Microchip Technology 1N6073US

Overview

1N6073US from Microsemi is a voidless hermetically sealed surface-mount ultrafast recovery glass power rectifier diode rated for 50 V working peak reverse voltage, 3.0 A average forward current at T_EC = 70°C, and 30 ns reverse recovery time. It features a tungsten slug in hard glass construction with copper end caps, designed for high-reliability military and aerospace power conversion where failure tolerance is critical.

For engineers reviewing the 1N6073US datasheet, 1N6073US pinout, 1N6073US application, or 1N6073US equivalent, this part delivers verified ultrafast switching (30 ns trr), low thermal resistance (13°C/W), and MIL-qualified screening options - key selection criteria for radiation-hardened, high-surge-current DC/DC and EMI-sensitive SMPS designs.

Technical Context

This device operates as a unidirectional power rectifier with controlled avalanche capability and inherent radiation hardness per MicroNote 050. Its voidless glass package ensures hermeticity and long-term reliability under thermal cycling and high-humidity environments.

The 1N6073US uses a Category I metallurgical bond and triple-layer passivation to sustain 35 A peak forward surge current (8.3 ms half-sine) and 1.0 µA reverse leakage at 50 V, enabling robust operation in transient-heavy industrial power supplies.

Key Specifications

Pinout & Package

Package: Hermetically sealed voidless hard glass "Package A" (D-5A), with tungsten slugs and copper end caps. Cathode indicated by band. No marking. Tape-and-reel compliant per EIA-481-B.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Compared with 1N6073 and SS34, the 1N6073US uniquely combines hermetic SMT packaging, 50 V VRWM, controlled avalanche, and radiation hardness - making it irreplaceable in space-qualified or mission-critical 28–48 V power systems where long-term reliability outweighs forward-voltage optimization.

Availability

1N6073US is available at Aetrix Electronics and suitable for aerospace power distribution, military DC/DC converters, radiation-hardened instrumentation, and high-reliability industrial SMPS requiring stable component supply across extended product lifecycles.

Supply support for 1N6073US includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-tolerant, and defense-grade analog and power components.

The 1N6073US belongs to Microsemi's voidless-glass ultrafast rectifier family, engineered specifically for MIL-PRF-19500 qualified applications demanding zero defect rates, extreme thermal resilience, and guaranteed parametric stability over 20+ years.

FAQ

What is the maximum junction temperature rating for the 1N6073US?

The 1N6073US has a specified junction temperature range of −65°C to +155°C. This wide operating envelope supports deployment in extreme environments such as spacecraft thermal vacuum chambers and engine-mounted avionics. The 1N6073US achieves this rating through its voidless hermetic glass package and Category I metallurgical bond, which prevent thermal-induced delamination or leakage drift across the full range.

Does the 1N6073US have a cathode band marking?

Yes, the 1N6073US uses a visible cathode band on the glass body to indicate polarity. This band aligns with industry-standard MELF-style orientation and is essential for correct placement in full-wave bridge or flyback snubber circuits. Unlike some plastic-packaged diodes, the 1N6073US does not include alphanumeric marking - polarity identification relies solely on the band.

Is the 1N6073US suitable for use in radiation-intensive environments?

Yes, the 1N6073US is inherently radiation-hardened per Microsemi MicroNote 050, with no parameter degradation observed up to 100 krad(Si). Its voidless glass construction and tungsten slug eliminate ionization traps and mitigate total ionizing dose effects. This makes the 1N6073US appropriate for satellite power systems, nuclear instrumentation, and other high-radiation applications where commercial diodes would fail prematurely.

Can the 1N6073US be substituted with the 1N6073 in the same PCB footprint?

No - the 1N6073US (surface-mount D-5A) and 1N6073 (axial-leaded DO-41) have incompatible packages and mounting methods. The 1N6073US requires solder pads per EIA-481-B tape-and-reel layout, while the 1N6073 needs through-holes. Substitution would require full PCB redesign. Electrical parameters match, but mechanical integration does not.

What is the thermal resistance from junction to external case (RθJEC) for the 1N6073US?

The 1N6073US has a thermal resistance of 13°C/W from junction to external case (RθJEC). This value reflects direct conduction through the tungsten slug into the PCB copper pour or heatsink pad. It enables 3.0 A continuous operation at T_EC = 70°C with only 39°C temperature rise above the case - critical for compact, convection-cooled military power modules where heatsinks are impractical.