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Microchip Technology 1N5811URS/TR
- Part No.:
- 1N5811URS/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
1N5811URS/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:4,814
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Product details
Overview
1N5811URS/TR from Microsemi is a military-qualified ultrafast recovery glass rectifier diode in URS (one square + one round end cap) MELF package, rated for 150 V working peak reverse voltage, 6.0 A average rectified output current at 75 °C, and 30 ns reverse recovery time. It serves as a high-reliability power conversion switch in radiation-hardened aerospace power supplies.
For engineers reviewing the 1N5811URS/TR datasheet, 1N5811URS/TR pinout, 1N5811URS/TR application, or 1N5811URS/TR equivalent, key selection criteria include its void-less hermetic glass construction, Category 1 metallurgical bond, JANTXV qualification per MIL-PRF-19500/477, and 125 A surge current capability under standardized 8.3 ms pulse conditions.
Technical Context
This device operates as a unidirectional silicon power rectifier with controlled avalanche capability and low thermal resistance (6.5 °C/W junction-to-end-cap). Its ultrafast 30 ns trr enables efficient operation in high-frequency switching topologies up to several hundred kHz.
The URS package features tungsten slugs and tin/lead terminations, with cathode polarity indicated by a blue band. It achieves 60 pF junction capacitance at 10 V reverse bias and 1 MHz, supporting stable high-speed transient response in DC-DC converter snubber networks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 150 V - Maximum sustainable reverse voltage across full operating temperature range (-65 °C to +175 °C) |
| IO1 @ TL=75 °C | 6.0 A - Continuous average forward current with end-cap temperature held at 75 °C |
| trr | 30 ns - Time to recover from conduction to blocking state under IF=1.0 A, IR=0.10 A, di/dt=100 A/µs |
| IFSM | 125 A - Non-repetitive peak forward surge current for ten 8.3 ms half-sine pulses at 1-min intervals |
| CJ @ 10 V, 1 MHz | 60 pF - Junction capacitance affecting high-frequency switching node impedance and EMI generation |
| RθJEC | 6.5 °C/W - Thermal resistance from junction to end-cap, critical for heatsink interface design in sealed enclosures |
Pinout & Package
Package: URS-type MELF (hermetically sealed void-less glass, one square end cap + one round end cap, 539 mg mass, blue band marking cathode).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to input side of bridge or transformer secondary; requires thermal anchoring to PCB copper for heat dissipation |
| Cathode | Forward current exit point | Marked by blue band; connects to output filter capacitor or load return; defines polarity in series/parallel stacking |
Key Features
| Feature | Design Value |
|---|---|
| Void-less hermetic glass seal | Eliminates internal moisture ingress and delamination risk over 20+ year mission life in vacuum or humid environments |
| Category 1 metallurgical bond | Ensures mechanical integrity under shock/vibration >100 g and thermal cycling from -65 °C to +175 °C |
| JANTXV qualification | Validated per MIL-PRF-19500/477 for use in flight-critical avionics without burn-in or lot acceptance testing waivers |
| Controlled avalanche capability | Supports safe clamping of inductive kickback transients up to 150 V without degradation or parametric shift |
Applications
| Spacecraft Power Distribution Unit | Military Radar Transmitter Modulator |
|---|---|
Use Scenario: DC bus rectification in radiation-hardened satellite power management systems operating in LEO orbit. IC Role / Device Role / Timing Role: Primary output rectifier in dual-active-bridge isolated DC-DC converter feeding 28 V payload bus. Use Value: 30 ns trr minimizes switching losses at 200 kHz operation; hermetic seal prevents performance drift under 100 krad(Si) total ionizing dose. | Use Scenario: Pulse-forming network (PFN) charging diode in ground-based S-band radar modulators. IC Role / Device Role / Timing Role: High-current unidirectional switch enabling rapid capacitor bank recharge between RF pulses. Use Value: 125 A IFSM withstands repetitive 100 A surge currents; low RθJEC ensures stable junction temperature during burst-mode operation. |
| Aerospace Avionics DC-DC Converter | Nuclear Instrumentation Front-End Supply |
Use Scenario: Input rectification stage in triple-redundant 270 V DC aircraft power system converters. IC Role / Device Role / Timing Role: Bridge leg diode in full-wave rectifier feeding synchronous buck controller. Use Value: 150 V VRWM provides 2× margin over nominal 270 V DC bus transients; RoHS-compliant version available for commercial subsystems. | Use Scenario: Bias supply rectification in gamma spectroscopy detector front-end modules deployed in reactor containment zones. IC Role / Device Role / Timing Role: Low-noise, high-stability rectifier for ultra-low-current analog signal chain power rails. Use Value: Quadruple-layer passivation suppresses surface leakage current below 5 µA at 125 °C, preserving measurement accuracy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5811US | Same die, US package (two square end caps); RθJEC = 6.5 °C/W identical; same electrical specs | Surface-mount footprint differs: US uses symmetric pads; URS requires asymmetric pad layout per Figure 5 | Select US for standard MELF reflow compatibility; choose URS when legacy board layout or mechanical retention favors mixed-end-cap geometry |
| VS-6EWH06FN-M3 | 600 V VRWM, 6 A IO1, but trr = 35 ns; TO-277A package; no MIL-spec qualification | Not suitable for space or JANTXV programs; intended for industrial SMPS with higher voltage margin needs | Use only in non-military commercial designs where 600 V standoff and lead-free compliance outweigh radiation hardness and qualification traceability |
Compared with 1N5811US and VS-6EWH06FN-M3, the 1N5811URS/TR uniquely combines JANTXV-level reliability, 150 V VRWM optimized for 270 V DC systems, and asymmetric URS packaging for mechanical stability in high-vibration launch environments-making it irreplaceable in certified aerospace rectification.
