My Inquiry
My Account
Microchip Technology 1N5711UBD/TR
- Part No.:
- 1N5711UBD/TR
- Manufacturer:
- Microchip Technology
- Category:
- Diode Arrays
- Package:
- 3-SMD, No Lead
- Datasheet:
-
1N5711UBD/TR.pdf
- Description:
- DIODE ARRAY SCHOTTKY 50V 33MA UB
- Quantity:
- Payment:
- Shipping:
Inventory:73
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N5711UBD/TR from Microsemi is a ceramic-surface-mount Schottky barrier diode qualified to MIL-PRF-19500/444 at JAN/JANTXV levels, with 70 V breakdown voltage, 50 V working peak reverse voltage, and 200 nA max reverse leakage at 50 V, used in high-reliability RF detector and sample-and-hold circuits.
For engineers reviewing the 1N5711UBD/TR datasheet, 1N5711UBD/TR pinout, 1N5711UBD/TR application, or 1N5711UBD/TR equivalent, key selection criteria include military-grade temperature range (–65°C to +150°C), low-profile ceramic package, sub-1 V forward drop at 15 mA, and ESD sensitivity Class 1 handling requirements.
Technical Context
This device implements a unidirectional Schottky junction optimized for low-noise, high-speed switching in signal demodulation and clamping. Its 100 ps minority carrier lifetime and 2.0 pF capacitance at 0 V enable operation up to UHF frequencies without significant phase distortion.
Thermal resistance of 100°C/W from junction to solder pad supports stable performance under pulsed current conditions in compact layouts. The gold-plated nickel terminals ensure reliable interconnect integrity across thermal cycling in aerospace and defense systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage V(BR) | 70 V @ 10 µA - defines absolute maximum reverse blocking capability before avalanche conduction |
| Working Peak Reverse Voltage VRWM | 50 V - maximum continuous reverse voltage usable in rectifier or clamp applications |
| Forward Voltage VF | 1.0 V @ 15 mA - ensures low power loss and minimal signal distortion in detector circuits |
| Reverse Leakage IR | 200 nA @ 50 V - enables high-impedance sampling with minimal DC error in precision hold circuits |
| Junction Temperature Range | –65°C to +150°C - supports operation in extended-environment avionics and space-qualified electronics |
| Capacitance CT | 2.0 pF @ 0 V, 1 MHz - limits high-frequency loading in RF envelope detection paths |
| Average Rectified Current IO | 33 mA - sets maximum continuous forward conduction limit for signal-level rectification |
Pinout & Package
Ceramic surface-mount UB package with two-terminal configuration: base-mounted metallized pads for anode and cathode connection. Dimensions: 0.115" × 0.085" × 0.046" (2.92 mm × 2.16 mm × 1.17 mm); weight ≈ 0.04 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pad 1 | Anode | Primary forward current entry point; connected to internal Schottky junction anode region |
| Pad 2 | Cathode | Forward current exit and reverse voltage reference terminal; metallized base pad |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/444 qualification | JAN and JANTXV screening levels confirmed - meets burn-in, temperature cycling, and hermeticity requirements for flight-critical hardware |
| Low reverse leakage | 200 nA @ 50 V - preserves signal integrity in high-Z sample-and-hold nodes and RF detector outputs |
| Ceramic surface-mount construction | Hermetic, low-outgassing package - eliminates moisture-induced parameter shift in vacuum or sealed environments |
| ESD sensitivity Class 1 | ≤250 V HBM - mandates strict handling protocols during board assembly to prevent junction damage |
Applications
| RF Detector Circuit | Sample-and-Hold Amplifier |
|---|---|
Use Scenario: Demodulating AM signals in L-band radar receivers where minimal forward voltage drop preserves weak-signal fidelity. IC Role / Device Role / Timing Role: Signal-path Schottky detector diode performing envelope extraction with sub-ns recovery. Use Value: 1.0 V VF at 15 mA and 2.0 pF capacitance minimize amplitude error and frequency roll-off above 1 GHz. |
Use Scenario: Holding analog voltage samples in precision ADC front-ends for telemetry systems operating across –55°C to +125°C. IC Role / Device Role / Timing Role: Low-leakage hold switch isolating capacitor from input source during acquisition phase. Use Value: 200 nA IR at 50 V prevents >1 LSB drift over 10 ms hold time in 16-bit systems. |
| High-Reliability Clamping | Military Power Supply Protection |
Use Scenario: Protecting op-amp inputs against transient overvoltage in airborne navigation computers. IC Role / Device Role / Timing Role: Fast-turn-on clamp limiting input swing to ±0.4 V beyond rail using Schottky forward conduction. Use Value: 100 ps minority carrier lifetime ensures response within 2 ns to 100 V/µs transients. |
Use Scenario: Reverse-polarity protection in 28 V DC distribution modules for tactical radios. IC Role / Device Role / Timing Role: Series-connected Schottky blocking diode preventing battery-backfeed during hot-swap events. Use Value: 70 V V(BR) and –65°C to +150°C rating support survivability in shock/vibe and thermal soak environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5711UR-1 | Same electrical specs but DO-213AA plastic package; no MIL qualification | Lacks hermeticity and temperature range - unsuitable for vacuum or extended-temp military use | Select only for commercial-grade cost-sensitive designs where MIL screening is not required |
| SMCJ5.0A | TVS diode with 5.0 V standoff; not a Schottky rectifier - different function and failure mode | Used for surge suppression, not signal detection or clamping - incompatible circuit role | Not interchangeable; choose only if transient protection-not low-VF rectification-is the design goal |
Compared with 1N5711UBD/TR, 1N5711UR-1 offers identical electrical behavior but lacks military reliability validation and hermetic packaging, while SMCJ5.0A serves a fundamentally different protection function and cannot replace the Schottky's signal-path role.
