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Microchip Technology 1N5806URS/TR
- Part No.:
- 1N5806URS/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N5806URS/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:3,877
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Product details
Overview
1N5806URS/TR from Microsemi is a military-qualified ultrafast recovery glass rectifier diode in URS (one square + one round end cap) hermetic package, rated for 150 V working peak reverse voltage, 2.5 A average forward current at TEC = 75 °C, and 25 ns reverse recovery time. It serves as a high-reliability output rectifier in switching power supplies for aerospace and defense systems.
For engineers reviewing the 1N5806URS/TR datasheet, 1N5806URS/TR pinout, 1N5806URS/TR application, or 1N5806URS/TR equivalent, key selection criteria include its MIL-PRF-19500/477 qualification level (JAN/JANTXV/JANS), voidless glass hermetic seal, Category 1 metallurgical bond, and controlled avalanche capability under transient reverse stress.
Technical Context
This device belongs to Microsemi's ultrafast recovery rectifier family designed for high-reliability DC–DC conversion where failure tolerance is critical. Its 25 ns trr and low 0.975 V forward voltage at 2.5 A enable efficient high-frequency operation while maintaining robust thermal performance via 13 °C/W junction-to-end-cap resistance.
The URS package uses tungsten slugs and tin/lead or RoHS-compliant matte tin terminations over nickel-copper, with cathode polarity marked by a color band. It supports surge currents up to 35 A (8.3 ms, 1 min intervals) and operates across –65 °C to +175 °C junction temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 150 V - Maximum continuous reverse voltage before breakdown; defines safe operating limit in flyback or forward converter secondary side. |
| IO1 @ TEC = 75 °C | 2.5 A - Sustained average forward current when end-cap temperature is held at 75 °C; requires heatsinking or thermal pad design per Figure 3. |
| trr | 25 ns - Time to recover from conduction to blocking state; enables >1 MHz switching without excessive switching loss or voltage overshoot. |
| VF @ 2.5 A | 0.975 V - Forward voltage drop at rated current; directly impacts conduction loss and thermal load in high-current rectification paths. |
| RθJEC | 13 °C/W - Thermal resistance from junction to end cap; enables precise thermal modeling when mounted to metal-core PCB or chassis. |
| IFSM | 35 A - Non-repetitive surge current rating; supports inrush handling during cold-start or fault conditions in regulated power supplies. |
| C @ 10 V, 1 MHz | 25 pF - Junction capacitance; influences high-frequency noise coupling and EMI filter design in SMPS output stages. |
Pinout & Package
1N5806URS/TR is a two-terminal axial-leaded surface-mount diode in the URS package: one square end cap and one round end cap, with cathode identified by a color band on the glass body. Terminations are tin/lead or RoHS-compliant matte tin over nickel over copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to transformer secondary or switch node; must withstand peak inverse voltage and surge current without metallurgical degradation. |
| Cathode | Forward current exit point | Marked by color band; connects to output filter capacitor or load return; carries full rectified current and defines reference for voltage regulation feedback. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination risk-critical for long-term reliability in vacuum or high-humidity space environments. |
| Category 1 metallurgical bond | Ensures mechanical integrity under thermal cycling and vibration; validated per MIL-PRF-19500/477 for JANS-level radiation-hardened applications. |
| Controlled avalanche capability | Withstands transient reverse power surges up to peak reverse power rating without catastrophic failure-enables simplified snubberless designs. |
| Quadruple-layer passivation | Provides enhanced surface stability against ion migration and surface leakage in high-bias, high-temperature operation (>125 °C). |
Applications
| Aerospace Power Conversion | Military Radar Transmitter Supplies |
|---|---|
Use Scenario: High-efficiency DC–DC conversion in satellite bus power systems requiring zero-failure operation over 15+ year missions. IC Role / Device Role / Timing Role: Output rectifier in resonant LLC or phase-shifted full-bridge converters operating at 300–500 kHz. Use Value: 25 ns trr minimizes switching loss; hermetic seal prevents parametric drift in vacuum; 175 °C max junction temp supports uncooled operation in sealed enclosures. |
Use Scenario: Pulse-forming network (PFN) charging and modulator supply rectification in ground-based radar transmitters. IC Role / Device Role / Timing Role: Fast-recovery high-surge rectifier in high-voltage, high-dI/dt charging circuits. Use Value: 35 A IFSM handles repetitive PFN charge pulses; controlled avalanche absorbs reverse energy without clamping diodes; JANTXV qualification ensures lot traceability and screening. |
| Spacecraft Payload Regulators | Hardened Industrial UPS Systems |
Use Scenario: Point-of-load (POL) DC–DC regulation for FPGA and ADC subsystems aboard deep-space probes. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacement in isolated flyback topologies. Use Value: Low VF reduces conduction loss at 1–2 A loads; radiation hardness per MicroNote 050 eliminates single-event burnout risk in GEO orbits. |
Use Scenario: Battery backup rectification in nuclear plant control system UPS units requiring 40-year service life. IC Role / Device Role / Timing Role: Primary AC–DC input rectifier in redundant offline SMPS modules. Use Value: –65 °C to +175 °C operating range accommodates extreme ambient swings; MIL-spec screening ensures zero infant mortality in field-deployed units. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5806US | Same electrical specs but US package (two square end caps); RθJEC = 13 °C/W identical; same MIL-PRF-19500/477 qualification levels available. | US variant optimized for automated pick-and-place with symmetric footprint; URS preferred where asymmetric mounting improves mechanical retention or thermal path asymmetry is intentional. | Select 1N5806US if board layout uses symmetric pad geometry; choose 1N5806URS/TR when mechanical strain relief or differential thermal expansion management is required. |
| Vishay VS-1N5806-E3/54 | Commercial-grade, non-MIL-qualified; VF = 0.95 V @ 2.5 A (slightly lower), trr = 30 ns (5 ns slower), no Category 1 bond or hermetic seal. | Limited to industrial-grade UPS or telecom rectifiers where cost sensitivity outweighs lifetime reliability requirements. | Use only in non-safety-critical, non-radiation-exposed applications; not suitable for JANS/JANTXV programs or space-qualified BOMs. |
Compared with 1N5806US and VS-1N5806-E3/54, the 1N5806URS/TR uniquely combines MIL-qualified hermeticity, asymmetric URS thermal mounting, and guaranteed 25 ns trr-making it the sole choice for flight-critical rectification where parametric stability over 20 years is mandatory.
