Diodes Incorporated 1N5818M-13

Overview

1N5818M-13 from Diodes Incorporated is a surface-mount Schottky barrier rectifier in MELF glass package, rated for 1.0A average forward current, 30V peak repetitive reverse voltage, and 0.55V max forward voltage at 1.0A. It delivers low conduction loss and fast switching in DC/DC converters, reverse polarity protection circuits, and low-voltage power supplies.

For engineers reviewing the 1N5818M-13 datasheet, 1N5818M-13 pinout, 1N5818M-13 application, or 1N5818M-13 equivalent, key selection criteria include forward voltage drop at rated current, thermal resistance (130 K/W), reverse leakage at 100°C (10 mA), junction capacitance (110 pF), and MELF package compatibility with reflow soldering.

Technical Context

This Schottky rectifier uses a metal–semiconductor junction to achieve lower forward voltage and faster recovery than PN-junction diodes. Its guard ring structure enhances transient voltage immunity, and the hermetically sealed glass MELF package ensures high reliability in harsh environments.

Designed for surface-mount assembly, it operates across –60°C to +125°C with a maximum junction-to-ambient thermal resistance of 130 K/W under standard PCB mounting conditions. The device sustains non-repetitive surge currents up to 25 A (8.3 ms half-sine) without degradation.

Key Specifications

Pinout & Package

Package: MELF (Metal Electrode Leadless Face), glass body with axial solderable terminals per MIL-STD-202 Method 208; cathode identified by single band; dimensions A = 4.80–5.20 mm, B = 2.40–2.60 mm, C = 0.55 mm nominal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with SB130-TB and SS13-E3/5AT, the 1N5818M-13 provides superior high-temperature leakage performance (10 mA @ 100°C vs. 5 mA for SS13-E3/5AT) and hermetic sealing critical for long-life outdoor deployments, though its MELF form factor demands precise reflow profiling.

Availability

1N5818M-13 is available at Aetrix Electronics and suitable for DC/DC converter output rectification, reverse polarity protection, solar charge controllers, and low-voltage LED driver supplies requiring stable component supply across extended temperature ranges and high-reliability manufacturing.

Supply support for 1N5818M-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and Europe.

The 1N581xM series belongs to Diodes' high-reliability Schottky rectifier product line, engineered specifically for surface-mount power conversion and protection in automotive, industrial, and renewable energy systems where thermal stability and transient immunity are critical.

FAQ

What is the maximum junction temperature for continuous operation?

The 1N5818M-13 has a storage and operating junction temperature range of –60°C to +125°C. For continuous operation at full 1.0A average forward current, terminal temperature must not exceed 90°C per derating curve (Fig. 1), ensuring junction stays within safe limits given R_JA = 130 K/W and typical PCB thermal paths.

Is the MELF package compatible with standard reflow soldering profiles?

Yes - the MELF package terminals are solderable per MIL-STD-202, Method 208, and the glass body withstands peak reflow temperatures up to 260°C for 10 seconds. Diodes Incorporated specifies compatibility with IPC-J-STD-020 Level 1 moisture sensitivity, requiring no pre-bake prior to reflow.

How does the guard ring improve transient performance?

The integrated guard ring structure surrounds the active Schottky junction to distribute electric field stress during voltage transients, raising the effective breakdown threshold and reducing susceptibility to ESD-induced failure. This allows the device to survive 25A surge events without external clamping components in many applications.

Can 1N5818M-13 replace 1N5817M or 1N5819M in existing designs?

Yes, with voltage rating verification: 1N5818M-13 (30V VRRM) sits between 1N5817M (20V) and 1N5819M (40V). Substitution is acceptable if system reverse voltage remains ≤30V; forward voltage and thermal characteristics are nearly identical across the series, enabling drop-in use where voltage margin permits.