STMicroelectronics 1N5822

Overview

1N5822 from STMicroelectronics is a 40 V, 3 A axial-leaded Schottky rectifier in DO-201AD package, optimized for low forward voltage drop (0.525 V at 3 A, 25°C) and negligible switching losses. It serves as a freewheeling or polarity protection diode in DC-DC converters, SMPS secondary-side rectification, and small battery chargers.

For engineers reviewing the 1N5822 datasheet, 1N5822 pinout, 1N5822 application, or 1N5822 equivalent, key selection criteria include its 40 V reverse blocking rating, 80 A surge capability, 150°C junction temperature limit, and thermal resistance of 80°C/W (junction-to-ambient), critical for high-frequency, low-voltage power conversion designs.

Technical Context

The 1N5822 operates as a unidirectional, low-loss power rectifier with no minority-carrier storage delay-enabling extremely fast switching essential for >100 kHz DC-DC topologies. Its Schottky barrier construction eliminates reverse recovery time and associated switching losses.

It features specified avalanche capability (1700 W peak, 1 µs pulse), enabling robust transient energy handling without external snubbers. Thermal design is constrained by R_th(j-a) = 80°C/W (lead length = 10 mm), requiring careful PCB copper area planning for sustained 3 A operation.

Key Specifications

Pinout & Package

DO-201AD axial package with cathode identified by a ring near one lead end. Leads are tinned copper-clad steel, 1.30 mm diameter, 25.4 mm overall length, 9.5 mm body length. Mounting requires ≥15 mm straight axial section before bending.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with SB340 and SS34, the 1N5822 offers superior surge robustness (80 A vs. ≤75 A) and lower thermal resistance (80°C/W), making it preferable for space-constrained, high-reliability 3 A DC-DC outputs where transient stress and thermal headroom are critical.

Availability

1N5822 is available at Aetrix Electronics and suitable for switch-mode power supplies, DC-DC converters, and battery charging circuits requiring stable component supply, long-term manufacturability, and consistent parametric performance across production lots.

Supply support for 1N5822 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

The 1N582x series belongs to ST's legacy power discrete portfolio, engineered specifically for high-efficiency, high-frequency AC/DC and DC/DC conversion where low forward voltage and fast switching are mandatory.

FAQ

Is the 1N5822 suitable for synchronous rectification replacement?

No-the 1N5822 is a passive Schottky diode and cannot replace a synchronous rectifier MOSFET. It lacks gate control, so it cannot be actively turned off to eliminate reverse conduction. It serves only as a self-commutating rectifier in topologies where body diode conduction or timing constraints preclude MOSFET use.

What is the maximum PCB copper area needed for continuous 3 A operation at 60°C ambient?

Per Fig. 5-2 and R_th(j-a) = 80°C/W, maintaining T_j ≤ 125°C requires ΔT ≤ 65°C. At 3 A and V_F ≈ 0.55 V, power dissipation is ~1.65 W. Thus, required R_th ≤ 39°C/W - achievable with ≥3.5 cm² of 2-oz copper connected to both leads via thermal vias.

Does the 1N5822 have a specified reverse recovery time (t_rr)?

No-Schottky diodes like the 1N5822 exhibit majority-carrier conduction and have no reverse recovery time. The datasheet confirms "negligible switching losses" and omits t_rr; instead, it specifies dV/dt immunity (10,000 V/µs) as the relevant high-speed performance metric.

Can the 1N5822 be used in place of the 1N5821 in an existing design?

Yes-with caveats. Both share DO-201AD package and 3 A rating, but the 1N5822 has higher V_RRM (40 V vs. 30 V) and slightly higher V_F (0.525 V vs. 0.5 V at 3 A). It is a direct upgrade where reverse voltage margin matters, but verify layout thermal margins due to +5% conduction loss increase.