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Diodes Incorporated 1N5817M-13
- Part No.:
- 1N5817M-13
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Diodes
- Package:
- DO-213AB, MELF (Glass)
- Datasheet:
-
1N5817M-13.pdf
- Description:
- DIODE SCHOTTKY 20V 1A MELF
- Quantity:
- Payment:
- Shipping:
Inventory:4,093
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Product details
Overview
1N5817M-13 from Diodes Incorporated is a surface-mount Schottky barrier rectifier in MELF glass package, rated for 1.0A average forward current, 20V peak repetitive reverse voltage, and 0.45V max forward voltage at 1.0A. It delivers low conduction loss and fast switching in DC/DC converter output stages and reverse polarity protection circuits.
For engineers reviewing the 1N5817M-13 datasheet, 1N5817M-13 pinout, 1N5817M-13 application, or 1N5817M-13 equivalent, key selection criteria include forward voltage drop at rated current, thermal resistance under PCB-mounted conditions, reverse leakage at elevated temperature, and MELF package handling compatibility with automated SMT lines.
Technical Context
This Schottky diode uses a planar epitaxial construction with guard ring termination to suppress edge breakdown and improve transient robustness. Its low VF stems from a low-barrier-height metal–semiconductor junction optimized for 20V-class operation.
The MELF glass package provides hermetic sealing and high thermal stability, enabling reliable operation from –60°C to +125°C ambient. Junction-to-ambient thermal resistance is 130 K/W under standard JEDEC test conditions on FR-4 board with no copper pour.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 20 V - Maximum non-repetitive reverse voltage before avalanche; sets upper limit for blocking capability in 12V system inputs. |
| IO @ TT=90°C | 1.0 A - Continuous DC current rating when terminal temperature is held at 90°C; defines usable current in thermally constrained layouts. |
| VF @ IF=1.0A | 0.45 V - Forward voltage at full rated current; directly determines conduction loss (0.45W) and thermal rise in power path. |
| IR @ VRRM, TA=25°C | 1.0 mA - Reverse leakage at full rated reverse voltage and room temperature; impacts standby power in battery-backed systems. |
| RJA | 130 K/W - Thermal resistance from junction to ambient; used to calculate junction temperature rise (ΔT = Pd × RJA) under real mounting conditions. |
| Cj @ VR=4V, f=1MHz | 110 pF - Junction capacitance at low reverse bias; affects high-frequency switching noise and EMI filter design in SMPS outputs. |
Pinout & Package
Two-terminal device in MELF (Metal Electrode Leadless Face) glass package: cylindrical body with solderable axial terminals. Cathode identified by single black band. No internal leads or substrate pads - terminals are metallized ends of the semiconductor die assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to lower-potential side (e.g., ground or return path) in rectification; must handle full load current and surge peaks up to 25A. |
| Cathode | Forward current exit point / reverse-blocking terminal | Marked with black band; connected to higher-potential rail (e.g., input or output node); sustains up to 20V reverse bias during off-state. |
Key Features
| Feature | Design Value |
|---|---|
| Low forward voltage drop | 0.45 V at 1.0A - Reduces power dissipation by ~40% vs. comparable silicon rectifiers, lowering heatsink requirements in compact converters. |
| Guard ring structure | Edge termination that suppresses premature avalanche at junction periphery - improves reliability under voltage transients and line surges. |
| MELF glass package | Hermetically sealed, lead-free, RoHS-compliant construction - enables stable parametric performance across humidity, temperature, and long-term storage without degradation. |
| High surge current rating | 25A IFSM (8.3ms half-sine) - Withstands inrush currents from bulk capacitors and short-duration overloads without failure. |
Applications
| DC/DC Converter Output Rectification | Reverse Polarity Protection |
|---|---|
Use Scenario: Used as secondary-side rectifier in 5–12V buck converters powering FPGA I/O banks or microcontroller peripherals. IC Role / Device Role / Timing Role: Unidirectional current valve converting switched AC-like waveform into regulated DC; no timing function. Use Value: 0.45V VF minimizes conduction loss at 1A load, improving efficiency by ≥1.5% over 1N4007-based designs and reducing thermal stress on PCB traces. | Use Scenario: Placed in series with VCC input of industrial sensor nodes powered by 9–24V external supplies subject to field wiring errors. IC Role / Device Role / Timing Role: Series blocking element preventing damage when supply polarity is reversed; operates in forward conduction only during fault condition. Use Value: Low 0.45V forward drop ensures <5% voltage loss during normal operation, preserving headroom for LDOs or regulators downstream. |
| OR-ing Diode in Dual-Supply Systems | Clamp Diode in Flyback Snubber Circuits |
