G). Both options retain the same AEC-Q101 qualification, glass passivation, and electrical specs - the choice depends on SMT line requirements or manual prototyping needs for the 1N5406GH.