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Microchip Technology 1N6074US
- Part No.:
- 1N6074US
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
1N6074US.pdf
- Description:
- DIODE GEN PURP 100V 3A D-5A
- Quantity:
- Payment:
- Shipping:
Inventory:9,257
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Product details
Overview
1N6074US from Microsemi is an ultrafast recovery surface-mount glass power rectifier diode rated for 100 V working peak reverse voltage, 3.0 A average forward current at TEC = 70°C, and 30 ns reverse recovery time. It features voidless hermetic glass sealing with Category I metallurgical bond, triple-layer passivation, and is designed for high-reliability military and aerospace power conversion where failure tolerance is critical.
For engineers reviewing the 1N6074US datasheet, 1N6074US pinout, 1N6074US application, or 1N6074US equivalent, this diode delivers verified ultrafast switching (30 ns trr), low thermal resistance (13°C/W), controlled avalanche capability, and MIL-PRF-19500 screening options - key selection criteria for ruggedized SMPS, avionics DC/DC stages, and radiation-hardened systems.
Technical Context
This device operates as a unidirectional power rectifier in hard-switched topologies, leveraging its 30 ns reverse recovery time to minimize switching losses and reduce EMI generation during turn-off. Its 100 V VRWM rating and 35 A peak surge current support transient-heavy inputs in regulated DC supplies.
The voidless hermetic glass package with tungsten slugs and copper end caps ensures stable junction temperature operation from –65°C to +155°C, while the 13°C/W thermal resistance enables reliable 3.0 A continuous conduction at 70°C case temperature without forced cooling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 100 V - Maximum sustained reverse voltage before breakdown; defines safe operating range in DC bus or output rectification. |
| IF(AV) @ TEC = 70°C | 3.0 A - Continuous forward current capability with heatsinking via case; sets minimum trace width and thermal pad design. |
| trr | 30 ns - Measured under IF = 0.5 A, IRM = 1.0 A, IR(REC) = 0.25 A; enables >300 kHz switching in SMPS without excessive loss. |
| VF @ IF = 9.4 A | 2.04 V - Forward voltage at pulsed test current; determines conduction loss and thermal rise during surge events. |
| RθJEC | 13°C/W - Junction-to-case thermal resistance; confirms direct mounting to metal-core PCB or heatsink is sufficient for full-rated current. |
| IFSM (8.3 ms) | 35 A - Non-repetitive surge rating; supports inrush current handling in offline AC/DC front-ends. |
| IR @ VRWM | 1.0 μA - Reverse leakage at rated voltage and 25°C; ensures minimal standby power loss in high-impedance bias networks. |
Pinout & Package
Package: Hermetically sealed voidless glass "Package A" (D-5A), surface-mount MELF-style with axial symmetry and cathode band marking. Dimensions: 6.25 mm × 1.70 mm (L × D). Terminations: Copper end caps with Sn/Pb finish; polarity indicated by black band on cathode end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to AC input or transformer secondary; must withstand 35 A surge and 100 V reverse blocking. |
| Cathode | Forward current exit point | Marked by black band; connects to output filter capacitor or load return; carries full rectified current and defines reference node. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal moisture and particle ingress; certified for 10+ year operation in vacuum, humidity, and thermal cycling environments. |
| Category I metallurgical bond | Guarantees mechanical integrity of die attach under shock/vibration; required for MIL-PRF-19500 JANTXV-level screening. |
| Triple-layer passivation | Provides robust surface insulation against contamination-induced leakage or premature avalanche in high-bias applications. |
| Controlled avalanche capability | Rated peak reverse power handling enables safe clamping during inductive turn-off transients without degradation. |
| Radiation hardness | Inherently tolerant to total ionizing dose (TID) per MicroNote 050; validated for space-qualified power subsystems. |
Applications
| Avionics Power Conversion | Military Vehicle DC/DC Supplies |
|---|---|
Use Scenario: Rectifying 270 VAC-derived 100–120 VDC bus in airborne radar transmitter modules. IC Role / Device Role / Timing Role: Primary output rectifier in high-frequency resonant converter delivering 3 A continuous to RF amplifier stages. Use Value: 30 ns trr minimizes switching loss at 250 kHz, while 100 V VRWM safely accommodates line surges up to 140 V peak. | Use Scenario: Input rectification in 24 V vehicle-mounted DC/DC converters powering mission-critical comms radios. IC Role / Device Role / Timing Role: Front-end bridge rectifier in compact, conduction-cooled module operating across –40°C to +85°C ambient. Use Value: 13°C/W RθJEC and –65°C to +155°C junction range ensure stable 3 A output without derating in engine bay environments. |
| Satellite Power Management | High-Reliability Industrial UPS |
Use Scenario: Secondary-side rectification in radiation-hardened solar array regulator feeding battery charge controller. IC Role / Device Role / Timing Role: Low-leakage (1.0 μA) output rectifier maintaining efficiency during eclipse-mode low-power operation. Use Value: Inherent radiation hardness and <1 μA IR enable >15-year lifetime in GEO orbit without performance drift. | Use Scenario: Hold-up rectifier in industrial uninterruptible power supply sustaining 3 A load during 10 ms AC dropout. IC Role / Device Role / Timing Role: Surge-rated rectifier absorbing 35 A inrush from bulk capacitor charging after grid restoration. Use Value: 35 A IFSM and controlled avalanche behavior prevent catastrophic failure during repeated brownout recovery cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Vishay VS-3EYH01-M3/54 | 100 V VRWM, 3.0 A IO, 35 ns trr, TO-277 package (plastic), 15°C/W RθJA | Lacks hermetic seal and radiation hardness; not qualified to MIL-PRF-19500 | Lower-cost alternative for commercial-grade 100 V SMPS where environmental ruggedness is non-critical. |
| ON Semiconductor MUR3100CT | 100 V VRWM, 3.0 A IO per leg, 60 ns trr, TO-220AB package, dual common-cathode configuration | Slower recovery, higher thermal resistance, through-hole mounting only | Acceptable for lower-frequency (<100 kHz) industrial supplies where layout flexibility and cost outweigh speed requirements. |
Compared with VS-3EYH01-M3/54 and MUR3100CT, the 1N6074US provides superior reliability via hermetic sealing, faster recovery (30 ns), lower thermal resistance (13°C/W), and inherent radiation tolerance - making it the only choice for flight-critical, long-life, or high-TID environments.
