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Microchip Technology 1N5802URS/TR
- Part No.:
- 1N5802URS/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N5802URS/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:5,446
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Product details
Overview
1N5802URS/TR from Microsemi is a military-qualified ultrafast recovery glass rectifier diode in URS (one square + one round end cap) hermetic MELF-style package, rated at 2.5 A average forward current (at TEC = 75 °C), 50 V working peak reverse voltage, and 25 ns reverse recovery time. It serves as a high-reliability output rectifier in space-grade DC/DC converters and radiation-hardened power supplies.
For engineers reviewing the 1N5802URS/TR datasheet, 1N5802URS/TR pinout, 1N5802URS/TR application, or 1N5802URS/TR equivalent, this page delivers verified electrical specs, thermal performance data, MIL-PRF-19500/477 qualification status, and direct alternative part comparisons for high-integrity power design.
Technical Context
This device implements a voidless hermetically sealed glass construction with Category 1 metallurgical bonds, enabling operation from −65 °C to +175 °C junction temperature and supporting controlled avalanche capability up to 175 W peak reverse power. Its 13 °C/W junction-to-end-cap thermal resistance and 25 pF capacitance at 10 V/1 MHz support stable switching in high-frequency SMPS topologies.
The 1N5802URS/TR exhibits 0.875 V max forward voltage at 1.0 A (8.3 ms pulse) and 0.975 V at 2.5 A, with leakage current limited to 1 µA at 50 V and 125 °C. Its 35 A non-repetitive surge rating (10× 8.3 ms pulses, 1 min intervals) ensures robustness against line transients in avionics power conditioning.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Peak Reverse Voltage | 50 V - Maximum continuous reverse bias before breakdown under full operating temperature range (−65 °C to +175 °C) |
| Average Forward Current | 2.5 A @ TEC = 75 °C - Sustained DC output current when end-cap temperature is held at 75 °C, derating 50 mA/°C above 125 °C |
| Reverse Recovery Time | 25 ns - Time from forward-to-reverse zero-crossing to 5% of peak reverse recovery current (IF = 0.5 A, IRM = 0.5 A) |
| Forward Voltage | 0.875 V max @ 1.0 A (8.3 ms pulse) - Low conduction loss enabling >92% efficiency in 200–500 kHz flyback converters |
| Junction-to-End-Cap Thermal Resistance | 13 °C/W - Enables direct thermal coupling to heatsink or PCB copper via end-cap mounting, critical for conduction-limited designs |
| Capacitance | 25 pF @ 10 V, 1 MHz - Minimizes high-frequency switching noise coupling in EMI-sensitive RF subsystems |
| Surge Current | 35 A (non-repetitive, 8.3 ms) - Withstands AC line surges and inrush events without degradation in MIL-STD-704-compliant power inputs |
Pinout & Package
Package: URS - Hermetically sealed voidless glass case with one square end cap and one round end cap; cathode indicated by color band; tin/lead or RoHS-compliant matte tin over nickel over copper terminals; weight 193 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to input-side of rectification stage; must be routed with low-inductance path to minimize voltage overshoot during trr |
| Cathode | Forward current exit point | Marked by color band; ties to output filter capacitor and load; end-cap contact enables direct thermal sinking to chassis or copper pour |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination under thermal cycling, ensuring >100,000 hr MTTF in vacuum or humid environments |
| Category 1 metallurgical bond | Provides mechanical integrity and low-contact-resistance interface between silicon die and tungsten slug, sustaining shock up to 1000 g |
| Quadruple-layer passivation | Prevents surface charge accumulation and leakage drift under ionizing radiation (per MicroNote 050), validated for TID ≥ 100 krad(Si) |
| MIL-PRF-19500/477 qualification | Qualified to JAN, JANTX, JANTXV, and JANS levels - mandatory for DoD, NASA, and ESA flight programs requiring traceable lot-level test reports |
| Controlled avalanche capability | Peak reverse power handling up to 175 W enables safe clamping of inductive kickback without secondary breakdown in relay driver circuits |
Applications
| Avionics Power Supply | Satellite DC/DC Converter |
|---|---|
Use Scenario: Primary output rectification in 28 V input, 5 V/10 A regulated bus converter operating at 300 kHz. IC Role / Device Role / Timing Role: Ultrafast recovery rectifier handling continuous 2.5 A DC output with minimal switching loss and EMI. Use Value: 25 ns trr and 0.875 V VF reduce conduction and recovery losses by 37% vs. standard fast recovery diodes, improving thermal margin in sealed enclosures. |
Use Scenario: Secondary-side synchronous rectifier replacement in radiation-hardened 48 V→12 V isolated converter on LEO satellite payload. IC Role / Device Role / Timing Role: High-reliability uncontrolled rectifier in transformer-isolated topology where gate drive complexity is avoided. Use Value: Inherent radiation hardness (TID ≥ 100 krad) and −65 °C to +175 °C operation eliminate need for shielding or derating in orbital thermal vacuum. |
| Ground Vehicle Power Module | Nuclear Instrumentation System |
Use Scenario: Input rectification in 270 V DC aircraft starter-generator interface module exposed to MIL-STD-704E transients. IC Role / Device Role / Timing Role: Surge-tolerant front-end rectifier absorbing repetitive 35 A/8.3 ms line surges without parameter shift. Use Value: 35 A IFSM rating and controlled avalanche behavior prevent catastrophic failure during generator fault conditions. |
Use Scenario: Signal conditioning front-end in neutron detection electronics operating inside reactor containment. IC Role / Device Role / Timing Role: Low-leakage, high-TJ rectifier in precision analog power rails where IR ≤ 1 µA at 125 °C is required. Use Value: 1 µA max reverse current at 50 V/125 °C ensures <0.5 nA offset drift in charge-integration amplifiers over 15-year service life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5802US | Same die, identical electrical specs, but US package (two square end caps); RθJEC = 13 °C/W unchanged | Requires different PCB pad layout due to dual-square geometry; not mechanically interchangeable with URS footprint | Select 1N5802US only if board layout supports US mechanical outline and no end-cap thermal asymmetry is required |
| Vishay VS-2EY50A-M3/54 | Commercial-grade, 50 V/2.5 A, 35 ns trr, TO-277 package; no MIL qualification or radiation hardening | Lacks JANS/JANTXV qualification, Category 1 bond, or controlled avalanche rating; unsuitable for flight or nuclear environments | Use VS-2EY50A-M3/54 only for cost-sensitive industrial prototypes where MIL-PRF-19500 compliance is not mandated |
Compared with 1N5802US and VS-2EY50A-M3/54, the 1N5802URS/TR uniquely combines hermetic URS packaging, MIL-PRF-19500/477 qualification, and radiation tolerance-making it the sole option for mission-critical systems where parameter stability under extreme stress is non-negotiable.
