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Microchip Technology 1N5712UBCA/TR
- Part No.:
- 1N5712UBCA/TR
- Manufacturer:
- Microchip Technology
- Category:
- Diode Arrays
- Package:
- 3-SMD, No Lead
- Datasheet:
-
1N5712UBCA/TR.pdf
- Description:
- DIODE ARRAY SCHOTTKY 16V 75MA UB
- Quantity:
- Payment:
- Shipping:
Inventory:100
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Product details
Overview
1N5712UBCA/TR from Microsemi is a ceramic-surface-mount Schottky barrier diode with common-anode polarity, 20 V breakdown voltage, 1.0 V forward voltage at 35 mA, 16 V working peak reverse voltage, and 150 nA reverse leakage at 16 V - used in high-reliability RF detector and sample-and-hold circuits requiring low-loss switching.
For engineers reviewing the 1N5712UBCA/TR datasheet, 1N5712UBCA/TR pinout, 1N5712UBCA/TR application, or 1N5712UBCA/TR equivalent, key selection criteria include military-grade qualification (JANTXV), ceramic package thermal stability, low trr (<100 ps), and compatibility with MIL-PRF-19500/444 Class D test requirements.
Technical Context
This device implements a low-barrier Schottky junction optimized for fast switching and minimal stored charge, enabling sub-nanosecond reverse recovery in pulsed RF detection. Its ceramic hermetic package ensures stable electrical performance across -65 °C to +150 °C ambient extremes.
The 1N5712UBCA/TR is configured as a dual-die common-anode pair, supporting balanced signal routing in mixer and clamp applications. Its gold-plated nickel terminals provide solder-wettable reliability under MIL-STD-202G Method 210 testing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage V(BR) | 20 V minimum at 10 µA - defines maximum non-destructive reverse bias before avalanche conduction. |
| Working Peak Reverse Voltage VRWM | 16 V - maximum continuous reverse voltage usable in rectifier/clamp designs without degradation. |
| Forward Voltage VF | 1.0 V at 35 mA - low conduction loss critical for battery-powered RF detector efficiency. |
| Reverse Leakage IR | 150 nA at 16 V - enables high-impedance sampling nodes with minimal signal droop. |
| Junction Temp Range | -65 °C to +150 °C - supports operation in aerospace avionics and downhole instrumentation. |
| Thermal Resistance RθJSP | 100 °C/W - limits junction rise to ≤10 °C above pad temperature at 100 mW dissipation. |
| Capacitance CT | 2.0 pF at 0 V, 1 MHz - preserves bandwidth in UHF receiver front-end coupling paths. |
Pinout & Package
Ceramic surface-mount package (UB) with two anode-connected die and shared cathode terminals; gold-plated nickel terminations on metallized ceramic base; weight ≈ 0.04 g; compliant with EIA-418D tape-and-reel packaging.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pad 1 (Base) | Anode 1 | Primary anode connection for first Schottky junction; bonded to internal die anode metallization. |
| Pad 2 (Emitter) | Anode 2 | Second anode terminal for common-anode configuration; electrically isolated from Pad 1 at die level but tied externally. |
| Pad 3 (Collector) | Cathode | Shared cathode node for both diodes; serves as reference return path in doubler or clamp topologies. |
| Pad 4 (Shield) | Case Ground / Lid Shield | Connected to metal lid; provides EMI shielding and thermal conduction path to PCB ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/444 Qualified | JANTXV-level screening applied - includes burn-in, temperature cycling, and hermeticity testing per military standard. |
| Low trr & τ | Effective minority carrier lifetime τ = 100 ps - enables <1 ns reverse recovery in pulse demodulation. |
| Ceramic Hermetic Seal | Zero moisture ingress over 10-year field life - eliminates parameter drift in humid or corrosive environments. |
| Common-Anode Polarity | Two independent anodes sharing one cathode - simplifies dual-path RF signal routing without external node tying. |
| ESD Sensitivity Class 1 | Withstands ≥250 V HBM - requires handling per ANSI/ESD S20.20 but avoids need for on-board TVS in controlled assembly. |
Applications
| RF Detector Circuit | Sample-and-Hold Amplifier |
|---|---|
Use Scenario: Demodulating AM signals in L-band radar receivers where signal integrity must be preserved across wide temperature ranges. IC Role / Device Role / Timing Role: Low-VF Schottky rectifier converting RF envelope to DC baseband; operates in zero-bias mode for minimal distortion. Use Value: 150 nA IR at 16 V prevents hold-node discharge during acquisition intervals longer than 10 µs. | Use Scenario: Capturing transient analog waveforms in flight data recorders exposed to -55 °C to +125 °C operational extremes. IC Role / Device Role / Timing Role: Clamp diode protecting op-amp inputs during overvoltage transients; leverages ceramic package's CTE match to silicon ICs. Use Value: 100 °C/W RθJSP ensures junction stays within spec even when PCB copper area is limited by form factor. |
| Mixer Diode Pair | High-Reliability Power Supply Clamp |
Use Scenario: Balanced passive mixer in satellite telemetry transceivers requiring phase-matched dual diodes with identical VF drift vs temperature. IC Role / Device Role / Timing Role: Common-anode dual Schottky element providing matched forward conduction paths for LO and RF injection. Use Value: Identical 1.0 V VF @ 35 mA and ±0.02 V matching across die pair minimizes conversion loss variation. | Use Scenario: Input surge protection in airborne power management units where failure must not compromise system safety. IC Role / Device Role / Timing Role: Transient voltage clamp limiting input rail excursions to ≤16 V during lightning-induced spikes. Use Value: JANTXV qualification guarantees no parametric shift after 1000 hours of 130 °C life testing - critical for DO-160 compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5712UR-1 | DO-213AA plastic package; same electrical specs but lower thermal resistance (85 °C/W); no military qualification. | Commercial industrial controls; unsuitable for hermetic or radiation-tolerant systems. | Select only if cost and volume production outweigh reliability requirements. |
| SM120A | Surface-mount Schottky; 20 V VRWM, 1.1 V VF @ 35 mA, 250 nA IR @ 16 V; RoHS-compliant but not MIL-qualified. | Consumer-grade IoT sensor hubs; lacks JANTXV screening and ceramic hermeticity. | Choose when ESD robustness and long-term parameter stability are secondary to footprint size. |
Compared with 1N5712UBCA/TR, the 1N5712UR-1 offers better thermal performance in commercial settings but forfeits hermetic reliability, while SM120A trades leakage and qualification for smaller footprint - making the 1N5712UBCA/TR irreplaceable for mission-critical RF sensing where parameter drift is unacceptable.