Availability
1N6074US is available at Aetrix Electronics and suitable for avionics power conversion, military vehicle DC/DC supplies, satellite power management, and high-reliability industrial UPS requiring stable component supply across extended product lifecycles.
Supply support for 1N6074US includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.
The 1N6073US–1N6081US series was developed to meet stringent MIL-PRF-19500 requirements for ultrafast, hermetically sealed rectifiers used in mission-critical power systems where zero-failure operation is mandated.
FAQ
What is the maximum junction temperature rating for the 1N6074US?
The 1N6074US has a specified junction temperature range of –65°C to +155°C. This wide operating envelope allows deployment in extreme environments such as aircraft bays, satellite payloads, and armored vehicle electronics. The 1N6074US maintains parameter stability across this full range when mounted with appropriate thermal interface to its case, and its voidless glass construction prevents delamination or moisture ingress at temperature extremes.
Does the 1N6074US support MIL-PRF-19500 screening?
Yes, the 1N6074US can be screened to MIL-PRF-19500/503 specifications using prefix modifiers: MQ (JAN), MX (JANTX), MV (JANTXV), or SP (JANS). These variants undergo rigorous environmental, electrical, and mechanical testing including burn-in, thermal shock, and life testing. The base 1N6074US is not automatically screened; ordering requires the appropriate prefix and compliance documentation request.
What is the reverse recovery time (trr) test condition for the 1N6074US?
The 1N6074US reverse recovery time of 30 ns is measured under standardized conditions: forward test current IF = 0.5 A, reverse peak current IRM = 1.0 A, and reverse recovery current decay point IR(REC) = 0.25 A. These conditions reflect real-world switching behavior in high-frequency converters and are repeatable across production lots. The 1N6074US maintains this trr value across its full operating temperature range.
Is the 1N6074US available in tape-and-reel packaging?
Yes, the 1N6074US is supplied in EIA-481-B compliant tape-and-reel format as standard. Reel quantities support automated SMT placement, and the voidless glass body is compatible with standard reflow profiles up to 260°C for 10 seconds. The cathode band orientation is consistent across reels, enabling vision-based alignment during pick-and-place operations.
How does the 1N6074US compare to the 1N6073US and 1N6075US in terms of electrical specs?
The 1N6074US shares identical forward voltage (2.04 V), reverse recovery time (30 ns), thermal resistance (13°C/W), and surge rating (35 A) with the 1N6073US and 1N6075US. Its sole distinguishing specification is VRWM: 100 V (versus 50 V for 1N6073US and 150 V for 1N6075US). All three use Package A (D-5A), same pinout, and identical hermetic construction - enabling drop-in replacement where voltage margin permits.
1N6074US Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, A
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io):
- 3A
- Voltage - Forward (Vf) (Max) @ If:
- 2.04 V @ 9.4 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 30 ns
- Current - Reverse Leakage @ Vr:
- 1 µA @ 100 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D-5A
- Operating Temperature - Junction:
- -65°C ~ 155°C
1N6074US FAQ
1.How can I place an order for 1N6074US through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6074US on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6074US reliable?
The price and inventory of 1N6074US are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6074US is usually 5 days.
3.What payment methods are accepted for 1N6074US?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6074US transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6074US?
1N6074US orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6074US order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6074US?
For technical support, including 1N6074US datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6074US requirements.
6.How does Aetrix verify that 1N6074US is sourced from the original manufacturer or authorized distributors?
All 1N6074US products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6074US meets industry standards.
7.What is the process for return or replacement of 1N6074US?
All 1N6074US units undergo pre-shipment inspection (PSI). If there is an issue with 1N6074US, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6074US part is unused and in its original packaging.
Return procedure for 1N6074US:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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