Availability
1N5806URS/TR is available at Aetrix Electronics and suitable for aerospace power conversion, military radar transmitter supplies, spacecraft payload regulators, and hardened industrial UPS systems requiring stable component supply across extended product lifecycles.
Supply support for 1N5806URS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for defense, aerospace, and industrial markets.
The 1N5806URS/TR belongs to Microsemi's ultrafast hermetic rectifier product line, engineered specifically for mission-critical power conversion where failure is not an option-including satellite bus systems, missile guidance electronics, and nuclear instrumentation.
FAQ
What is the maximum junction temperature rating for the 1N5806URS/TR?
The 1N5806URS/TR has a maximum junction temperature of +175 °C and a storage temperature range of –65 °C to +175 °C. This wide range supports operation in sealed, unventilated enclosures typical of space and airborne platforms. Derating begins above 125 °C at 50 mA/°C for end-cap temperature, ensuring thermal safety margins are maintained throughout the device's operational life.
Is the 1N5806URS/TR RoHS compliant?
The 1N5806URS/TR is available in both RoHS-compliant (e3 marking) and non-RoHS versions, but RoHS compliance applies only to commercial-grade units-not JAN, JANTX, JANTXV, or JANS qualified variants. The RoHS-compliant version uses matte tin over nickel over copper terminations, while legacy versions retain tin/lead plating per MIL-PRF-19500/477 requirements.
How does the URS package differ mechanically from the US package in the 1N5806 series?
The URS package features one square end cap and one round end cap, whereas the US package has two square end caps. This asymmetry in the 1N5806URS/TR allows differential thermal expansion management and improved mechanical retention in vibration-prone environments. Both share identical electrical specs and thermal resistance (RθJEC = 13 °C/W), but URS enables unique board-level stress relief strategies.
What is the reverse recovery time test condition for the 1N5806URS/TR?
The reverse recovery time (trr = 25 ns) for the 1N5806URS/TR is measured under the conditions: IF = 0.5 A, IRM = 0.5 A, and IR(REC) = 0.05 A. These standardized test parameters ensure consistent comparison across the ultrafast rectifier family and validate performance in high-dI/dt switching applications such as resonant converters and Class-D amplifiers.
Does the 1N5806URS/TR support controlled avalanche operation?
Yes, the 1N5806URS/TR is characterized for controlled avalanche with specified peak reverse power capability. This feature allows it to safely absorb transient reverse energy without destructive failure-enabling simplified snubberless designs in high-voltage switching circuits. Avalanche performance is validated per Microsemi MicroNote 050 and included in JANS-level radiation hardness testing.
1N5806URS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, A
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 150 V
- Current - Average Rectified (Io):
- 1A
- Voltage - Forward (Vf) (Max) @ If:
- 875 mV @ 1 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 25 ns
- Current - Reverse Leakage @ Vr:
- 1 µA @ 150 V
- Capacitance @ Vr, F:
- 25pF @ 10V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
- Operating Temperature - Junction:
- -65°C ~ 175°C
1N5806URS/TR FAQ
1.How can I place an order for 1N5806URS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5806URS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5806URS/TR reliable?
The price and inventory of 1N5806URS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5806URS/TR is usually 5 days.
3.What payment methods are accepted for 1N5806URS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5806URS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5806URS/TR?
1N5806URS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5806URS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5806URS/TR?
For technical support, including 1N5806URS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5806URS/TR requirements.
6.How does Aetrix verify that 1N5806URS/TR is sourced from the original manufacturer or authorized distributors?
All 1N5806URS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5806URS/TR meets industry standards.
7.What is the process for return or replacement of 1N5806URS/TR?
All 1N5806URS/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N5806URS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5806URS/TR part is unused and in its original packaging.
Return procedure for 1N5806URS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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