Availability
1N5802URS/TR is available at Aetrix Electronics and suitable for avionics power supply design, satellite DC/DC converter development, and nuclear instrumentation system integration requiring stable component supply across extended production lifecycles.
Supply support for 1N5802URS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor manufacturer specializing in high-reliability, radiation-hardened, and aerospace-grade components with deep heritage in defense and space electronics.
The 1N5802URS/TR belongs to Microsemi's military-qualified ultrafast rectifier family, engineered specifically for power conversion in environments demanding guaranteed parametric stability under thermal shock, radiation exposure, and long-term vacuum operation.
FAQ
What is the maximum junction temperature rating for the 1N5802URS/TR?
The 1N5802URS/TR has a specified junction and storage temperature range of −65 °C to +175 °C per MIL-PRF-19500/477. This rating is validated through temperature cycling, steady-state burn-in, and thermal transient testing across all qualified reliability levels (JAN through JANS). The 1N5802URS/TR maintains full electrical compliance within this full range when mounted per recommended end-cap thermal interface guidelines.
Does the 1N5802URS/TR have RoHS-compliant versions available?
RoHS-compliant versions of the 1N5802URS/TR are available only in commercial-grade configurations, marked with "e3" suffix per part nomenclature. Military-grade variants (JAN, JANTX, JANTXV, JANS) retain Sn/Pb terminations to meet solderability and intermetallic reliability requirements defined in MIL-STD-750. The 1N5802URS/TR RoHS version uses matte tin over nickel over copper plating, qualified to JEDEC J-STD-020 moisture sensitivity level 1.
How does the URS package differ mechanically from the US package for the 1N5802URS/TR?
The URS package of the 1N5802URS/TR features one square end cap and one round end cap, whereas the US variant has two square end caps. This asymmetry in the URS configuration enables directional thermal mounting-e.g., square end to heatsink, round end to PCB-without rotational ambiguity. Both share identical electrical characteristics and 13 °C/W RθJEC, but their pad layouts are not interchangeable per Microsemi Package Dimensions drawing T4-LDS-0211-1.
What is the reverse recovery time test condition for the 1N5802URS/TR?
The 25 ns reverse recovery time (trr) for the 1N5802URS/TR is measured under the standardized condition: IF = 0.5 A forward current, IRM = 0.5 A peak reverse current, and IR(REC) = 0.05 A recovery reference current. This test method aligns with JEDEC JESD24-10 and is performed at 25 °C ambient using a pulsed waveform with 50 Ω source impedance, as documented in Microsemi's T4-LDS-0211-1 Rev. 1 test report.
Is the 1N5802URS/TR suitable for use in synchronous rectification topologies?
No-the 1N5802URS/TR is an uncontrolled rectifier diode and lacks gate control or body-diode optimization for synchronous rectification. Its 25 ns trr and low VF make it ideal for high-frequency hard-switched topologies like flyback or forward converters where MOSFET-based synchronous rectification is impractical due to timing constraints or isolation complexity. For synchronous designs, discrete MOSFETs or integrated controllers should be used instead of the 1N5802URS/TR.
1N5802URS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, A
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io):
- 1A
- Voltage - Forward (Vf) (Max) @ If:
- 875 mV @ 1 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 25 ns
- Current - Reverse Leakage @ Vr:
- 1 µA @ 50 V
- Capacitance @ Vr, F:
- 25pF @ 10V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
- Operating Temperature - Junction:
- -65°C ~ 175°C
1N5802URS/TR FAQ
1.How can I place an order for 1N5802URS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5802URS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5802URS/TR reliable?
The price and inventory of 1N5802URS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5802URS/TR is usually 5 days.
3.What payment methods are accepted for 1N5802URS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5802URS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5802URS/TR?
1N5802URS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5802URS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5802URS/TR?
For technical support, including 1N5802URS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5802URS/TR requirements.
6.How does Aetrix verify that 1N5802URS/TR is sourced from the original manufacturer or authorized distributors?
All 1N5802URS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5802URS/TR meets industry standards.
7.What is the process for return or replacement of 1N5802URS/TR?
All 1N5802URS/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N5802URS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5802URS/TR part is unused and in its original packaging.
Return procedure for 1N5802URS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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