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Microchip Technology 1N6076US
- Part No.:
- 1N6076US
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, E
- Datasheet:
-
1N6076US.pdf
- Description:
- DIODE GEN PURP 50V 6A D-5B
- Quantity:
- Payment:
- Shipping:
Inventory:7,718
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Product details
Overview
1N6076US from Microsemi is a surface-mount ultrafast recovery glass power rectifier diode in Package E (D-5B), rated for 50 V working peak reverse voltage, 6.0 A average forward current at TEC = 70°C, and 75 A peak surge current. It features voidless hermetic glass sealing, Category I metallurgical bond, and 30 ns reverse recovery time - deployed in high-reliability military switching power supplies.
For engineers reviewing the 1N6076US datasheet, 1N6076US pinout, 1N6076US application, or 1N6076US equivalent, key selection criteria include its 1.76 V forward voltage at 18.8 A pulsed test current, 8.5°C/W thermal resistance, cathode-band polarity marking, and compatibility with EIA-481-B tape-and-reel handling for automated SMT assembly.
Technical Context
This device operates as a unidirectional power rectifier with controlled avalanche capability and inherent radiation hardness per MicroNote 050. Its ultrafast 30 ns trr enables efficient operation in high-frequency DC-DC converters and SMPS topologies requiring low switching loss.
The voidless hermetic glass package with tungsten slugs and copper end caps ensures stable thermal performance across -65°C to +155°C junction temperature range, while triple-layer passivation enhances long-term reliability under harsh environmental stress.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Peak Reverse Voltage (VRWM) | 50 V - maximum continuous reverse bias before breakdown in normal operation |
| Average Rectified Forward Current (IO) | 6.0 A at TEC = 70°C - defines sustained DC output capability in heatsink-mounted designs |
| Forward Voltage (VF) | 1.76 V @ 18.8 A pulsed - directly impacts conduction loss and thermal load in high-current paths |
| Reverse Recovery Time (trr) | 30 ns - enables operation up to ~10 MHz switching frequencies with minimal turn-off loss |
| Thermal Resistance (RθJEC) | 8.5°C/W - quantifies junction-to-case heat transfer efficiency for thermal design margining |
| Peak Forward Surge Current (IFSM) | 75 A @ 8.3 ms half-sine - supports inrush current tolerance during cold-start conditions |
| Maximum Reverse Leakage (IR) | 5.0 μA @ VRWM - ensures low standby power loss in high-impedance reverse-biased circuits |
Pinout & Package
Package E (D-5B) is an E-MELF-style surface-mount hermetically sealed glass package with axial symmetry, tungsten internal slugs, and copper end caps with Sn/Pb finish. Polarity is marked by a cathode band on one end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive input terminal for forward conduction | Accepts incoming AC or switched DC; connects to transformer secondary or switch node |
| Cathode | Negative output terminal for forward conduction | Delivers rectified DC output; marked by visible band; connects to output filter capacitor |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass construction | Eliminates moisture ingress and internal delamination risk over 20+ year field life in aerospace systems |
| Category I metallurgical bond | Guarantees mechanical integrity under shock/vibration per MIL-STD-883, critical for launch vehicle avionics |
| Controlled avalanche capability | Enables safe clamping of inductive switching transients without catastrophic failure |
| Triple-layer passivation | Prevents surface leakage and corrosion in high-humidity or salt-fog environments |
| Inherent radiation hardness | Meets TID > 100 krad(Si) without derating - validated per MicroNote 050 for space-grade use |
Applications
| Military Power Conversion | Aerospace Avionics Supply |
|---|---|
Use Scenario: DC-DC conversion in airborne radar transmitters requiring zero-failure operation over 15-year service life. IC Role / Device Role / Timing Role: Primary output rectifier in resonant LLC converter stage operating at 300–500 kHz. Use Value: 30 ns trr minimizes switching loss; 75 A IFSM withstands pulsed RF amplifier loads. | Use Scenario: Input rectification for triple-redundant flight control computer power modules. IC Role / Device Role / Timing Role: Front-end bridge rectifier in isolated 28 V DC input stage with hot-swap capability. Use Value: Voidless glass seal prevents latent failure from thermal cycling; RθJEC = 8.5°C/W enables compact heatsinking. |
| Satellite Power Management | Tactical Communications Equipment |
Use Scenario: Secondary-side rectification in solar array regulator units exposed to total ionizing dose. IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier replacement in 24 V/10 A regulated bus. Use Value: Inherent radiation hardness eliminates need for shielding or derating; 50 V VRWM matches bus overvoltage margin. | Use Scenario: AC/DC front-end in man-portable HF/VHF transceivers subject to wide ambient temperature swings. IC Role / Device Role / Timing Role: Input rectifier in compact flyback converter powering RF PA and digital baseband. Use Value: -65°C to +155°C operating range ensures functionality in desert/arctic deployments; 1.76 V VF reduces thermal load in sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Vishay VS-6EWH05FN-M3 | 6 A, 50 V, 35 ns trr, TO-277 package, 1.85 V VF @ 18 A | Higher forward voltage; plastic package lacks hermeticity and radiation tolerance | Preferred for commercial industrial SMPS where cost and volume outweigh radiation/military qualification needs |
| ON Semiconductor MUR620CT | 6 A, 200 V, 60 ns trr, TO-220AB package, 1.7 V VF @ 6 A | Slower recovery; higher VRWM; through-hole mounting; no hermetic seal or radiation spec | Used in non-mission-critical 200 V applications where board space and thermal mass allow larger package |
Compared with VS-6EWH05FN-M3 and MUR620CT, the 1N6076US delivers superior reliability in radiation-exposed, thermally cycled, or long-life military/aerospace systems due to its voidless glass seal, Category I bond, and verified TID hardness - but requires SMT placement infrastructure and higher procurement oversight.
