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Microchip Technology 1N5804URS/TR
- Part No.:
- 1N5804URS/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N5804URS/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:9,048
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Product details
Overview
1N5804URS/TR from Microsemi is a military-qualified ultrafast recovery glass rectifier diode in URS (one square + one round end cap) hermetic package, rated for 100 V working peak reverse voltage, 2.5 A average output current at TEC = 75 °C, and 25 ns reverse recovery time. It serves as a high-reliability AC/DC input or freewheeling diode in radiation-hardened power converters for aerospace and defense systems.
For engineers reviewing the 1N5804URS/TR datasheet, 1N5804URS/TR pinout, 1N5804URS/TR application, or 1N5804URS/TR equivalent, key selection criteria include its MIL-PRF-19500/477 qualification level (JAN/JANTXV/JANS), voidless glass construction, Category 1 metallurgical bond, and controlled avalanche capability under transient overvoltage conditions.
Technical Context
This device operates as a unidirectional silicon PN junction rectifier with ultrafast switching behavior enabled by optimized carrier lifetime control. Its 25 ns reverse recovery time (measured at IF = 0.5 A, IR(REC) = 0.05 A) supports high-frequency operation up to ~2 MHz in hard-switched topologies.
The URS package features tungsten slugs and hermetically sealed voidless glass, delivering 13 °C/W junction-to-end-cap thermal resistance and enabling stable operation from –65 °C to +175 °C. Its 100 V VRWM and 35 A IFSM support robust surge handling in pulsed power and motor drive clamp circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 100 V - Maximum continuous reverse voltage before breakdown; defines safe operating range in DC-link or snubber applications. |
| IO1 | 2.5 A @ TEC = 75 °C - Sustained forward current rating when mounted on a thermally controlled end cap; requires heatsinking above 125 °C. |
| trr | 25 ns - Time to recover blocking state after forward conduction; enables efficient operation in >500 kHz SMPS designs. |
| VF max | 0.975 V @ IF = 2.5 A - Forward voltage drop determining conduction loss and thermal load in high-current paths. |
| RθJEC | 13 °C/W - Thermal resistance from junction to end cap; allows direct thermal interface to chassis or cold plate without PCB copper pour. |
| IFSM | 35 A - Non-repetitive surge current rating for 8.3 ms half-sine pulses; supports inrush and fault-current clamping. |
| C | 25 pF @ 10 V, 1 MHz - Junction capacitance affecting high-frequency noise coupling and EMI filter design. |
Pinout & Package
The 1N5804URS/TR uses a hermetically sealed URS package (one square end cap, one round end cap), with axial polarity indicated by a cathode band on the glass body. Terminals are tin/lead or RoHS-compliant matte tin over nickel over copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to AC source or switch node; must withstand 35 A surge and 100 V reverse bias. |
| Cathode | Forward current exit / reverse blocking terminal | Marked by color band; ties to DC bus or ground return; handles controlled avalanche during transients. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination, ensuring long-term reliability in vacuum or high-humidity environments. |
| Category 1 metallurgical bond | Provides mechanical integrity and low-resistance interconnect between silicon die and tungsten slug, critical for thermal cycling survival. |
| Controlled avalanche capability | Enables safe energy dissipation during voltage transients without destructive failure, supporting ruggedized clamp circuits. |
| MIL-PRF-19500/477 qualification | Validated performance across JAN, JANTX, JANTXV, and JANS reliability levels for mission-critical avionics and space electronics. |
Applications
| Spacecraft Power Distribution | Aerospace DC-DC Converters |
|---|---|
Use Scenario: Input rectification in redundant 28 V DC power buses on LEO satellites, exposed to total ionizing dose and single-event effects. IC Role / Device Role / Timing Role: Ultrafast recovery rectifier providing bidirectional isolation and ESD-transient suppression at converter inputs. Use Value: Radiation hardness per MicroNote 050 and 175 °C max junction temperature enable uninterrupted operation in orbital thermal cycles. | Use Scenario: Freewheeling diode in 400 Hz aircraft auxiliary power unit (APU) DC-DC modules with strict EMI limits. IC Role / Device Role / Timing Role: High-speed clamp preventing MOSFET shoot-through during synchronous rectification transitions. Use Value: 25 ns trr minimizes reverse recovery charge (Qrr) and associated switching losses at 200–500 kHz switching frequencies. |
| Military Radar Pulse Modulators | High-Reliability Industrial UPS |
Use Scenario: Charging path diode in solid-state pulse-forming networks (PFNs) requiring nanosecond-level turn-off fidelity. IC Role / Device Role / Timing Role: Fast-recovery blocking element isolating capacitor banks during high-dV/dt discharge events. Use Value: Controlled avalanche behavior absorbs 35 A surge peaks without parametric shift, preserving PFN timing accuracy. | Use Scenario: Output rectifier in 3-phase online UPS inverters operating continuously at 60 °C ambient with 15-year service life. IC Role / Device Role / Timing Role: Hermetic glass rectifier replacing plastic-packaged alternatives to prevent humidity-induced leakage degradation. Use Value: Voidless seal and –65 °C to +175 °C operating range ensure zero field failures over extended thermal cycling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5804US | Same die, identical electrical specs, but US package (two square end caps); RθJEC = 13 °C/W unchanged. | Requires different PCB pad layout due to dual-square footprint; not mechanically interchangeable with URS. | Select 1N5804US only if board layout accommodates symmetrical end caps and no end-cap asymmetry is required for mechanical alignment. |
| SM5804TR | Commercial-grade surface-mount variant; same VRWM, trr, and IO1, but lacks MIL-PRF-19500 qualification and hermetic seal. | Suitable for non-military industrial use; not rated for radiation exposure or extended temperature cycling. | Choose SM5804TR for cost-sensitive commercial power supplies where military reliability and hermeticity are not mandated. |
Compared with 1N5804US and SM5804TR, the 1N5804URS/TR uniquely combines asymmetric URS packaging for mechanical indexing, full MIL-PRF-19500 qualification, and hermetic voidless glass-making it the sole option for space-qualified, radiation-hardened, and high-temperature cyclic applications.
