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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

STMicroelectronics 1N5822UB1

Name: 1N5822UB1
Brand: STMicroelectronics
SKU: 1N5822UB1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 1N5822UB1

Manufacturer:: STMicroelectronics

Category:: Single Diodes

Package:: 2-SMD, No Lead

Datasheet:: 1N5822UB1.pdf

Description:: AEROSPACE 40 V 3 A POWER SCHOTTK

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Inventory:9,687

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Product details

Overview

1N5822UB1 from STMicroelectronics is an ESCC-qualified 40 V, 3 A aerospace-grade Schottky diode in a hermetic LCC-2B ceramic surface-mount package. It delivers ultra-low forward voltage (0.485 V at 3 A, +25 °C), radiation hardness up to 3 Mrad(Si) (HDR) and 150 krad(Si) (LDR), and operates reliably up to 150 °C junction temperature. It serves as secondary rectifier in 5 V flyback converters, OR-ing diode in satellite power redundancy, and free-wheeling diode in DC motor choppers.

For engineers reviewing the 1N5822UB1 datasheet, 1N5822UB1 pinout, 1N5822UB1 application, or 1N5822UB1 equivalent, key selection criteria include radiation tolerance certification (ESCC 5106/020), low conduction loss at high ambient temperatures, hermetic LCC-2B package compatibility with D5B footprint, and validated performance under reverse polarity protection and OR-ing configurations.

Technical Context

This diode employs full planar Schottky technology on a radiation-hardened silicon die, enabling stable operation under extreme TID exposure without parameter drift. Its thermal design leverages high-conductivity materials and a low R_th(j-c) of 7 °C/W for efficient heat transfer from junction to case.

The LCC-2B package features gold-plated terminations, a floating metallic lid, and anode identification via internal metalization and index mark - critical for traceable assembly in space-grade manufacturing. Electrical behavior is characterized by negligible reverse recovery time and capacitance (240 pF at 5 V), supporting high-frequency switching up to several MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	40 V - Maximum repetitive reverse blocking voltage; defines safe operating margin in 5 V output rectification circuits.
I_F(AV)	3 A - Average forward current at T_C ≥ 139 °C and duty cycle δ = 0.5; supports continuous operation in compact, thermally constrained spacecraft SMPS.
V_F (max)	0.485 V at I_F = 3 A, +25 °C - Enables <0.5 V conduction drop; reduces power loss to ~1.5 W at 3 A, critical for thermal management in sealed modules.
T_j(max)	150 °C - Maximum junction temperature; allows operation in uncooled satellite bays where ambient exceeds 125 °C.
R_th(j-c)	7 °C/W - Junction-to-case thermal resistance; enables direct mounting to aluminum chassis for passive cooling without heatsinks.
C_j	240 pF at V_R = 5 V, 1 MHz - Low junction capacitance minimizes switching losses and EMI in >100 kHz DC-DC converters.
IR (max)	12 mA at T_j = 100 °C, V_R = 40 V - Confirmed leakage under hot reverse bias; ensures stability in OR-ing and reverse polarity protection.

Pinout & Package

The 1N5822UB1 is housed in a hermetically sealed LCC-2B (leadless chip carrier, 2-terminal) ceramic package with gold-plated terminations. Footprint is fully compatible with industry-standard D5B outline. Anode is identified by internal metalization at two top internal corners and an index mark; cathode is Pin 2.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Anode	Connected to input/source side in rectification; must be routed with low-inductance path to minimize voltage overshoot during switching.
Pin 2	Cathode	Output/load side connection; polarity-sensitive for reverse polarity protection and OR-ing functionality.

Key Features

Feature	Design Value
ESCC qualification per 5106/020	Validated for flight use in European Space Agency programs; includes full radiation test reports, lot traceability, and conformance documentation.
Ultra-low V_F (0.485 V @ 3 A)	Reduces conduction loss by >40% vs. standard silicon diodes; enables higher efficiency in low-voltage (<5 V), high-current satellite power rails.
Hermetic LCC-2B packaging	Prevents moisture ingress and outgassing in vacuum; eliminates risk of corrosion or parametric shift over 15+ year mission lifetimes.
Radiation hardness	3 Mrad(Si) HDR and 150 krad(Si) LDR tolerance confirmed per ESCC 22900; no functional degradation observed post-irradiation testing.
150 °C maximum junction temperature	Supports operation in unheated satellite compartments; eliminates need for active thermal regulation in many LEO/MEO missions.

Applications

Satellite Power Rectification

Redundancy OR-ing

Use Scenario: Secondary-side rectification in 5 V flyback converters powering onboard avionics and payload subsystems.

IC Role / Device Role / Timing Role: Schottky rectifier handling continuous 3 A DC output with minimal voltage drop and zero reverse recovery loss.

Use Value: Enables >92% converter efficiency at full load while maintaining thermal safety margin below 150 °C junction limit.

Use Scenario: Diode-OR configuration combining outputs from dual independent power supplies in fault-tolerant spacecraft buses.

IC Role / Device Role / Timing Role: Unidirectional current gate ensuring seamless switchover during supply failure without voltage sag or backfeed.

