Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Microchip Technology 1N5807URS/TR

Part No.:
1N5807URS/TR
Manufacturer:
Microchip Technology
Category:
Single Diodes
Package:
SQ-MELF, B
Datasheet:
Aetrix1N5807URS/TR.pdf
Description:
UFR,FRR
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,843

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

1N5807URS/TR from Microsemi is an ultrafast recovery glass rectifier diode in MELF-style URS package (one square + one round end cap), rated for 50 V working peak reverse voltage, 6.0 A average rectified current at 75 °C case temperature, and 30 ns reverse recovery time. It serves as a high-reliability power conversion switch in military-grade DC/DC converters and radiation-hardened power supplies.

For engineers reviewing the 1N5807URS/TR datasheet, 1N5807URS/TR pinout, 1N5807URS/TR application, or 1N5807URS/TR equivalent, key selection criteria include its void-less hermetic glass construction, Category 1 metallurgical bond, MIL-PRF-19500/477 qualification (JAN/JANTXV levels), and low thermal resistance (6.5 °C/W junction-to-end-cap).

Technical Context

This device belongs to Microsemi's ultrafast recovery rectifier family designed for high-reliability power conversion where failure tolerance is critical. Its internal tungsten slug construction and quadruple-layer passivation enable stable operation across –65 °C to +175 °C junction temperature range while maintaining controlled avalanche capability and low forward voltage (0.875 V max at 4 A pulse).

The URS package configuration-featuring one square and one round end cap-supports surface-mount assembly with EIA-296 tape-and-reel delivery and enables direct thermal path to PCB pads. Reverse recovery is characterized under strict conditions: IF = 1.0 A, IRM = 1.0 A, IR(REC) = 0.10 A, and di/dt ≥ 100 A/µs.

Key Specifications

ParameterValue and Actual Design Meaning
VRWM50 V - Maximum sustainable reverse voltage without breakdown across full operating temperature range
IO1 @ TL = 75 °C6.0 A - Continuous average forward current rating with 3/8″ lead length thermal path
trr30 ns - Time required to transition from forward conduction to reverse blocking under defined di/dt and current conditions
VFM @ 4 A (pulse)0.875 V - Peak forward voltage drop limiting conduction loss in high-frequency switching stages
RθJEC6.5 °C/W - Junction-to-end-cap thermal resistance enabling efficient heat transfer to mounting surface
IFSM125 A - Non-repetitive surge current handling capability for line transient protection
CJ @ 10 V, 1 MHz60 pF - Junction capacitance affecting high-frequency switching noise and EMI behavior

Pinout & Package

1N5807URS/TR uses a hermetically sealed void-less glass MELF-style URS package (one square end cap, one round end cap), with cathode indicated by blue band on body. Terminals are tin/lead or RoHS-compliant matte tin over nickel over copper.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward current entry pointConnected to input side of rectification stage; accepts pulsed or continuous forward current up to 6.0 A average
CathodeForward current exit / reverse voltage terminalMarked by blue band; carries output current to load and withstands up to 50 V reverse bias continuously

Key Features

FeatureDesign Value
Void-less hermetic glass sealEliminates moisture ingress and internal delamination risk in long-life, high-vacuum, or space environments
Category 1 metallurgical bondEnsures mechanical integrity and thermal stability under extreme thermal cycling and shock conditions
Quadruple-layer passivationProvides enhanced surface insulation and leakage suppression at high reverse bias and elevated temperature
MIL-PRF-19500/477 qualificationValidated reliability for JAN, JANTX, JANTXV, and JANS levels-required for defense and aerospace programs
Controlled avalanche capabilityEnables safe energy dissipation during inductive turn-off transients without destructive failure

Applications

Military Power ConversionSpacecraft DC/DC Converters

Use Scenario: High-efficiency, radiation-tolerant AC/DC and DC/DC conversion in airborne radar power systems.

IC Role / Device Role / Timing Role: Ultrafast rectifier in synchronous or asymmetrical half-bridge output stage.

Use Value: 30 ns trr and 6.0 A IO1 support >200 kHz switching with minimal reverse recovery loss and thermal stress.

Use Scenario: Secondary-side rectification in isolated flyback or forward converters onboard LEO satellites.

IC Role / Device Role / Timing Role: Hermetically sealed rectifier handling regulated 28 V bus distribution under total ionizing dose exposure.

Use Value: Inherent radiation hardness per MicroNote 050 and –65 °C to +175 °C operation ensure mission-critical uptime.

High-Reliability Industrial SMPSAvionics Power Supplies

Use Scenario: Front-end rectification in medical imaging power modules requiring zero field failures.

IC Role / Device Role / Timing Role: Primary rectifier in bridge configuration delivering clean 48 V intermediate bus.

Use Value: 125 A IFSM and low RθJEC (6.5 °C/W) sustain repeated lightning-surge events without thermal runaway.

Use Scenario: Output rectification in certified DO-160G Level D power supplies for flight control electronics.

IC Role / Device Role / Timing Role: Fast-recovery diode in redundant dual-output converter with fault-isolation requirements.

