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Microchip Technology 1N5820USE3/TR
- Part No.:
- 1N5820USE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
1N5820USE3/TR.pdf
- Description:
- SMALL-SIGNAL SCHOTTKY
- Quantity:
- Payment:
- Shipping:
Inventory:135
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Product details
Overview
1N5820USE3/TR from Microsemi is a 3 A axial-leaded Schottky barrier rectifier in hermetically sealed "B" glass package, rated for 20 V peak reverse voltage, with maximum forward voltage of 0.40 V at 1 A and 0.50 V at 3 A, operating from –65 °C to +125 °C junction temperature - used in low-loss DC power supplies and switching regulator outputs.
For engineers reviewing the 1N5820USE3/TR datasheet, 1N5820USE3/TR pinout, 1N5820USE3/TR application, or 1N5820USE3/TR equivalent, this part delivers fast recovery, low forward drop, and MIL-PRF-19500/620-compliant reliability in through-hole power conversion designs requiring stable thermal performance and ESD insensitivity.
Technical Context
This Schottky rectifier uses metallurgically bonded tungsten slugs and double-plug construction inside a voidless hard-glass case, enabling high surge current tolerance (80 A, 8.3 ms half-sine) and low thermal resistance (30 °C/W junction-to-lead at 9.52 mm lead length). Its RoHS-compliant matte tin plating over nickel/copper terminals supports lead-free assembly while maintaining hermetic seal integrity.
The device exhibits minimal reverse leakage (0.10 mA at 20 V, 25 °C), with temperature-dependent IR rising to 12.5 mA at 100 °C - a key design factor for high-temperature power stage stability. Its VF–IF curve shows near-linear conduction up to 9.4 A, confirming suitability for transient-heavy output rectification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Reverse Voltage (VRWM) | 20 V - defines maximum continuous reverse bias before significant leakage or breakdown in DC output filtering. |
| Forward Voltage (VF) @ 1 A | 0.40 V - enables <1.2 W conduction loss at 3 A average current, critical for efficiency in 5–12 V SMPS outputs. |
| Forward Voltage (VF) @ 3 A | 0.50 V - confirms low-voltage drop under full rated load, reducing thermal stress on PCB traces and heatsinking. |
| Average Output Current (IO) | 3 A @ TL = +55 °C - specifies usable DC current with 3/8″ lead length, derating to zero above +125 °C junction. |
| Surge Current (IFSM) | 80 A (8.3 ms half-sine) - withstands inrush and fault transients in unregulated input stages without failure. |
| Junction Temperature Range | –65 °C to +125 °C - supports operation in aerospace, industrial, and military environments with wide ambient swings. |
| Thermal Resistance (RθJL) | 30 °C/W - allows direct thermal modeling from junction to PCB lead, essential for thermal pad layout and reliability prediction. |
Pinout & Package
Hermetically sealed axial "B" package (glass body with tungsten slugs), blue-coated body, cathode indicated by band, weight ≈750 mg. Leads are tin/lead or RoHS-compliant matte tin over nickel/copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (unbanded end) | Input current entry point | Connects to transformer secondary or switch-node output; must handle full surge and RMS current without overheating. |
| Cathode (banded end) | Output current exit point | Routes rectified DC to filter capacitor; polarity marking ensures correct orientation in high-reliability layouts. |
Key Features
| Feature | Design Value |
|---|---|
| Hermetic glass sealing | Prevents moisture ingress and long-term parameter drift in humid or high-vacuum environments (e.g., avionics). |
| Metallurgically bonded construction | Ensures robust thermal and mechanical interface between die and slug, sustaining repeated thermal cycling. |
| Double plug design | Improves bond strength and current distribution across leads, supporting 80 A surge without interfacial failure. |
| ESD insensitivity (MIL-STD-750 Method 1020) | Eliminates need for handling precautions during manual assembly or rework in production lines. |
| RoHS-compliant (e3 suffix) | Meets EU Directive 2011/65/EU for lead-free soldering compatibility without compromising hermeticity. |
Applications
| DC Power Supply Output Rectification | Switching Regulator Freewheel Diode |
|---|---|
Use Scenario: Rectifying secondary-side AC from center-tapped or bridge-configured transformers in offline or isolated DC–DC converters. IC Role / Device Role / Timing Role: Schottky rectifier providing unidirectional conduction path with minimal forward loss and no minority-carrier storage delay. Use Value: 0.40 V VF at 1 A reduces conduction losses by ~40% vs. standard PN diodes, directly improving system efficiency and thermal margin. | Use Scenario: Providing freewheeling path for inductive energy return in buck, boost, and flyback topologies. IC Role / Device Role / Timing Role: Fast-recovery Schottky diode clamping inductor current during MOSFET off-time, minimizing voltage spikes and EMI. Use Value: Zero reverse recovery charge (Qrr ≈ 0) prevents shoot-through risk and eliminates recovery-related switching losses in high-frequency (>100 kHz) regulators. |
| High-Reliability Military Power Modules | Industrial Motor Drive Auxiliary Supplies |
Use Scenario: Input/output rectification in MIL-PRF-19500/620-qualified power modules deployed in airborne or ground vehicle systems. IC Role / Device Role / Timing Role: Hermetically sealed, JAN-qualified rectifier ensuring long-term parametric stability under vibration, thermal shock, and radiation exposure. Use Value: –65 °C to +125 °C operation and 80 A surge rating support mission-critical uptime in harsh-field deployments. | Use Scenario: Generating auxiliary 5 V or 12 V rails from main DC bus for gate drivers, sensors, and control logic in motor inverters. IC Role / Device Role / Timing Role: Low-VF Schottky rectifier delivering clean, low-noise bias voltage with minimal heat generation near sensitive analog circuitry. Use Value: 30 °C/W RθJL enables direct lead-mount thermal transfer to copper pours, eliminating need for discrete heatsinks in space-constrained enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Vishay VS-3EWH02-M3/45 | Same 20 V VRWM and 3 A IO rating, but surface-mount DO-214AB package; VF = 0.45 V @ 3 A. | Requires SMT reflow process and PCB redesign; unsuitable for through-hole legacy boards. | Select when board space is constrained and automated assembly is available. |
| ON Semiconductor SB320-E3/54 | 20 V VRWM, 3 A IO, VF = 0.52 V @ 3 A; epoxy-encapsulated, not hermetically sealed. | Lacks MIL-PRF-19500 qualification and hermetic reliability; limited to commercial-grade industrial use. | Select for cost-sensitive commercial applications where long-term humidity resistance is non-critical. |
Compared with VS-3EWH02-M3/45 and SB320-E3/54, the 1N5820USE3/TR uniquely combines axial through-hole mounting, hermetic glass packaging, MIL-PRF-19500 compliance, and sub-0.5 V forward drop - making it the only option for field-upgradable, high-reliability, through-hole power rectification where environmental resilience is mandatory.
