Microchip Technology 1N6075US

Overview

1N6075US from Microsemi is a voidless hermetically sealed surface-mount ultrafast recovery glass power rectifier diode rated for 150 V working peak reverse voltage, 3.0 A average forward current at T_EC = 70°C, and 30 ns reverse recovery time. It features triple-layer passivation, Category I metallurgical bonds, and is designed for high-reliability military and aerospace switching power supplies where failure tolerance is critical.

For engineers reviewing the 1N6075US datasheet, 1N6075US pinout, 1N6075US application, or 1N6075US equivalent, key selection criteria include its 150 V VRWM rating, 35 A surge capability, 2.04 V forward voltage at 9.4 A pulsed test current, hermetic glass package (Package A / D-5A), and suitability for radiation-hardened, high-temperature environments up to +155°C junction temperature.

Technical Context

This device operates as a unidirectional power rectifier with controlled avalanche capability and low thermal resistance (13°C/W). Its ultrafast 30 ns trr enables efficient operation in high-frequency DC-DC converters and EMI-sensitive SMPS topologies.

The voidless hermetic glass construction with tungsten slugs and copper end caps ensures long-term reliability under thermal cycling and mechanical stress. Polarity is marked by a cathode band, and termination finish is Sn/Pb over copper.

Key Specifications

Pinout & Package

Package: Hermetically sealed voidless hard glass (Package A / D-5A), cylindrical surface-mount MELF-style outline with copper end caps and Sn/Pb finish. Cathode indicated by band. Weight: 193 mg.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Compared with 1N6074US and 1N6076US, the 1N6075US uniquely balances 150 V VRWM, 3 A rating, and Package A footprint-making it optimal for space-constrained, high-voltage military SMPS where voltage margin and hermetic reliability are non-negotiable.

Availability

1N6075US is available at Aetrix Electronics and suitable for aerospace power distribution, military radar transmitter supplies, and avionics flight control PSUs requiring stable component supply with guaranteed long-term obsolescence management.

Supply support for 1N6075US includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for defense, aerospace, and industrial markets.

The 1N6073US–1N6081US series was developed specifically for mission-critical rectification in radiation-exposed, thermally aggressive, and long-lifecycle systems where standard plastic-packaged diodes fail prematurely.

FAQ

What is the maximum working peak reverse voltage for the 1N6075US?

The 1N6075US has a maximum working peak reverse voltage (VRWM) of 150 V. This rating is guaranteed across its full operating junction temperature range of -65°C to +155°C and defines the highest continuous reverse voltage the device can block without entering breakdown. It is validated per Microsemi's test conditions and is critical for selecting appropriate snubber networks and safety margins in high-voltage SMPS outputs.

Does the 1N6075US have a cathode marking, and how is polarity identified?

Yes, the 1N6075US uses a visible cathode band on the glass body to indicate polarity. This band aligns with the cathode terminal and must be oriented toward the positive side of the output circuit during PCB layout. The device has no alphanumeric marking due to its hermetic glass construction, so correct orientation relies solely on this band-misplacement will cause immediate reverse conduction and potential system failure.

What is the thermal resistance (RθJEC) of the 1N6075US, and how does it affect PCB layout?

The 1N6075US has a junction-to-case thermal resistance (RθJEC) of 13°C/W. This value assumes direct thermal contact between the glass case and a copper pad or heatsink. To achieve rated 3.0 A current at T_EC = 70°C, the PCB must provide ≥100 mm² of 2-oz copper connected to both terminals, with minimal thermal isolation. Smaller pads or thin copper will exceed the 155°C max junction temperature under full load.

Is the 1N6075US suitable for radiation-hardened applications?

Yes, the 1N6075US is inherently radiation-hardened as documented in Microsemi MicroNote 050. Its voidless hermetic glass package, tungsten slug construction, and Category I metallurgical bond enable operation in total ionizing dose (TID) environments exceeding 100 krad(Si) without parameter shift. It is widely used in satellite power systems and nuclear instrumentation where single-event burnout (SEB) immunity is required.

Can the 1N6075US be substituted with an axial-leaded version like 1N6075?

No-1N6075US is a surface-mount Package A (D-5A) device, while 1N6075 is an axial-leaded through-hole variant with different mechanical dimensions, thermal path, and mounting method. They share identical electrical specs but are not mechanically interchangeable. Substitution requires full PCB redesign, requalification of thermal performance, and verification of vibration/shock survivability in the new package form factor.