Availability
1N5804URS/TR is available at Aetrix Electronics and suitable for spacecraft power distribution, aerospace DC-DC converters, military radar pulse modulators, and high-reliability industrial UPS systems requiring stable component supply across extended product lifecycles.
Supply support for 1N5804URS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor manufacturer specializing in high-reliability, radiation-hardened, and military-qualified analog and discrete components.
The 1N5804URS/TR belongs to Microsemi's ultrafast hermetic rectifier family, engineered specifically for mission-critical power conversion in aerospace, defense, and nuclear instrumentation where failure is not an option.
FAQ
What is the maximum junction temperature rating for the 1N5804URS/TR?
The 1N5804URS/TR has a maximum junction temperature of +175 °C and minimum storage temperature of –65 °C, validated per MIL-PRF-19500/477. This wide range supports operation in extreme environments such as satellite thermal vacuum chambers and jet engine-mounted electronics. The 1N5804URS/TR maintains parameter stability across this full range when derated per datasheet curves.
Does the 1N5804URS/TR have RoHS-compliant versions?
Yes, RoHS-compliant versions of the 1N5804URS/TR are available for commercial-grade use only, featuring matte tin plating over nickel over copper terminals. Military-grade variants (JAN/JANTXV/JANS) retain Sn/Pb terminations to meet legacy solderability and reliability requirements. The 1N5804URS/TR RoHS option is marked with "e3" in the nomenclature per JEDEC standards.
How does the URS package differ mechanically from the US package in the 1N5804 series?
The URS package of the 1N5804URS/TR has one square end cap and one round end cap, enabling mechanical orientation control during automated placement and thermal interface alignment. In contrast, the US package (e.g., 1N5804US) has two square end caps. Both share identical electrical specs and thermal resistance (RθJEC = 13 °C/W), but the 1N5804URS/TR's asymmetric geometry prevents rotational misalignment in high-vibration mounts.
What is the reverse recovery time test condition for the 1N5804URS/TR?
The 1N5804URS/TR reverse recovery time of 25 ns is measured under standardized conditions: forward current IF = 0.5 A, reverse current IRM = 0.5 A, and recovery current threshold IR(REC) = 0.05 A. These conditions reflect real-world hard-switching behavior in DC-DC converters and are specified as a maximum value in the Electrical Characteristics table.
Is the 1N5804URS/TR suitable for avalanche energy absorption?
Yes, the 1N5804URS/TR is characterized for controlled avalanche operation, with peak reverse power capability explicitly cited in the Applications section. Its internal structure allows repetitive energy dissipation during transient overvoltage events without parametric drift or catastrophic failure-making the 1N5804URS/TR appropriate for snubberless clamp circuits in high-reliability inverters and radar modulators.
1N5804URS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, A
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io):
- 1A
- Voltage - Forward (Vf) (Max) @ If:
- 875 mV @ 1 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 25 ns
- Current - Reverse Leakage @ Vr:
- 1 µA @ 100 V
- Capacitance @ Vr, F:
- 25pF @ 10V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
- Operating Temperature - Junction:
- -65°C ~ 175°C
1N5804URS/TR FAQ
1.How can I place an order for 1N5804URS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5804URS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5804URS/TR reliable?
The price and inventory of 1N5804URS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5804URS/TR is usually 5 days.
3.What payment methods are accepted for 1N5804URS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5804URS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5804URS/TR?
1N5804URS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5804URS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5804URS/TR?
For technical support, including 1N5804URS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5804URS/TR requirements.
6.How does Aetrix verify that 1N5804URS/TR is sourced from the original manufacturer or authorized distributors?
All 1N5804URS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5804URS/TR meets industry standards.
7.What is the process for return or replacement of 1N5804URS/TR?
All 1N5804URS/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N5804URS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5804URS/TR part is unused and in its original packaging.
Return procedure for 1N5804URS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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