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Microchip Technology 1N5711UBCA/TR
- Part No.:
- 1N5711UBCA/TR
- Manufacturer:
- Microchip Technology
- Category:
- Diode Arrays
- Package:
- 3-SMD, No Lead
- Datasheet:
-
1N5711UBCA/TR.pdf
- Description:
- DIODE ARRAY SCHOTTKY 50V 33MA UB
- Quantity:
- Payment:
- Shipping:
Inventory:100
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Product details
Overview
1N5711UBCA/TR from Microsemi is a ceramic-surface-mount Schottky barrier diode with unidirectional polarity (CA = Common Anode), 70 V breakdown voltage, 1.0 V forward voltage at 15 mA, and 50 V working peak reverse voltage - used in high-reliability RF detector, sample-and-hold, and clamping circuits in military-grade avionics and space-qualified instrumentation.
For engineers reviewing the 1N5711UBCA/TR datasheet, 1N5711UBCA/TR pinout, 1N5711UBCA/TR application, or 1N5711UBCA/TR equivalent, key selection criteria include low reverse leakage (200 nA @ 50 V), fast switching (100 ps minority carrier lifetime), RoHS-compliant ceramic packaging, and MIL-PRF-19500/444 qualification for JANTXV-level reliability assurance.
Technical Context
This Schottky diode operates via majority-carrier conduction, eliminating minority-carrier storage delay and enabling nanosecond-scale switching. Its ceramic hermetic package ensures stable electrical performance across -65 °C to +150 °C junction temperature range and supports reflow soldering up to 260 °C for 10 seconds.
The 1N5711UBCA/TR implements a common-anode dual-die configuration within a single DO-213AA outline, delivering matched forward characteristics between anodes and shared cathode - critical for balanced RF signal detection and precision voltage clamping in high-frequency analog front-ends.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage V(BR) | 70 V minimum at 10 µA - defines maximum non-destructive reverse bias before avalanche onset in clamping or protection roles. |
| Forward Voltage VF | 1.0 V max at IF = 15 mA - enables low-loss rectification and minimal signal distortion in RF detector applications. |
| Working Peak Reverse Voltage VRWM | 50 V - sets safe continuous reverse-bias operating limit for AC-coupled signal paths without leakage-induced offset drift. |
| Reverse Leakage IR | 200 nA max at VR = 50 V - ensures negligible DC error in precision sample-and-hold and low-current bias networks. |
| Junction Temp Range | -65 °C to +150 °C - supports operation in extended-environment systems including satellite power telemetry and missile guidance electronics. |
| Thermal Resistance RθJSP | 100 °C/W - quantifies thermal path efficiency from die to solder pad, informing derating curves for sustained 33 mA average current. |
Pinout & Package
Package: DO-213AA (ceramic surface-mount, gold-plated nickel terminals, ~0.04 g mass, dimensions per Microsemi T4-LDS-0040-2 Rev. 1).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode 1 (Pad 1) | Input anode terminal | Primary RF signal input node in detector or clamp configurations; electrically isolated from lid and shielding. |
| Anode 2 (Pad 2) | Secondary anode terminal | Enables dual-input or differential sensing; matched VF and trr to Anode 1 for balanced operation. |
| Cathode (Pad 3) | Common output terminal | Shared cathode connection for both diodes; serves as reference return path in common-anode topology. |
| Shield / Lid (Pad 4) | Electromagnetic shield | Connected to metal lid; must be grounded to suppress RF interference and stabilize high-frequency impedance. |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/444 Qualified | JANTXV-level screening applied - includes burn-in, temperature cycling, and hermeticity testing for mission-critical aerospace use. |
| Low-Profile Ceramic Encapsulation | 0.046–0.056 inch height - enables compact layout in constrained RF modules while maintaining hermetic moisture resistance. |
| 100 ps Minority Carrier Lifetime | Enables sub-nanosecond reverse recovery - essential for >1 GHz sampling gates and broadband mixer LO injection. |
| RoHS Compliant by Design | No lead, cadmium, or hexavalent chromium - meets EU Directive 2011/65/EU without post-process modification. |
Applications
| Radar Pulse Detection | Avionics Signal Clamping |
|---|---|
Use Scenario: Detecting short-duration RF pulses in X-band airborne radar receivers under wide temperature excursions. IC Role / Device Role / Timing Role: Schottky detector diode converting RF envelope to baseband DC pulse for timing trigger generation. Use Value: 200 nA reverse leakage prevents false triggering during low-amplitude pulse intervals; 100 ps τ ensures fidelity up to 3 GHz. | Use Scenario: Clamping analog sensor outputs in flight control computers to prevent ADC saturation during transient overvoltage events. IC Role / Device Role / Timing Role: Common-anode dual-diode providing symmetrical positive/negative rail clamping with matched VF. Use Value: Matched anode characteristics ensure equal clamping thresholds; ceramic package withstands -55 °C to +125 °C operational extremes. |
| Satellite Telemetry Demodulation | Secure Crypto Module Biasing |
