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Microchip Technology 1N5711UB/TR
- Part No.:
- 1N5711UB/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- 3-SMD, No Lead
- Datasheet:
-
1N5711UB/TR.pdf
- Description:
- SMALL-SIGNAL SCHOTTKY
- Quantity:
- Payment:
- Shipping:
Inventory:74
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Product details
Overview
1N5711UB/TR from Microsemi is a ceramic-surface-mount Schottky barrier diode qualified to MIL-PRF-19500/444 at JAN/JANTXV levels, with 70 V breakdown voltage, 1.0 V forward voltage at 15 mA, and 200 nA reverse leakage at 50 V reverse voltage, used in high-reliability RF detector and sample-and-hold circuits.
For engineers reviewing the 1N5711UB/TR datasheet, 1N5711UB/TR pinout, 1N5711UB/TR application, or 1N5711UB/TR equivalent, this page delivers verified military-grade Schottky parameters, ceramic package dimensions, unidirectional polarity confirmation, thermal resistance (100 °C/W), and ESD sensitivity class (Class 1).
Technical Context
This Schottky diode operates as a unidirectional rectifier with zero minority-carrier storage, enabling sub-nanosecond switching via 100 ps effective carrier lifetime. Its low forward voltage (0.41 V @ 1 mA) and minimal junction capacitance (2.0 pF @ 0 V) support high-frequency signal demodulation up to UHF bands.
The ceramic DO-213AA package provides hermetic sealing and gold-plated terminals for stable performance across -65 °C to +150 °C ambient, with thermal resistance of 100 °C/W from junction to solder pad-critical for sustained operation in sealed military enclosures.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage V(BR) | 70 V minimum at 10 µA - ensures reliable blocking in 48 V and 50 V peak reverse applications without avalanche conduction. |
| Forward Voltage VF | 1.0 V max at 15 mA - enables low-loss signal detection in battery-powered RF receivers with minimal voltage drop. |
| Reverse Leakage IR | 200 nA max at 50 V - preserves signal integrity in precision sample-and-hold and peak-detector circuits over temperature. |
| Junction Temperature Range | -65 °C to +150 °C - supports operation in aerospace avionics, missile guidance, and downhole oilfield electronics. |
| Thermal Resistance RθJSP | 100 °C/W - defines derating slope: average current drops to zero between +140 °C and +150 °C ambient. |
| Junction Capacitance CT | 2.0 pF at 0 V - maintains >1 GHz small-signal bandwidth in mixer and detector stages without parasitic loading. |
Pinout & Package
Ceramic DO-213AA surface-mount package with two-terminal configuration: anode and cathode on opposite ends of a rectangular ceramic body (0.115–0.128 in length × 0.085–0.108 in width × 0.046–0.056 in height), gold-plated nickel terminals, and laser-marked part number/date code.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Pad 1) | Forward current entry point | Connected to positive supply or RF input in detector configurations; requires low-inductance trace routing. |
| Cathode (Pad 2) | Forward current exit / reverse voltage reference | Bonded to ground plane or bias network; serves as return path in series-connected sampling circuits. |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/444 qualification | Qualified to JAN and JANTXV reliability levels-ensures lot traceability, burn-in, and radiation tolerance for defense programs. |
| Low-profile ceramic case | 0.056 in max height-enables integration into space-constrained RF modules and phased-array antenna front-ends. |
| ESD sensitivity Class 1 | Handling requires grounded workstations and ionized air-prevents gate oxide damage during manual assembly or rework. |
| Surface-mount equivalence to JEDEC 1N5711 | Direct replacement for legacy through-hole 1N5711-1 in automated SMT lines without redesigning footprint or stencil. |
Applications
| Radar Pulse Detection | RF Signal Sampling |
|---|---|
Use Scenario: Detecting short-duration microwave pulses in airborne fire-control radar receivers. IC Role / Device Role / Timing Role: Unidirectional Schottky detector diode converting RF envelope to baseband DC pulse. Use Value: 70 V V(BR) withstands pulse overshoot; 200 nA IR prevents false triggering during low-duty-cycle operation. |
Use Scenario: Capturing instantaneous amplitude of L-band satellite signals in telemetry downlink receivers. IC Role / Device Role / Timing Role: Sample-and-hold front-end diode charging hold capacitor with minimal droop. Use Value: 2.0 pF CT minimizes capacitive feedthrough; 100 ps τ ensures <1 ns recovery for 100 MHz sampling rates. |
| Military Communication Modems | Downhole Instrumentation |
Use Scenario: Demodulating AM/ASK waveforms in secure HF/VHF tactical radios operating in extreme environments. IC Role / Device Role / Timing Role: Envelope detector in analog IF stage prior to A/D conversion. Use Value: -65 °C to +150 °C rating allows uninterrupted operation in desert or arctic field deployments. |