Use Value: MIL-qualified construction and controlled avalanche behavior meet safety-critical fault containment standards.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
1N5807USSame electrical specs but US package (two square end caps); not URS form factorRequires different PCB pad layout; lacks URS asymmetric thermal interface geometrySelect 1N5807US only if board layout supports dual-square-end-cap footprint and tape-and-reel compatibility is confirmed
1N5807Axial-leaded through-hole variant; identical VRWM, trr, and VF but higher RθJA due to lead-frame thermal pathSuitable for prototyping or legacy through-hole designs; not surface-mount compatibleChoose 1N5807 when manual assembly, rework flexibility, or heritage board compatibility outweigh SMT density benefits

Compared with 1N5807US and 1N5807, the 1N5807URS/TR offers optimized surface-mount thermal performance via its asymmetric URS end-cap geometry, tighter MIL-qualified screening, and standardized EIA-296 tape-and-reel packaging-making it preferred for new high-reliability SMT designs.

Availability

1N5807URS/TR is available at Aetrix Electronics and suitable for military power conversion, spacecraft DC/DC converters, and high-reliability industrial SMPS requiring stable component supply, long-term traceability, and MIL-spec compliance.

Supply support for 1N5807URS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and defense-grade analog and discrete components.

The 1N5807URS/TR belongs to Microsemi's ultrafast glass rectifier product line, engineered specifically for mission-critical power conversion in aerospace, defense, and industrial systems demanding MIL-PRF-19500 qualification and hermetic reliability.

FAQ

What is the maximum working peak reverse voltage for the 1N5807URS/TR?

The 1N5807URS/TR has a VRWM of 50 V, meaning it can reliably block up to 50 volts of reverse voltage across its full operating temperature range (–65 °C to +175 °C). This rating is validated per MIL-PRF-19500/477 and applies to both JAN and commercial versions of the 1N5807URS/TR.

Is the 1N5807URS/TR RoHS compliant?

The 1N5807URS/TR is available in RoHS-compliant versions only for commercial-grade units (marked with "e3" suffix), using matte tin over nickel over copper terminals. MIL-qualified variants (JAN/JANTXV) retain Sn/Pb terminations and are exempt from RoHS per defense procurement policy. Always verify suffix and grade before ordering the 1N5807URS/TR.

What does "URS" signify in the 1N5807URS/TR part number?

"URS" denotes the package configuration: one square end cap and one round end cap, distinguishing it from "US" (two square end caps) and axial "1N5807". This asymmetric geometry optimizes thermal transfer in surface-mount applications and is standardized per EIA-296 tape-and-reel packaging for the 1N5807URS/TR.

How is the 1N5807URS/TR qualified for high-reliability use?

The 1N5807URS/TR is qualified to MIL-PRF-19500/477 at JAN, JANTX, JANTXV, and JANS levels, featuring void-less hermetic glass sealing, Category 1 metallurgical bonds, quadruple-layer passivation, and radiation hardness per MicroNote 050-key attributes verified during lot acceptance testing for the 1N5807URS/TR.

What is the thermal resistance from junction to end cap for the 1N5807URS/TR?

The 1N5807URS/TR has a specified RθJEC of 6.5 °C/W, measured from junction to end cap under standard test conditions. This low value reflects the efficient thermal path enabled by tungsten slugs and hermetic glass construction, directly supporting high-current operation in thermally constrained 1N5807URS/TR designs.

1N5807URS/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
SQ-MELF, B
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
50 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
875 mV @ 4 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
30 ns
Current - Reverse Leakage @ Vr:
5 µA @ 50 V
Capacitance @ Vr, F:
60pF @ 10V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
B, SQ-MELF
Operating Temperature - Junction:
-65°C ~ 175°C

1N5807URS/TR FAQ

1.How can I place an order for 1N5807URS/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N5807URS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N5807URS/TR reliable?

The price and inventory of 1N5807URS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5807URS/TR is usually 5 days.

3.What payment methods are accepted for 1N5807URS/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5807URS/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N5807URS/TR?

1N5807URS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N5807URS/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N5807URS/TR?

For technical support, including 1N5807URS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5807URS/TR requirements.

6.How does Aetrix verify that 1N5807URS/TR is sourced from the original manufacturer or authorized distributors?

All 1N5807URS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5807URS/TR meets industry standards.

7.What is the process for return or replacement of 1N5807URS/TR?

All 1N5807URS/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N5807URS/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N5807URS/TR part is unused and in its original packaging.

Return procedure for 1N5807URS/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

1N5807URS/TR Tags

  • 1N5807URS/TR
  • 1N5807URS/TR PDF
  • 1N5807URS/TR Datasheet
  • 1N5807URS/TR Specifications
  • 1N5807URS/TR Images
  • Microchip Technology
  • Microchip Technology 1N5807URS/TR
  • Buy 1N5807URS/TR
  • 1N5807URS/TR Price
  • 1N5807URS/TR Distributor
  • 1N5807URS/TR Supplier
  • 1N5807URS/TR Wholesale
Related Products
1N4448X-TP
1N4448X-TP

Micro Commercial Co

1N4148WX-TP
1N4148WX-TP

Micro Commercial Co

1N4148TR
1N4148TR

onsemi

MMSD4148T1G
MMSD4148T1G

onsemi

MMBD914LT3G
MMBD914LT3G

onsemi

BAS16HT1G
BAS16HT1G

onsemi

1N914BWT
1N914BWT

onsemi

BAS21LT1G
BAS21LT1G

onsemi

LL4148
LL4148

onsemi

BAS16LT1G
BAS16LT1G

onsemi

MMSD914T1G
MMSD914T1G

onsemi

BAV21W-7-F
BAV21W-7-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER