Diodes Incorporated 1N5819HW-7

Overview

1N5819HW-7 from Diodes Incorporated is a surface-mount Schottky barrier rectifier optimized for low-voltage, high-frequency rectification with 40 V peak reverse voltage, 1.0 A average forward current, 450 mV max forward voltage at 1.0 A, 50 µA max reverse leakage at 40 V/25°C, and SOD123 package. It serves as a primary freewheeling diode in DC-DC converters and polarity protection element in 5 V/12 V power rails.

For engineers reviewing the 1N5819HW-7 datasheet, 1N5819HW-7 pinout, 1N5819HW-7 application, or 1N5819HW-7 equivalent, key selection criteria include forward voltage drop at rated current, thermal resistance (225 °C/W), surge capability (25 A IFSM), reverse leakage stability over temperature, and SOD123 footprint compatibility with automated assembly.

Technical Context

This Schottky rectifier uses guard ring die construction to suppress edge breakdown and improve transient robustness. Its low 0.45 V VF at 1.0 A enables high-efficiency operation in 3–12 V switching supplies where conduction loss dominates thermal design.

Rated for -65°C to +150°C junction temperature, it maintains stable IR below 1.5 µA at 100°C and 40 V reverse bias-critical for automotive body electronics and industrial controllers operating in thermally constrained enclosures.

Key Specifications

Pinout & Package

Package: SOD123 - Surface-mount plastic package (1.55 mm × 2.65 mm × 1.05 mm) with cathode band marking and matte tin-plated alloy 42 leadframe; compliant with IPC-7351B SOIC123 footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with SB140-TB and SS14-E3/5AT, the 1N5819HW-7 delivers the lowest VF in SOD123 while maintaining AEC-Q101-compliant variants (1N5819HWQ), making it optimal for compact, efficiency-critical 5–12 V power stages where footprint and thermal resistance are co-constrained.

Availability

1N5819HW-7 is available at Aetrix Electronics and suitable for DC-DC converter freewheeling, polarity protection, and low-voltage inverter output applications requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for 1N5819HW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

The 1N5819HW belongs to Diodes' general-purpose Schottky rectifier product line, engineered for high-efficiency, low-profile power conversion in consumer, industrial, and automotive subsystems where VF, thermal resistance, and reliability under thermal cycling are critical.

FAQ

What is the maximum junction temperature for continuous operation?

The 1N5819HW-7 has a specified junction temperature range of -65°C to +150°C. For continuous operation at full 1.0 A IO, thermal design must ensure TJ remains ≤150°C-achievable with ≤550 mW dissipation on a 1-inch² copper pad (RθJA = 225 °C/W), limiting ambient temperature to ~125°C at full load.

Is the 1N5819HW-7 suitable for automotive applications?

Yes-the automotive-qualified variant 1N5819HWQ is AEC-Q101 qualified and shares identical electrical specs and SOD123 packaging. While the standard 1N5819HW-7 is not AEC-certified, its -65°C to +150°C rating, guard ring die, and robust surge capability make it widely used in non-safety-critical automotive body electronics with internal qualification.

How does the SOD123 package affect PCB layout and thermal performance?

The SOD123 footprint (1.55 mm × 2.65 mm) supports high-density layouts but limits copper area for heat spreading. To achieve rated 1.0 A current, Diodes specifies a 1-inch² copper pad (2 oz) for thermal testing; reducing pad area increases RθJA proportionally-e.g., 0.25-inch² raises RθJA to ~350 °C/W, derating IO to ~0.7 A at 25°C ambient.

What is the typical reverse recovery behavior of this Schottky rectifier?

As a Schottky barrier device, the 1N5819HW-7 exhibits no minority-carrier storage and therefore has effectively zero reverse recovery time (trr) and negligible reverse recovery charge (Qrr). This eliminates switching losses and associated EMI in high-frequency (>50 kHz) applications-confirmed by absence of Qrr specification in the datasheet and measured CT = 50–60 pF at 4 V reverse bias.