My Inquiry
My Account
Microchip Technology 1N5712UBD/TR
- Part No.:
- 1N5712UBD/TR
- Manufacturer:
- Microchip Technology
- Category:
- Diode Arrays
- Package:
- 3-SMD, No Lead
- Datasheet:
-
1N5712UBD/TR.pdf
- Description:
- DIODE ARRAY SCHOTTKY 16V 75MA UB
- Quantity:
- Payment:
- Shipping:
Inventory:64
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N5712UBD/TR from Microsemi is a ceramic-surface-mount Schottky barrier diode with 20 V minimum breakdown voltage, 1.0 V maximum forward voltage at 35 mA, 16 V working peak reverse voltage, 150 nA maximum reverse leakage at 16 V, and 2.0 pF capacitance at 0 V - used in high-reliability RF detector and low-leakage sample-and-hold circuits.
For engineers reviewing the 1N5712UBD/TR datasheet, 1N5712UBD/TR pinout, 1N5712UBD/TR application, or 1N5712UBD/TR equivalent, key selection criteria include military-grade qualification (JANTXV), ceramic package thermal resistance of 100 °C/W, ESD sensitivity Class 1 handling, and unidirectional polarity per part nomenclature "D" suffix.
Technical Context
This Schottky diode operates as a unidirectional rectifier with no minority-carrier storage, enabling nanosecond-scale switching. Its 100 ps effective minority carrier lifetime and low dynamic resistance support high-frequency detection up to UHF bands.
The device is qualified per MIL-PRF-19500/444 at JANTXV level, features gold-plated terminals over nickel underplate, and uses a hermetically sealed ceramic case rated for -65 °C to +150 °C junction temperature operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage | 20 V min - ensures safe operation below 20 V reverse bias before avalanche onset |
| Forward Voltage | 1.0 V max at 35 mA - enables low-loss signal rectification in battery-powered RF detectors |
| Working Peak Reverse Voltage | 16 V - defines maximum continuous reverse bias in clamping or demodulation circuits |
| Reverse Leakage Current | 150 nA max at 16 V - critical for precision sample-and-hold and low-power sensor front-ends |
| Capacitance | 2.0 pF at 0 V - supports >1 GHz small-signal impedance matching in microwave detector designs |
| Junction Temp Range | -65 °C to +150 °C - validated for aerospace, downhole, and defense electronics environments |
| Thermal Resistance | 100 °C/W junction-to-solder pad - informs heatsinking requirements for sustained 75 mA average current |
Pinout & Package
Ceramic surface-mount package (UB) with two terminals: Pad 1 (anode), Pad 2 (cathode). Hermetic ceramic case, gold-plated Ni underplate terminals, marked with part number and date code. Weight ≈ 0.04 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pad 1 | Anode | Forward current entry point; connects to RF input or signal source in detector applications |
| Pad 2 | Cathode | Forward current exit and reference node; ties to ground or bias network in sampling circuits |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/444 JANTXV qualification | Validated reliability for mission-critical systems requiring zero-failure probability over extended life |
| 100 ps minority carrier lifetime | Enables sub-nanosecond reverse recovery - essential for UHF and L-band RF envelope detection |
| Ceramic hermetic encapsulation | Prevents moisture ingress and parametric drift in high-humidity or vacuum environments |
| Low-profile surface-mount geometry | Reduces parasitic inductance and improves impedance control in microstrip-based detector layouts |
Applications
| RF Detector Circuit | Low-Power Sensor Interface |
|---|---|
Use Scenario: Demodulating AM signals in satellite telemetry receivers operating at 1–2 GHz. IC Role / Device Role / Timing Role: Unidirectional Schottky rectifier converting RF envelope to baseband DC voltage. Use Value: 150 nA reverse leakage preserves signal integrity; 2.0 pF capacitance minimizes detuning of microstrip matching networks. | Use Scenario: Sampling analog sensor outputs in radiation-hardened environmental monitors. IC Role / Device Role / Timing Role: Precision clamp and hold element in ultra-low-quiescent-current acquisition stages. Use Value: -65 °C to +150 °C operation ensures functionality across orbital thermal cycles; ceramic seal prevents long-term parameter shift. |
| High-Reliability Power Supply Clamp | Aerospace Signal Conditioning |
Use Scenario: Transient suppression on 12 V avionics bus lines subject to load dump spikes. IC Role / Device Role / Timing Role: Fast-recovery clamp diode limiting voltage excursions during switching events. Use Value: 100 ps carrier lifetime enables response within first 5 ns of transient edge; JANTXV screening guarantees lot traceability. | Use Scenario: Input protection and signal routing in phased-array radar front-end modules. IC Role / Device Role / Timing Role: Bidirectional ESD shunt and RF isolation element between LNA and mixer stages. Use Value: Gold-plated terminals ensure stable contact resistance after 1000+ thermal cycles; 100 °C/W RθJSP allows direct PCB copper pour cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5712UR-1 | DO-213AA plastic package; same electrical specs but non-hermetic; RoHS-compliant only | Limited to commercial-grade industrial use; not qualified to MIL-PRF-19500/444 | Select when cost and volume production outweigh military reliability requirements |
| SMCJ20A | TVS diode with 20 V standoff; 600 W peak pulse power; bidirectional; 1.5 µA leakage | Designed for surge suppression, not signal detection; higher capacitance (150 pF) | Choose only for overvoltage protection - not a functional replacement for 1N5712UBD/TR in RF detection |
Compared with 1N5712UBD/TR, 1N5712UR-1 offers identical electrical performance in a lower-cost plastic SMT package but lacks hermeticity and military screening; SMCJ20A serves a fundamentally different circuit role (transient suppression vs. signal rectification) and cannot substitute in detector or sampling applications.