Availability
1N5811URS/TR is available at Aetrix Electronics and suitable for spacecraft power distribution units, military radar transmitter modulators, and aerospace avionics DC-DC converters requiring stable component supply across extended product lifecycles.
Supply support for 1N5811URS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, discrete devices, and RF solutions for defense, aerospace, and industrial markets.
The 1N58xx series belongs to Microsemi's military-qualified ultrafast rectifier product line, engineered specifically for mission-critical power conversion where failure is not an option-including launch vehicle power systems and nuclear instrumentation.
FAQ
What is the maximum working peak reverse voltage rating for the 1N5811URS/TR?
The 1N5811URS/TR has a VRWM of 150 V, meaning it can sustain up to 150 volts of reverse bias continuously across its full operating temperature range of –65 °C to +175 °C without breakdown. This rating is verified per MIL-PRF-19500/477 test conditions and applies to both JAN and JANTXV reliability levels of the 1N5811URS/TR.
Is the 1N5811URS/TR RoHS compliant?
The 1N5811URS/TR is available in RoHS-compliant versions only for commercial-grade units (marked with "e3" suffix), while military-grade variants (JAN/JANTX/JANTXV/JANS) retain Sn/Pb terminations to meet MIL-STD-750 solderability and reliability requirements. The 1N5811URS/TR datasheet specifies matte tin plating over nickel over copper for RoHS-compliant lots.
How does the URS package differ mechanically from the US package in the 1N5811 series?
The URS package of the 1N5811URS/TR features one square end cap and one round end cap, whereas the US variant uses two square end caps. This asymmetry in the 1N5811URS/TR improves mechanical retention on PCBs subject to high-g vibration and enables distinct orientation-dependent mounting per Microsemi Package Drawing T4-LDS-0168-1, Page 5.
What is the reverse recovery time specification for the 1N5811URS/TR, and under what test conditions is it measured?
The 1N5811URS/TR has a maximum reverse recovery time (trr) of 30 ns, measured under standardized conditions: IF = 1.0 A forward current, IRM = 1.0 A peak reverse current, IR(REC) = 0.10 A recovery threshold current, and di/dt ≥ 100 A/µs. These parameters are defined in Note 2 of the Electrical Characteristics table on Page 2 of the 1N5811URS/TR datasheet.
Does the 1N5811URS/TR support controlled avalanche operation, and how is this reflected in its design?
Yes, the 1N5811URS/TR supports controlled avalanche operation, evidenced by its specified peak reverse power capability and inclusion in Microsemi MicroNote 050 on inherent radiation hardness. This feature allows the 1N5811URS/TR to safely clamp inductive energy transients without parametric shift or catastrophic failure-critical in high-reliability power converters where snubberless design is required.
1N5811URS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, B
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 150 V
- Current - Average Rectified (Io):
- 3A
- Voltage - Forward (Vf) (Max) @ If:
- 875 mV @ 4 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 30 ns
- Current - Reverse Leakage @ Vr:
- 5 µA @ 150 V
- Capacitance @ Vr, F:
- 60pF @ 10V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
- Operating Temperature - Junction:
- -65°C ~ 175°C
1N5811URS/TR FAQ
1.How can I place an order for 1N5811URS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5811URS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5811URS/TR reliable?
The price and inventory of 1N5811URS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5811URS/TR is usually 5 days.
3.What payment methods are accepted for 1N5811URS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5811URS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5811URS/TR?
1N5811URS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5811URS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5811URS/TR?
For technical support, including 1N5811URS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5811URS/TR requirements.
6.How does Aetrix verify that 1N5811URS/TR is sourced from the original manufacturer or authorized distributors?
All 1N5811URS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5811URS/TR meets industry standards.
7.What is the process for return or replacement of 1N5811URS/TR?
All 1N5811URS/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N5811URS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5811URS/TR part is unused and in its original packaging.
Return procedure for 1N5811URS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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