Use Scenario: Rectifying sensor excitation signals in oil/gas well logging tools exposed to 150 °C borehole temperatures. IC Role / Device Role / Timing Role: High-temp power conditioning diode in isolated DC-DC feedback paths. Use Value: Ceramic hermeticity prevents moisture ingress; 100 °C/W RθJSP enables thermal management without heatsinks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky detector diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5711UR-1 | Same electrical specs, but DO-213AA package with RoHS-compliant matte tin plating instead of gold. | Preferred for commercial or non-military industrial designs where MIL-spec isn't required. | Select 1N5711UR-1 when cost-sensitive volume production excludes military qualification requirements. |
| SM1N5711 | Commercial-grade version with same DO-213AA footprint but only commercial-level screening (no JAN/JANTXV). | Suitable for test equipment and lab prototypes where full MIL-PRF-19500/444 traceability is unnecessary. | Choose SM1N5711 for bench validation before committing to qualified 1N5711UB/TR in flight hardware. |
Compared with 1N5711UR-1 and SM1N5711, the 1N5711UB/TR delivers guaranteed military screening, gold metallization for long-term bond reliability, and full lot-level documentation-making it the sole option for deployed defense systems requiring DoD-STD-2164 compliance.
Availability
1N5711UB/TR is available at Aetrix Electronics and suitable for radar pulse detection, RF signal sampling, military communication modems, and downhole instrumentation requiring stable component supply under extended temperature and reliability constraints.
Supply support for 1N5711UB/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The 1N5711UB/TR belongs to Microsemi's legacy MIL-qualified Schottky diode family, engineered specifically for RF detection and high-temperature rectification in mission-critical systems where failure is not an option.
FAQ
What is the polarity configuration of the 1N5711UB/TR?
The 1N5711UB/TR is a unidirectional Schottky diode with discrete anode and cathode terminals-no common-anode, common-cathode, or doubler variants. This is confirmed by its designation lacking CA, CC, or D suffixes in the part nomenclature table and consistent with its use in single-path RF detection circuits.
Is the 1N5711UB/TR RoHS compliant?
Yes, the 1N5711UB/TR is RoHS compliant by design per the manufacturer's documentation. Its ceramic package, gold-plated nickel terminals, and absence of lead, cadmium, or hexavalent chromium meet EU Directive 2011/65/EU requirements without exemption waivers.
What does "UB" signify in the 1N5711UB/TR part number?
In the 1N5711UB/TR, "UB" denotes the ceramic surface-mount DO-213AA package variant per Microsemi's nomenclature system. It distinguishes this version from axial-leaded (1N5711-1) and other surface-mount (1N5711UR-1) variants, and confirms military qualification eligibility.
Can the 1N5711UB/TR replace the through-hole 1N5711-1 in existing designs?
The 1N5711UB/TR is the surface-mount equivalent of the JEDEC 1N5711, but direct replacement requires PCB footprint revision: DO-213AA (0.128 in × 0.108 in) differs mechanically from DO-35 (0.145 in × 0.075 in). Electrical behavior is identical, but layout adaptation is mandatory.
What is the maximum average rectified output current for the 1N5711UB/TR?
The 1N5711UB/TR has a maximum average rectified output current (IO) of 33 mA at 25 °C ambient. At elevated temperatures, this derates linearly to zero at +150 °C, with full-rated current limited to +140 °C per the datasheet's thermal derating note.
1N5711UB/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- 3-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io):
- 33mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 15 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 200 nA @ 50 V
- Capacitance @ Vr, F:
- 2pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- UB
- Operating Temperature - Junction:
- -65°C ~ 150°C
1N5711UB/TR FAQ
1.How can I place an order for 1N5711UB/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5711UB/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5711UB/TR reliable?
The price and inventory of 1N5711UB/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5711UB/TR is usually 5 days.
3.What payment methods are accepted for 1N5711UB/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5711UB/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5711UB/TR?
1N5711UB/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5711UB/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5711UB/TR?
For technical support, including 1N5711UB/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5711UB/TR requirements.
6.How does Aetrix verify that 1N5711UB/TR is sourced from the original manufacturer or authorized distributors?
All 1N5711UB/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5711UB/TR meets industry standards.
7.What is the process for return or replacement of 1N5711UB/TR?
All 1N5711UB/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N5711UB/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5711UB/TR part is unused and in its original packaging.
Return procedure for 1N5711UB/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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