Diodes Incorporated 1N5407G-T

Overview

1N5407G-T from Diodes Incorporated is a glass passivated silicon rectifier diode rated for 800 V peak repetitive reverse voltage, 3.0 A average forward current at 55°C, and 125 A non-repetitive surge current. It features low 1.1 V forward voltage drop at 3.0 A and 2.0 μs typical reverse recovery time, used in AC/DC power supplies, battery chargers, and industrial DC power conversion.

For engineers reviewing the 1N5407G-T datasheet, 1N5407G-T pinout, 1N5407G-T application, or 1N5407G-T equivalent, key selection criteria include its DO-201AD package thermal resistance (16 °C/W), 5.0 μA max reverse leakage at 25°C, RoHS-compliant matte tin plating, and derating behavior above 55°C ambient per Figure 1.

Technical Context

This device operates as a single-phase, half-wave rectifier under 60 Hz resistive or inductive loads. Its glass passivated die construction ensures stable junction performance and enhanced moisture resistance versus epoxy-passivated alternatives.

Rated for -65°C to +150°C operating range, it exhibits 40 pF typical junction capacitance at 1 MHz and 4.0 V reverse bias, with thermal derating required beyond 55°C ambient - maintaining 3.0 A IO only when leads are held at ambient temperature at 9.5 mm from case.

Key Specifications

Pinout & Package

Package: DO-201AD molded plastic case (UL 94V-0), cathode indicated by band, matte tin-plated leads, 1.12 g weight.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar rectifier diode applications.

Compared with 1N5407G-T, 1N5407RLG offers identical performance in a different tape format, while RS1M trades higher forward voltage for faster recovery - making it suitable for higher-switching-frequency applications where 1N5407G-T's 2.0 μs trr may cause excessive loss.

Availability

1N5407G-T is available at Aetrix Electronics and suitable for AC/DC power supplies, battery chargers, and industrial DC power conversion requiring stable component supply and RoHS-compliant manufacturing.

Supply support for 1N5407G-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The 1N540xG series belongs to Diodes' general-purpose rectifier product line, engineered for cost-effective, high-reliability AC/DC conversion in consumer, industrial, and computing power applications.

FAQ

What is the maximum allowable ambient temperature for continuous 3.0 A operation?

The 1N5407G-T sustains 3.0 A average forward current only up to 55°C ambient temperature. Above this, current must be derated per Figure 1 - e.g., to ~2.2 A at 80°C - with strict adherence to 9.5 mm lead length from case to maintain thermal resistance.

Can 1N5407G-T replace 1N5408G in a 1000 V blocking application?

No. The 1N5407G-T has 800 V VRRM, while 1N5408G is rated for 1000 V. Substituting into a 1000 V application risks premature breakdown during transients or line surges, violating design margin requirements.

Is the DO-201AD package compatible with wave soldering processes?

Yes. The DO-201AD package uses matte tin-plated leads compliant with MIL-STD-202 Method 208, supporting both wave and reflow soldering. Moisture sensitivity is Level 1 per J-STD-020, eliminating bake requirements prior to assembly.

Does 1N5407G-T require heatsinking in typical 3 A applications?

Heatsinking is not required for short-duration or intermittent 3 A loads at room temperature. However, sustained 3 A operation above 55°C ambient demands PCB copper area or external heatsinking to manage 3.3 W dissipation and maintain junction temperature below 150°C.