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Microchip Technology 1N6073US/TR
- Part No.:
- 1N6073US/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N6073US/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:6,509
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Product details
Overview
1N6073US/TR from Microsemi is an ultrafast recovery surface-mount glass power rectifier diode rated for 50 V working peak reverse voltage, 3.0 A average forward current at TEC = 70°C, and 30 ns reverse recovery time. It features voidless hermetic glass packaging with Category I metallurgical bonds and is designed for high-reliability switching power supplies where failure tolerance and surge robustness are critical.
For engineers reviewing the 1N6073US/TR datasheet, 1N6073US/TR pinout, 1N6073US/TR application, or 1N6073US/TR equivalent, this part supports military-grade thermal stability (–65°C to +155°C), low forward voltage (2.04 V @ 9.4 A pulsed), and high surge capability (35 A, 8.3 ms half-sine) in a compact Package A (D-5A) surface-mount configuration.
Technical Context
This device operates as a unidirectional power rectifier with controlled avalanche capability and inherent radiation hardness per MicroNote 050. Its ultrafast trr of 30 ns enables efficient operation in high-frequency DC/DC converters and SMPS topologies requiring minimal reverse recovery loss.
The voidless hermetic glass construction ensures long-term reliability under thermal cycling and harsh environments. Internal tungsten slugs and copper end caps with Sn/Pb finish provide low thermal resistance (13°C/W) and stable solderability at 260°C for 10 s.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 50 V - Maximum continuous reverse voltage before breakdown; defines safe operating range in bridge or flyback circuits. |
| IF(AV) @ TEC=70°C | 3.0 A - Sustained DC output current capability with heatsink contact at emitter-collector reference point. |
| VF @ IF=9.4 A (pulsed) | 2.04 V - Forward conduction loss at high transient load; impacts efficiency and thermal design in peak-current applications. |
| trr | 30 ns - Time to recover blocking state after polarity reversal; enables >1 MHz switching without excessive switching loss. |
| IFSM (8.3 ms) | 35 A - Non-repetitive surge current rating; supports inrush and fault-current handling in industrial power stages. |
| RθJEC | 13°C/W - Junction-to-case thermal resistance; determines required heatsinking for thermal management at full load. |
| Junction Temp Range | –65°C to +155°C - Enables deployment in aerospace, downhole, or extended-temperature military systems. |
Pinout & Package
Package A (D-5A): Hermetically sealed voidless glass case with tungsten slugs and copper end caps (Sn/Pb finish); cathode indicated by band; no marking; tape-and-reel compliant per EIA-481-B.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry | Connected to input/source side in half-wave or full-wave rectification; requires low-inductance layout for fast switching. |
| Cathode | Forward current exit / reverse blocking terminal | Banded end; ties to output/load or ground return; must withstand VRWM and controlled avalanche energy during transients. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal moisture and particle ingress; ensures >20-year operational life in vacuum or high-humidity environments. |
| Category I metallurgical bond | Guarantees mechanical integrity under shock/vibration; meets MIL-PRF-19500 screening requirements when ordered with MQ/MX/MV/SP prefixes. |
| Triple-layer passivation | Prevents surface leakage and corrosion on glass-metal interface; maintains IR ≤ 1.0 μA at VRWM across temperature extremes. |
| Controlled avalanche capability | Supports repetitive energy dissipation up to peak reverse power limit; enables use in snubberless or clamped topologies. |
Applications
| Avionics Power Conversion | Military Radar Transmitter Supplies |
|---|---|
Use Scenario: DC power generation from aircraft 115 VAC 400 Hz generators using high-frequency rectification stages. IC Role / Device Role / Timing Role: Ultrafast power rectifier in high-efficiency, multi-phase AC/DC front-end modules. Use Value: 30 ns trr minimizes switching loss at 100–500 kHz operation; hermetic seal prevents condensation-induced failure at altitude. | Use Scenario: High-voltage pulse-forming network (PFN) charging in pulsed radar transmitters. IC Role / Device Role / Timing Role: Fast-recovery diode in resonant charging circuits requiring precise timing and low reverse recovery charge. Use Value: Controlled avalanche behavior absorbs PFN turn-off transients; 35 A IFSM handles repetitive capacitor discharge surges. |
| Satellite DC/DC Converters | Downhole Oilfield Instrumentation |
Use Scenario: Point-of-load regulation in radiation-exposed satellite bus subsystems. IC Role / Device Role / Timing Role: Output rectifier in isolated flyback or forward converters powering FPGAs and sensors. Use Value: Inherent radiation hardness (MicroNote 050) avoids single-event burnout; –65°C to +155°C range supports orbital thermal cycling. | Use Scenario: Power conditioning in high-temperature logging tools deployed at >150°C wellbore environments. IC Role / Device Role / Timing Role: Primary rectifier in thermally coupled DC supply feeding telemetry and sensor interfaces. Use Value: Voidless glass package resists thermal cracking; 13°C/W RθJEC enables direct mounting to heat-conductive housings for passive cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6073US (no /TR) | Same electrical specs and package; differs only in packaging format (bulk vs. tape-and-reel). | No functional difference; /TR denotes tape-and-reel delivery for automated assembly. | Select 1N6073US/TR for SMT production lines requiring reel-fed placement; choose bulk 1N6073US for prototyping or low-volume hand assembly. |
| 1N6074US/TR | Identical package and thermal specs, but rated for 100 V VRWM and same 30 ns trr; VF slightly higher at 2.04 V @ 9.4 A. | Used where higher reverse standoff is needed without changing board layout or thermal design. | Choose 1N6074US/TR if system reverse voltage exceeds 50 V but layout reuse and thermal profile must be preserved. |
Compared with 1N6073US/TR, the bulk 1N6073US offers identical performance with manual handling flexibility, while 1N6074US/TR provides 100 V reverse margin at no thermal or footprint penalty-enabling voltage-scaling upgrades without redesign.