Availability
1N5712UBD/TR is available at Aetrix Electronics and suitable for RF detector circuits, aerospace sensor interfaces, and high-reliability power supply clamps requiring stable component supply across extended product lifecycles.
Supply support for 1N5712UBD/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The 1N5712UBD/TR belongs to Microsemi's legacy military-qualified Schottky diode product line, engineered specifically for RF detection, precision clamping, and low-leakage signal conditioning in extreme-environment electronics.
FAQ
What is the polarity configuration of the 1N5712UBD/TR?
The "D" suffix in 1N5712UBD/TR denotes unidirectional polarity - anode and cathode terminals are isolated, not common-anode or common-cathode. This matches JEDEC-standard 1N5712 behavior and supports standard series-connected rectifier layouts without internal node sharing.
Is the 1N5712UBD/TR RoHS compliant?
Yes, the 1N5712UBD/TR is RoHS compliant by design per the manufacturer's documentation. Its ceramic package, gold-plated nickel terminals, and lead-free assembly process meet EU Directive 2011/65/EU requirements without exemptions.
What does the "UB" package designation mean for the 1N5712UBD/TR?
The "UB" in 1N5712UBD/TR identifies Microsemi's proprietary ceramic surface-mount package - distinct from DO-213AA or DO-35 variants. It features a hermetically sealed ceramic body, gold-plated terminals, and dimensions conforming to MIL-PRF-19500/444 mechanical drawings.
Can the 1N5712UBD/TR replace the 1N5712-1 axial-leaded version in new designs?
No - while electrically equivalent, the 1N5712UBD/TR uses a surface-mount ceramic package versus the through-hole DO-35 package of 1N5712-1. PCB layout, thermal management, and reflow profile must be redesigned; no pin-to-pin compatibility exists between these form factors.
What is the maximum average rectified output current for the 1N5712UBD/TR?
The 1N5712UBD/TR supports 75 mA average rectified output current at 25 °C ambient. Derating applies above 130 °C solder pad temperature, reaching zero current capability at +150 °C per the manufacturer's thermal derating curve.
1N5712UBD/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- 3-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Series Connection
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 16 V
- Current - Average Rectified (Io) (per Diode):
- 75mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 35 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 150 nA @ 16 V
- Operating Temperature - Junction:
- -65°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- UB
1N5712UBD/TR FAQ
1.How can I place an order for 1N5712UBD/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5712UBD/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5712UBD/TR reliable?
The price and inventory of 1N5712UBD/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5712UBD/TR is usually 5 days.
3.What payment methods are accepted for 1N5712UBD/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5712UBD/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5712UBD/TR?
1N5712UBD/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5712UBD/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5712UBD/TR?
For technical support, including 1N5712UBD/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5712UBD/TR requirements.
6.How does Aetrix verify that 1N5712UBD/TR is sourced from the original manufacturer or authorized distributors?
All 1N5712UBD/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5712UBD/TR meets industry standards.
7.What is the process for return or replacement of 1N5712UBD/TR?
All 1N5712UBD/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N5712UBD/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5712UBD/TR part is unused and in its original packaging.
Return procedure for 1N5712UBD/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N5712UBD/TR Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