Use Value: Prevents single-point failure; validated radiation immunity ensures uninterrupted operation during solar particle events.

DC Motor Free-Wheeling

Reverse Polarity Protection

Use Scenario: Freewheeling path for inductive kickback in brushed DC motor drivers used in antenna pointing mechanisms.

IC Role / Device Role / Timing Role: Fast-switching path clamping inductive voltage spikes during PWM turn-off.

Use Value: Eliminates need for snubbers; 240 pF capacitance and sub-ns recovery prevent oscillatory ringing in 20–50 kHz chopper drives.

Use Scenario: Input protection for sensitive power management ICs in launch vehicle telemetry modules exposed to field-reverse wiring errors.

IC Role / Device Role / Timing Role: Series-blocking diode preventing damage when external power source is connected with inverted polarity.

Use Value: Withstands 40 V reverse bias indefinitely; gold-plated LCC-2B terminations ensure solder joint integrity after thermal cycling in cryogenic environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
1N5822U01B	Same die and LCC-2B package, but ESCC flight model qualified per 5106/020/01 with full serialization and wafer-level traceability.	Required for flight hardware; not suitable for engineering prototypes due to extended qualification lead time and cost.	Select when full ESCC flight certification and ESA documentation (e.g., serial numbers, wafer ID) are mandatory.
SM5822S	Commercial-grade 40 V/3 A Schottky in SOD-123FL; no radiation qualification, max T_j = 125 °C, R_th(j-a) ≈ 120 °C/W.	Limited to ground-test equipment and non-flight subsystems; unsuitable for orbit due to TID vulnerability and thermal derating.	Use only for lab validation or cost-sensitive terrestrial prototypes where radiation and hermeticity are irrelevant.

Compared with 1N5822UB1, the 1N5822U01B offers full flight certification and traceability at higher cost and longer lead time, while the SM5822S sacrifices radiation hardness, thermal capability, and hermeticity for lower price and wider commercial availability.

Availability

1N5822UB1 is available at Aetrix Electronics and suitable for satellite power rectification, spacecraft redundancy OR-ing, and radiation-hardened DC motor control requiring stable component supply across long-duration procurement cycles.

Supply support for 1N5822UB1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, with design, manufacturing, and R&D facilities across Europe, Asia, and the Americas.

The 1N5822UB1 belongs to ST's Rad-Hard Power Discretes product line, engineered specifically for high-reliability space applications demanding radiation tolerance, hermetic packaging, and extended temperature operation.

FAQ

Is the 1N5822UB1 pin-compatible with standard D5B footprint designs?

Yes - the LCC-2B package has identical mechanical dimensions and pad layout to the industry-standard D5B outline. Pin 1 (anode) and Pin 2 (cathode) align precisely with D5B land patterns, enabling drop-in replacement in existing space-grade PCB layouts without redesign.

What is the difference between 1N5822UB1 and 1N5822U01B?

The 1N5822UB1 is an engineering model with ESCC qualification documentation and gold plating, intended for prototype and qualification testing. The 1N5822U01B is the flight model with full ESCC 5106/020/01 certification, serialized units, wafer-level traceability, and extended radiation test reporting required for orbital deployment.

Can the metallic lid of the LCC-2B package be grounded?

Yes - the metallic lid is electrically floating and not internally connected to either terminal. Grounding it does not alter electrical characteristics and may improve EMI shielding in high-frequency converter layouts, provided mechanical stress on the ceramic body is avoided during mounting.

Does the 1N5822UB1 require derating for operation at 100 °C ambient temperature?

Yes - at T_A = 100 °C with R_th(j-a) = 120 °C/W (typical on PCB), maximum I_F(AV) drops to ~1.8 A to maintain T_j ≤ 150 °C. Derating curves in Figure 3 of DS6396 confirm this; forced convection or copper pour improves margin.

1N5822UB1 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: 2-SMD, No Lead

Packaging:: Tray

Product Status:: Active

Technology:: Schottky

Voltage - DC Reverse (Vr) (Max):: 40 V

Current - Average Rectified (Io):: 3A

Voltage - Forward (Vf) (Max) @ If:: 485 mV @ 3 A

Speed:: Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr):: -

Current - Reverse Leakage @ Vr:: 80 µA @ 40 V

Capacitance @ Vr, F:: 240pF @ 5V, 1MHz

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 2-LCCB

Operating Temperature - Junction:: 150°C

1N5822UB1 FAQ

1.How can I place an order for 1N5822UB1 through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N5822UB1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N5822UB1 reliable?

The price and inventory of 1N5822UB1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5822UB1 is usually 5 days.

3.What payment methods are accepted for 1N5822UB1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5822UB1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N5822UB1?

1N5822UB1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N5822UB1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N5822UB1?

For technical support, including 1N5822UB1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5822UB1 requirements.

6.How does Aetrix verify that 1N5822UB1 is sourced from the original manufacturer or authorized distributors?

All 1N5822UB1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5822UB1 meets industry standards.

7.What is the process for return or replacement of 1N5822UB1?

All 1N5822UB1 units undergo pre-shipment inspection (PSI). If there is an issue with 1N5822UB1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N5822UB1 part is unused and in its original packaging.

Return procedure for 1N5822UB1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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