Availability
1N5711UBD/TR is available at Aetrix Electronics and suitable for RF detector circuits, sample-and-hold amplifiers, and high-reliability clamping applications requiring stable component supply across extended temperature and radiation-tolerant environments.
Supply support for 1N5711UBD/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The 1N5711UBD/TR belongs to Microsemi's legacy MIL-qualified Schottky diode product line, engineered specifically for signal integrity preservation in RF, timing, and power control subsystems where hermeticity and extended temperature stability are mandatory.
FAQ
What is the maximum average forward current rating for 1N5711UBD/TR?
The 1N5711UBD/TR has a maximum average rectified output current (IO) of 33 mA at 25°C. Derating applies above +140°C ambient: IO decreases linearly to zero at +150°C. This rating assumes full-wave 50/60 Hz sine-wave input with 180° conduction angle and proper thermal management via the solder pad.
Is 1N5711UBD/TR RoHS compliant?
Yes, the 1N5711UBD/TR is RoHS compliant by design per the manufacturer's documentation. It contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE), meeting EU Directive 2011/65/EU requirements for hazardous substances.
What does the "UB" suffix indicate in 1N5711UBD/TR?
The "UB" suffix denotes the ceramic surface-mount package variant qualified to MIL-PRF-19500/444. It distinguishes this version from axial DO-35 ("1N5711-1") and plastic surface-mount DO-213AA ("1N5711UR-1") variants. The "D" indicates tape-and-reel packaging per EIA-418D standards.
Can 1N5711UBD/TR be used as a direct replacement for 1N5711-1 in existing designs?
No - 1N5711UBD/TR uses a ceramic surface-mount UB package, while 1N5711-1 is axial-leaded DO-35. Physical form factor, thermal path, and PCB layout are incompatible. Electrical parameters match, but mechanical integration requires redesign. Use only when migrating to surface-mount assembly with verified thermal and mechanical validation.
What is the reverse recovery time (trr) specification for 1N5711UBD/TR?
The 1N5711UBD/TR does not specify trr in its datasheet because Schottky diodes are majority-carrier devices with no minority-carrier storage delay. Instead, its effective switching speed is characterized by a 100 ps minority carrier lifetime (τ), enabling nanosecond-scale turn-off behavior suitable for RF and high-speed digital clamping applications.
1N5711UBD/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- 3-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Series Connection
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io) (per Diode):
- 33mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 15 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 200 nA @ 50 V
- Operating Temperature - Junction:
- -65°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- UB
1N5711UBD/TR FAQ
1.How can I place an order for 1N5711UBD/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5711UBD/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5711UBD/TR reliable?
The price and inventory of 1N5711UBD/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5711UBD/TR is usually 5 days.
3.What payment methods are accepted for 1N5711UBD/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5711UBD/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5711UBD/TR?
1N5711UBD/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5711UBD/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5711UBD/TR?
For technical support, including 1N5711UBD/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5711UBD/TR requirements.
6.How does Aetrix verify that 1N5711UBD/TR is sourced from the original manufacturer or authorized distributors?
All 1N5711UBD/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5711UBD/TR meets industry standards.
7.What is the process for return or replacement of 1N5711UBD/TR?
All 1N5711UBD/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N5711UBD/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5711UBD/TR part is unused and in its original packaging.
Return procedure for 1N5711UBD/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N5711UBD/TR Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
