Microchip Technology 1N5809URS/TR

Overview

1N5809URS/TR from Microsemi is an ultrafast recovery glass rectifier diode in MELF-style hermetic "URS" package (one square + one round end cap), rated for 100 V working peak reverse voltage, 6.0 A average forward current at 75 °C case temperature, and 30 ns reverse recovery time. It serves as a high-reliability power conversion component in military-grade switching power supplies requiring low forward voltage drop (0.875 V @ 4 A) and controlled avalanche capability.

For engineers reviewing the 1N5809URS/TR datasheet, 1N5809URS/TR pinout, 1N5809URS/TR application, or 1N5809URS/TR equivalent, key selection criteria include its MIL-PRF-19500/477 qualification (JANTXV level available), void-less hermetic glass construction, Category 1 metallurgical bond, and thermal resistance of 6.5 °C/W junction-to-end-cap - critical for high-temperature, radiation-hardened, and surge-tolerant designs.

Technical Context

This device belongs to Microsemi's ultrafast recovery rectifier family designed for high-reliability DC–DC conversion where failure tolerance is mandatory. Its 30 ns reverse recovery time and 100 V VRWM enable efficient operation in high-frequency switching topologies without excessive switching loss or voltage overshoot.

The URS package features a tungsten slug internal structure with tin/lead or RoHS-compliant matte tin termination, blue body marking, and cathode polarity indicated by a band. Thermal performance is defined by R_θJEC = 6.5 °C/W and R_θJX = 52 °C/W, supporting robust thermal management in constrained aerospace and defense enclosures.

Key Specifications

Pinout & Package

Package: Hermetically sealed void-less glass "URS" configuration - one square end cap and one round end cap, with tungsten slugs and tin/lead or RoHS-compliant matte tin over nickel over copper terminations. Cathode identified by blue band on body. Weight: 539 mg.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Compared with VS-12CWQ04FNTR-M3 and MUR1620CTG, the 1N5809URS/TR uniquely delivers 100 V VRWM, MIL-qualified hermetic reliability, and 6.5 °C/W thermal resistance in a compact MELF form factor - making it irreplaceable for high-reliability 100 V rectification where environmental survivability and long-term parametric stability are non-negotiable.

Availability

1N5809URS/TR is available at Aetrix Electronics and suitable for military power conversion, spacecraft DC–DC modules, and avionics switching supplies requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for 1N5809URS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and aerospace-grade analog and discrete components.

The 1N5809URS/TR belongs to Microsemi's ultrafast hermetic rectifier product line, engineered specifically for mission-critical power conversion in defense, space, and nuclear instrumentation systems where zero-failure tolerance is mandated.

FAQ

What is the maximum junction temperature rating for the 1N5809URS/TR?

The 1N5809URS/TR has a specified junction and storage temperature range of −65 °C to +175 °C. This wide range supports operation in extreme environments such as missile guidance systems and satellite power units. The 175 °C upper limit is enabled by the void-less hermetic glass package and Category 1 metallurgical bond, both validated under MIL-PRF-19500/477 screening. Derating begins above 75 °C case temperature per the IO1 specification.

Is the 1N5809URS/TR RoHS compliant?

The 1N5809URS/TR is available in both RoHS-compliant (e3 suffix) and non-RoHS versions, but RoHS compliance applies only to commercial-grade units - not JAN, JANTX, JANTXV, or JANS qualified variants. The RoHS version uses matte tin over nickel over copper termination instead of tin/lead. For MIL-spec applications, the non-RoHS variant is standard unless explicitly ordered with e3 designation and approved for the target qualification level.

How does the URS package differ from the US package for the 1N5809 series?

The URS package features one square end cap and one round end cap, while the US package has two square end caps. Both are MELF-style hermetic glass constructions, but the URS geometry provides asymmetric mechanical anchoring beneficial in vibration-prone installations. The 1N5809URS/TR's URS configuration is explicitly called out in the part nomenclature and matches the dimensional drawing on page 5 of T4-LDS-0168-1, including BD = 0.137–0.148″ and BL = 0.200–0.225″.

What is the reverse recovery time test condition for the 1N5809URS/TR?

The 1N5809URS/TR reverse recovery time (trr) is specified as 30 ns under the conditions: IF = 1.0 A, IRM = 1.0 A, IR(REC) = 0.10 A, and di/dt ≥ 100 A/µs. These parameters reflect real-world switching behavior in hard-commutated converters. The measurement is performed at TA = 25 °C and is guaranteed across the full −65 °C to +175 °C operating range per MIL-PRF-19500/477 test protocols.

Does the 1N5809URS/TR support controlled avalanche operation?

Yes, the 1N5809URS/TR is characterized for controlled avalanche with defined peak reverse power capability, as noted in the Applications/Benefits section of the datasheet. This feature allows safe energy absorption during transient overvoltage events - such as inductive kickback or load dump - without destructive failure. The device's ability to sustain avalanche is verified through standardized MIL-STD-750 Method 3015 testing and is integral to its qualification for high-reliability military systems.