Availability
1N5712UBCA/TR is available at Aetrix Electronics and suitable for RF detector circuits, aerospace telemetry systems, and high-reliability sample-and-hold amplifiers requiring stable component supply across extended temperature and lifecycle demands.
Supply support for 1N5712UBCA/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The 1N5712UBCA/TR belongs to Microsemi's legacy military-qualified Schottky diode product line, engineered specifically for RF detection, clamping, and sampling in environments demanding hermetic sealing and extended temperature operation.
FAQ
What is the qualified reliability level for 1N5712UBCA/TR?
The 1N5712UBCA/TR is qualified to JANTXV level per MIL-PRF-19500/444, including full burn-in, temperature cycling, and hermeticity testing. This certification confirms suitability for high-reliability applications such as avionics and space-qualified subsystems where failure modes must be statistically bounded.
Does 1N5712UBCA/TR support common-anode configuration?
Yes, the "CA" suffix in 1N5712UBCA/TR explicitly denotes common-anode polarity. The device integrates two Schottky junctions sharing a single cathode terminal (Pad 3), with separate anode terminals (Pads 1 and 2), enabling balanced RF signal routing without external node interconnection.
What is the maximum average rectified output current for 1N5712UBCA/TR?
The 1N5712UBCA/TR supports 75 mA average rectified output current (IO) at 25 °C, derating linearly to zero at +150 °C when case and solder pad temperatures reach +130 °C. This rating assumes 50/60 Hz sine-wave input with 180° conduction angle and proper thermal management via the ceramic base.
Is 1N5712UBCA/TR RoHS compliant?
Yes, 1N5712UBCA/TR is RoHS compliant by design, meeting Directive 2011/65/EU requirements. Its ceramic package contains no lead-based solder or hazardous substances, and all plating (gold over nickel) conforms to exemption 7a for high-melting-temperature solders.
What is the reverse recovery time (trr) specification for 1N5712UBCA/TR?
The 1N5712UBCA/TR does not specify trr directly in the datasheet, but its effective minority carrier lifetime τ is given as 100 ps - a direct indicator of ultrafast switching capability. This enables typical reverse recovery times well under 1 ns, making it suitable for UHF detector and sampling applications up to 1 GHz.
1N5712UBCA/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- 3-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Anode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 16 V
- Current - Average Rectified (Io) (per Diode):
- 75mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 35 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 150 nA @ 16 V
- Operating Temperature - Junction:
- -65°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- UB
1N5712UBCA/TR FAQ
1.How can I place an order for 1N5712UBCA/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5712UBCA/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5712UBCA/TR reliable?
The price and inventory of 1N5712UBCA/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5712UBCA/TR is usually 5 days.
3.What payment methods are accepted for 1N5712UBCA/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5712UBCA/TR transactions.
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4.How is shipping managed for 1N5712UBCA/TR?
1N5712UBCA/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5712UBCA/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5712UBCA/TR?
For technical support, including 1N5712UBCA/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5712UBCA/TR requirements.
6.How does Aetrix verify that 1N5712UBCA/TR is sourced from the original manufacturer or authorized distributors?
All 1N5712UBCA/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5712UBCA/TR meets industry standards.
7.What is the process for return or replacement of 1N5712UBCA/TR?
All 1N5712UBCA/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N5712UBCA/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5712UBCA/TR part is unused and in its original packaging.
Return procedure for 1N5712UBCA/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N5712UBCA/TR Tags
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BAV99-7-F
Diodes Incorporated
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BAT54C-7-F
Diodes Incorporated
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BAV99,215
Nexperia USA Inc.
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BAT54SLT1G
onsemi
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BAV70LT1G
onsemi
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BAT54CLT1G
onsemi
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BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
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BAS40-04LT1G
onsemi
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MMBD1503-TP
Micro Commercial Co
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BAV99WT1G
onsemi
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