Availability
1N6076US is available at Aetrix Electronics and suitable for military power conversion, aerospace avionics supply, satellite power management, and tactical communications equipment requiring stable component supply across extended product lifecycles.
Supply support for 1N6076US includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, discretes, and RF solutions for defense, aerospace, and industrial markets.
The 1N6073US–1N6081US series was designed specifically for mission-critical rectification in environments demanding hermetic sealing, radiation tolerance, and extreme thermal survivability - not general-purpose power conversion.
FAQ
What is the maximum junction temperature rating for the 1N6076US?
The 1N6076US has a specified junction temperature range of -65°C to +155°C. This wide operating envelope allows deployment in extreme environments such as spacecraft thermal vacuum chambers or jet engine-mounted electronics. The 1N6076US maintains parametric stability across this full range when operated within its maximum ratings, including thermal resistance of 8.5°C/W from junction to case.
Does the 1N6076US have a cathode band marking?
Yes, the 1N6076US uses a visible cathode band on one end of its E-MELF glass package to indicate polarity. This band aligns with industry-standard diode marking conventions and must be oriented toward the positive output node during PCB layout. The 1N6076US does not feature alphanumeric marking; polarity identification relies solely on this band.
Is the 1N6076US available in tape-and-reel packaging?
Yes, the 1N6076US is supplied in standard EIA-481-B compliant tape-and-reel format, enabling direct integration into automated SMT pick-and-place lines. Reel quantities follow standard industry packaging densities for Package E (D-5B), and the 1N6076US tape configuration accommodates high-speed placement without damage to the hermetic glass body or end-cap terminations.
What is the reverse recovery time (trr) specification for the 1N6076US?
The 1N6076US has a maximum reverse recovery time of 30 ns, measured under standardized conditions of IF = 0.5 A, IRM = 1.0 A, and IR(REC) = 0.25 A. This ultrafast trr enables efficient operation in high-frequency switching power supplies above 300 kHz, where minimizing turn-off loss is critical to overall system efficiency and thermal management of the 1N6076US.
Can the 1N6076US be used as a drop-in replacement for the 1N6074US?
No, the 1N6076US is not a drop-in replacement for the 1N6074US. While both are ultrafast rectifiers, they differ in package (E vs. A), current rating (6.0 A vs. 3.0 A), thermal resistance (8.5°C/W vs. 13°C/W), and surge capability (75 A vs. 35 A). Substituting the 1N6076US for the 1N6074US requires PCB pad redesign, thermal analysis, and validation of surge margin - the 1N6076US is a distinct part optimized for higher-power applications.
1N6076US Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, E
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io):
- 6A
- Voltage - Forward (Vf) (Max) @ If:
- 1.76 V @ 18.8 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 30 ns
- Current - Reverse Leakage @ Vr:
- 5 µA @ 50 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D-5B
- Operating Temperature - Junction:
- -65°C ~ 155°C
1N6076US FAQ
1.How can I place an order for 1N6076US through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6076US on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6076US reliable?
The price and inventory of 1N6076US are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6076US is usually 5 days.
3.What payment methods are accepted for 1N6076US?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6076US transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6076US?
1N6076US orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6076US order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6076US?
For technical support, including 1N6076US datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6076US requirements.
6.How does Aetrix verify that 1N6076US is sourced from the original manufacturer or authorized distributors?
All 1N6076US products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6076US meets industry standards.
7.What is the process for return or replacement of 1N6076US?
All 1N6076US units undergo pre-shipment inspection (PSI). If there is an issue with 1N6076US, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6076US part is unused and in its original packaging.
Return procedure for 1N6076US:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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