Use Scenario: Employed in redundant 12V power rails where two supplies feed a common bus via independent diodes to prevent backfeed. IC Role / Device Role / Timing Role: Passive OR-ing element ensuring current flows only from higher-voltage source; no control logic or timing involvement. Use Value: 1.0A continuous rating supports parallel 12V/1A modules; low VF avoids significant voltage mismatch between sources during load sharing. | Use Scenario: Connected across primary-side snubber RC network in 5–20W flyback adapters to clamp voltage spikes during MOSFET turn-off. IC Role / Device Role / Timing Role: Transient voltage clamp absorbing inductive kick energy; conducts only during nanosecond-scale spike events. Use Value: 25A IFSM rating handles repeated 10–15A spike currents without degradation; 130 K/W RJA prevents thermal runaway during burst-mode operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SB120-E3/54 (Vishay) | Same 20V VRRM and 1.0A IO, but TO-277 package (flat lead) instead of MELF; VF = 0.52V @ 1A. | TO-277 allows manual rework and visual inspection; less suitable for high-reliability hermetic environments. | Select when board-level repairability or wave solder compatibility is prioritized over moisture resistance. |
| SS12 (ON Semiconductor) | SMA package (plastic), 20V VRRM, 1.0A IO, VF = 0.5V @ 1A; RJA = 150 K/W - 15% higher thermal resistance than MELF. | Lower cost and wider availability, but reduced thermal performance and no hermetic seal. | Select for cost-sensitive consumer applications where ambient temperature stays below 70°C and humidity exposure is controlled. |
Compared with SB120-E3/54 and SS12, the 1N5817M-13 offers superior thermal stability and hermetic reliability due to its MELF glass construction, making it preferred for automotive under-hood modules, industrial sensors, and medical power supplies where long-term parameter drift must be minimized.
Availability
1N5817M-13 is available at Aetrix Electronics and suitable for DC/DC converter output rectification, reverse polarity protection, OR-ing diode implementation, and flyback snubber clamping requiring stable component supply and consistent low-VF performance across temperature.
Supply support for 1N5817M-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in California and operating wafer fabs and assembly facilities across Asia.
The 1N5817M-13 belongs to Diodes' high-reliability MELF Schottky rectifier product line, engineered for applications demanding stable electrical parameters, low leakage, and resistance to environmental stress in harsh operating conditions.
FAQ
What is the maximum junction temperature for continuous operation?
The 1N5817M-13 has a maximum junction temperature of +125°C. This limit applies under steady-state conditions with proper thermal management. Derating begins at terminal temperatures above 90°C, as shown in Figure 1 of the datasheet - at 125°C ambient, the device supports only ~0.45A average forward current due to thermal constraints.
Is the 1N5817M-13 compatible with lead-free reflow soldering profiles?
Yes - the MELF glass package and metallization are qualified for standard IPC/JEDEC J-STD-020D lead-free reflow profiles, including peak temperatures up to 260°C for 30 seconds. The glass body remains dimensionally stable and does not crack or delaminate under these conditions.
How does the guard ring affect transient survivability?
The integrated guard ring redistributes electric field intensity away from the junction periphery, raising the effective breakdown voltage during fast transients (e.g., ISO 7637-2 pulse 1/2a). This allows the diode to withstand 30–40V spikes for microseconds without avalanche-induced degradation, unlike non-guarded Schottky devices.
Can this diode replace a 1N4001 in a low-frequency rectifier?
No - while both conduct 1A average current, the 1N5817M-13 is a Schottky device with no minority-carrier storage, making it unsuitable for 50/60Hz transformer-rectifier applications where reverse recovery behavior is irrelevant. Its 20V VRRM also limits use to low-voltage systems, unlike the 50V-rated 1N4001.
1N5817M-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- DO-213AB, MELF (Glass)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 20 V
- Current - Average Rectified (Io):
- 1A
- Voltage - Forward (Vf) (Max) @ If:
- 450 mV @ 1 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 1 mA @ 20 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- MELF
- Operating Temperature - Junction:
- -60°C ~ 125°C
1N5817M-13 FAQ
1.How can I place an order for 1N5817M-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5817M-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5817M-13 reliable?
The price and inventory of 1N5817M-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5817M-13 is usually 5 days.
3.What payment methods are accepted for 1N5817M-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5817M-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5817M-13?
1N5817M-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5817M-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5817M-13?
For technical support, including 1N5817M-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5817M-13 requirements.
6.How does Aetrix verify that 1N5817M-13 is sourced from the original manufacturer or authorized distributors?
All 1N5817M-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5817M-13 meets industry standards.
7.What is the process for return or replacement of 1N5817M-13?
All 1N5817M-13 units undergo pre-shipment inspection (PSI). If there is an issue with 1N5817M-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5817M-13 part is unused and in its original packaging.
Return procedure for 1N5817M-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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