Availability
1N6073US/TR is available at Aetrix Electronics and suitable for avionics power conversion, military radar transmitter supplies, and satellite DC/DC converters requiring stable component supply across extended temperature and radiation environments.
Supply support for 1N6073US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.
The 1N6073US/TR belongs to Microsemi's ultrafast hermetic glass rectifier family, engineered specifically for mission-critical power conversion where failure is not an option-emphasizing radiation tolerance, thermal resilience, and long-term hermetic integrity.
FAQ
What is the maximum junction temperature rating for the 1N6073US/TR?
The 1N6073US/TR has a specified junction temperature range of –65°C to +155°C. This wide operating envelope allows deployment in extreme environments such as spaceborne electronics, downhole oilfield tools, and airborne radar systems. The 1N6073US/TR achieves this via voidless hermetic glass packaging and tungsten slug construction, which prevent thermal delamination and maintain bond integrity across thermal cycles.
Does the 1N6073US/TR have controlled avalanche capability?
Yes, the 1N6073US/TR includes controlled avalanche capability, enabling it to safely dissipate reverse-biased transient energy without catastrophic failure. This feature is confirmed in the "Applications / Benefits" section of the official datasheet and supports use in snubberless topologies and pulse-forming networks. The 1N6073US/TR leverages its Category I metallurgical bond and triple-layer passivation to sustain repetitive avalanche events within defined peak reverse power limits.
Is the 1N6073US/TR compatible with lead-free reflow processes?
No-the 1N6073US/TR uses a Sn/Pb finish on copper end caps and is rated for soldering at 260°C for 10 seconds, consistent with traditional tin-lead reflow profiles. It is not qualified for lead-free (RoHS-compliant) reflow, which typically requires peak temperatures ≥ 260°C for longer durations. For RoHS-compliant alternatives, consult Microchip's current-generation rectifier portfolio; the 1N6073US/TR remains designated for legacy and high-reliability tin-lead assembly lines.
What does the "/TR" suffix indicate in 1N6073US/TR?
"/TR" stands for Tape and Reel packaging per EIA-481-B standard, optimized for automated surface-mount placement equipment. The 1N6073US/TR contains the identical die, package, and electrical specifications as the bulk 1N6073US, with no performance or reliability differences. The /TR variant ensures consistent orientation, spacing, and moisture barrier compliance for high-volume SMT manufacturing of the 1N6073US/TR.
How does the 1N6073US/TR compare to axial-lead equivalents like 1N6073?
The 1N6073US/TR is the surface-mount version of the 1N6073, sharing identical electrical characteristics (50 V VRWM, 3.0 A IO, 30 ns trr) but housed in Package A (D-5A) instead of axial-lead TO-204AA. The 1N6073US/TR eliminates through-hole drilling and supports higher-density layouts, while maintaining hermeticity and thermal performance. Unlike the axial version, the 1N6073US/TR uses end-cap terminations rather than wire leads, enabling direct pad mounting and improved vibration resistance.
1N6073US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, A
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io):
- 850mA
- Voltage - Forward (Vf) (Max) @ If:
- 2.04 V @ 9.4 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 30 ns
- Current - Reverse Leakage @ Vr:
- 1 µA @ 50 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
- Operating Temperature - Junction:
- -65°C ~ 155°C
1N6073US/TR FAQ
1.How can I place an order for 1N6073US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6073US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6073US/TR reliable?
The price and inventory of 1N6073US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6073US/TR is usually 5 days.
3.What payment methods are accepted for 1N6073US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6073US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6073US/TR?
1N6073US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6073US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6073US/TR?
For technical support, including 1N6073US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6073US/TR requirements.
6.How does Aetrix verify that 1N6073US/TR is sourced from the original manufacturer or authorized distributors?
All 1N6073US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6073US/TR meets industry standards.
7.What is the process for return or replacement of 1N6073US/TR?
All 1N6073US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N6073US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6073US/TR part is unused and in its original packaging.
Return procedure for 1N6073US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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