Use Scenario: Demodulating PSK-modulated telemetry signals in LEO satellite transponders with minimal phase distortion. IC Role / Device Role / Timing Role: Low-capacitance (2.0 pF) Schottky diode in passive mixer core for I/Q downconversion. Use Value: 2.0 pF capacitance at 0 V minimizes LO-to-RF feedthrough; 70 V V(BR) accommodates supply margin in 28 V bus systems. | Use Scenario: Providing ultra-stable bias current sources for true random number generator (TRNG) analog entropy circuits in FIPS 140-2 Level 3 hardware security modules. IC Role / Device Role / Timing Role: Precision current source element leveraging low IR drift and tight VF matching across temperature. Use Value: 200 nA IR max at 50 V ensures <1 ppm bias current drift over 10-year mission life; JANTXV screening guarantees zero infant mortality. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ5.0A | TVS diode (not Schottky); 5.0 V standoff, 600 W peak power - no forward conduction capability. | Designed for transient suppression only; unsuitable for RF detection or clamping requiring low VF and matched dual anodes. | Select only if primary need is ESD/EMP protection, not signal conditioning. |
| 1N5711UR-1 | Same die, DO-213AA package, but unidirectional (not CA); single anode, no common-anode topology. | Lacks dual-anode symmetry - cannot replace 1N5711UBCA/TR in balanced detector or differential clamp circuits. | Use where single-diode function suffices and board layout does not require matched pair routing. |
Compared with SMCJ5.0A and 1N5711UR-1, the 1N5711UBCA/TR uniquely delivers common-anode dual-Schottky functionality in a hermetically sealed ceramic package with JANTXV reliability - making it irreplaceable in precision RF and high-integrity analog signal paths.
Availability
1N5711UBCA/TR is available at Aetrix Electronics and suitable for radar pulse detection, avionics signal clamping, satellite telemetry demodulation requiring stable component supply across extended temperature ranges and long-lifecycle programs.
Supply support for 1N5711UBCA/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The 1N5711UBCA/TR belongs to Microsemi's legacy MIL-qualified Schottky diode product line, engineered specifically for RF detection, precision clamping, and high-stability biasing in mission-critical electronic systems.
FAQ
What is the polarity configuration of the 1N5711UBCA/TR?
The "CA" suffix in 1N5711UBCA/TR explicitly denotes Common Anode construction: two anode terminals share one cathode terminal. This configuration enables balanced signal processing in RF detectors and differential clamps. The 1N5711UBCA/TR is not unidirectional or doubler - its CA topology is fixed and verified per Microsemi T4-LDS-0040-2 Rev. 1.
Does the 1N5711UBCA/TR meet MIL-PRF-19500/444 requirements?
Yes, the 1N5711UBCA/TR is qualified to MIL-PRF-19500/444 at JANTXV level, including full screening per Method 5005 - burn-in, temperature cycling, and hermeticity testing. This qualification is documented in the official Microsemi specification T4-LDS-0040-2 Rev. 1 and applies specifically to the UBCA/TR variant.
What is the maximum average forward current rating for the 1N5711UBCA/TR?
The 1N5711UBCA/TR has a rated average rectified output current (IO) of 33 mA at 25 °C ambient, derating linearly to zero at +150 °C junction temperature when TEC and TSP are held at +140 °C. This value is specified in Table "Maximum Ratings" on page 1 of Microsemi T4-LDS-0040-2 Rev. 1.
Is the 1N5711UBCA/TR RoHS compliant?
Yes, the 1N5711UBCA/TR is RoHS compliant by design, containing no lead, cadmium, mercury, hexavalent chromium, PBB, or PBDE above threshold limits. This compliance is stated in the "Features" section of Microsemi T4-LDS-0040-2 Rev. 1 and confirmed through material declarations.
What package type does the 1N5711UBCA/TR use?
The 1N5711UBCA/TR uses the DO-213AA ceramic surface-mount package - a hermetically sealed, low-profile outline with gold-plated nickel terminals. Dimensions and mechanical details are fully specified in the "Package Dimensions" section (page 7) of Microsemi T4-LDS-0040-2 Rev. 1.
1N5711UBCA/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- 3-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Anode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io) (per Diode):
- 33mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 15 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 200 nA @ 50 V
- Operating Temperature - Junction:
- -65°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- UB
1N5711UBCA/TR FAQ
1.How can I place an order for 1N5711UBCA/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5711UBCA/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5711UBCA/TR reliable?
The price and inventory of 1N5711UBCA/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5711UBCA/TR is usually 5 days.
3.What payment methods are accepted for 1N5711UBCA/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5711UBCA/TR transactions.
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4.How is shipping managed for 1N5711UBCA/TR?
1N5711UBCA/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5711UBCA/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5711UBCA/TR?
For technical support, including 1N5711UBCA/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5711UBCA/TR requirements.
6.How does Aetrix verify that 1N5711UBCA/TR is sourced from the original manufacturer or authorized distributors?
All 1N5711UBCA/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5711UBCA/TR meets industry standards.
7.What is the process for return or replacement of 1N5711UBCA/TR?
All 1N5711UBCA/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N5711UBCA/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5711UBCA/TR part is unused and in its original packaging.
Return procedure for 1N5711UBCA/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N5711UBCA/TR Tags
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