Availability
1N5820USE3/TR is available at Aetrix Electronics and suitable for DC power supply output rectification, switching regulator freewheel diode placement, and high-reliability military power modules requiring stable component supply across extended product lifecycles.
Supply support for 1N5820USE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, emphasizing ruggedized packaging and extended temperature performance.
The 1N5820USE3/TR belongs to Microsemi's legacy axial Schottky rectifier family, engineered specifically for through-hole power conversion in mission-critical systems where hermeticity, surge robustness, and MIL-spec compliance are non-negotiable.
FAQ
What is the maximum junction temperature rating for the 1N5820USE3/TR?
The 1N5820USE3/TR has a specified junction temperature range of –65 °C to +125 °C. This rating is validated per MIL-PRF-19500/620 and confirmed in the T4-LDS-0303 datasheet. Operation beyond +125 °C risks irreversible degradation of the Schottky junction and hermetic seal integrity. Derating curves in Figures 3 and 4 define safe current limits at elevated temperatures, with zero-rated current at +125 °C junction.
Is the 1N5820USE3/TR RoHS compliant, and what does the 'e3' suffix indicate?
Yes, the 1N5820USE3/TR is RoHS compliant, as confirmed by the 'e3' suffix in its part number per Microsemi's nomenclature guide. The 'e3' denotes matte tin plating over nickel/copper terminals, meeting EU Directive 2011/65/EU. This applies only to commercial-grade versions - JAN-level variants do not offer RoHS compliance. The hermetic glass package remains fully compatible with lead-free reflow profiles.
Does the 1N5820USE3/TR have a specified reverse recovery time (trr)?
No, the 1N5820USE3/TR does not specify reverse recovery time because it is a Schottky barrier diode with majority-carrier conduction. Unlike PN junction diodes, it exhibits negligible reverse recovery charge (Qrr ≈ 0) and no stored minority carriers - resulting in effectively instantaneous turn-off. This is confirmed by the absence of trr in all electrical characteristics tables and graphs in the T4-LDS-0303 datasheet.
What is the thermal resistance junction-to-lead (RθJL) for the 1N5820USE3/TR, and how is it measured?
The 1N5820USE3/TR has a thermal resistance of 30 °C/W junction-to-lead, measured at a lead length of 0.375 inch (9.52 mm) per MIL-STD-750 Method 1071. This value reflects heat flow from the silicon die through the tungsten slug and axial leads to ambient via conduction - not convection or radiation. It enables accurate thermal modeling when leads are soldered to large copper areas, as shown in Figure 7's FR4 pad-area correlation.
Can the 1N5820USE3/TR be used as a direct replacement for the 1N5822 or 1N5821 in existing designs?
No - the 1N5820USE3/TR is not a direct replacement for the 1N5822 or 1N5821 due to its lower 20 V peak reverse voltage rating versus their 40 V and 30 V ratings. Substituting it in circuits exposed to >20 V reverse bias risks catastrophic breakdown. While forward characteristics (VF, IO, IFSM) are nearly identical, VRWM is a hard design limit; replacement requires verification of worst-case reverse voltage transients and derating margins in the target application.
1N5820USE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, B
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 20 V
- Current - Average Rectified (Io):
- 3A
- Voltage - Forward (Vf) (Max) @ If:
- 500 mV @ 3 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 100 µA @ 20 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
- Operating Temperature - Junction:
- -65°C ~ 125°C
1N5820USE3/TR FAQ
1.How can I place an order for 1N5820USE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5820USE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5820USE3/TR reliable?
The price and inventory of 1N5820USE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5820USE3/TR is usually 5 days.
3.What payment methods are accepted for 1N5820USE3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5820USE3/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5820USE3/TR?
1N5820USE3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5820USE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5820USE3/TR?
For technical support, including 1N5820USE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5820USE3/TR requirements.
6.How does Aetrix verify that 1N5820USE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N5820USE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5820USE3/TR meets industry standards.
7.What is the process for return or replacement of 1N5820USE3/TR?
All 1N5820USE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N5820USE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5820USE3/TR part is unused and in its original packaging.
Return procedure for 1N5820USE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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