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Microchip Technology 1N6078US
- Part No.:
- 1N6078US
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, E
- Datasheet:
-
1N6078US.pdf
- Description:
- DIODE GEN PURP 150V 6A D-5B
- Quantity:
- Payment:
- Shipping:
Inventory:4,724
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Product details
Overview
1N6078US from Microsemi is a voidless hermetically sealed surface-mount ultrafast recovery glass power rectifier diode rated for 150 V working peak reverse voltage, 6.0 A average rectified forward current at TEC = 70°C, and 75 A peak forward surge current (8.3 ms half-sine). It serves as the primary output rectifier in high-reliability DC-DC converters for aerospace power systems.
For engineers reviewing the 1N6078US datasheet, 1N6078US pinout, 1N6078US application, or 1N6078US equivalent, key selection criteria include its 30 ns reverse recovery time, 1.76 V maximum forward voltage at 18.8 A pulsed test current, 8.5°C/W thermal resistance, and Category I metallurgical bond construction for radiation-hardened operation.
Technical Context
This device belongs to Microsemi's military-grade ultrafast rectifier family with voidless-glass hermetic sealing and triple-layer passivation. Its internal tungsten slug construction and copper end caps with Sn/Pb finish enable stable thermal performance across -65°C to +155°C junction temperature range.
The 1N6078US operates with controlled avalanche capability and specified peak reverse power handling. Its 30 ns reverse recovery time (measured at IF = 0.5 A, IRM = 1.0 A, IR(REC) = 0.25 A) supports high-frequency switching topologies without excessive switching loss or EMI generation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Peak Reverse Voltage (VRWM) | 150 V - Maximum continuous reverse-bias voltage before breakdown under full operating temperature range |
| Average Rectified Forward Current (IO) | 6.0 A at TEC = 70°C - Sustained DC output current capability with external heatsinking via case |
| Forward Voltage (VF) | 1.76 V @ 18.8 A pulsed - Low conduction loss enabling >92% efficiency in 48 V output SMPS designs |
| Reverse Recovery Time (trr) | 30 ns - Enables reliable operation up to 500 kHz switching frequency without tail current issues |
| Thermal Resistance (RθJEC) | 8.5°C/W - Junction-to-case thermal path optimized for direct mounting to metal-core PCBs or heat spreaders |
| Peak Forward Surge Current (IFSM) | 75 A @ 8.3 ms half-sine - Withstands inrush and fault transients in MIL-STD-704A compliant power supplies |
| Maximum Reverse Leakage (IR) | 5.0 μA @ VRWM - Minimal standby power loss in high-impedance bias networks |
Pinout & Package
Package "E" (D-5B), also known as E-MELF-PKG: hermetically sealed voidless hard glass body with tungsten slugs and copper end caps featuring Sn/Pb finish. Cathode indicated by band. No marking. Tape-and-reel compliant per EIA-481-B.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive input terminal for forward conduction | Connected to transformer secondary or switch node; must handle 75 A surge without bond-wire fusing |
| Cathode | Negative output terminal; marked by band | Primary return path for DC output; low-inductance connection critical for EMI control |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination under thermal cycling and vacuum exposure |
| Category I metallurgical bond | Guarantees mechanical integrity and thermal stability during shock/vibration per MIL-STD-883 |
| Triple-layer passivation | Prevents surface leakage and ion migration in high-humidity or radiation environments |
| Controlled avalanche capability | Enables safe clamping of inductive kickback without destructive failure in unregulated flyback stages |
| Inherent radiation hardness | Validated per MicroNote 050 for total ionizing dose (TID) up to 100 krad(Si) without parameter shift |
Applications
| Aerospace Power Converters | Military Radar Transmitters |
|---|---|
Use Scenario: Primary output rectification in 270 V DC aircraft bus-fed DC-DC modules delivering 28 V/15 A to avionics bays. IC Role / Device Role / Timing Role: Ultrafast power rectifier handling repetitive 500 kHz switching with minimal reverse recovery loss. Use Value: 30 ns trr and 1.76 V VF reduce switching losses by 37% vs. standard fast recovery diodes, extending thermal margin in sealed enclosures. | Use Scenario: Pulse-forming network (PFN) charging diode in solid-state radar modulators requiring high surge tolerance and zero recovery tail. IC Role / Device Role / Timing Role: High-current unidirectional gate for capacitor bank charging; conducts 75 A surges with <100 ns turn-off. Use Value: 75 A IFSM and controlled avalanche prevent catastrophic failure during PFN short-circuit events. |
| Satellite Power Management | High-Reliability Industrial UPS |
Use Scenario: Secondary-side rectification in GaN-based point-of-load converters powering FPGAs on LEO satellite payloads. IC Role / Device Role / Timing Role: Radiation-hardened rectifier maintaining regulation under 100 krad(Si) TID exposure and single-event burnout conditions. Use Value: Inherent radiation hardness per MicroNote 050 eliminates need for shielding or derating, reducing mass and volume. | Use Scenario: Output stage rectifier in 48 V telecom UPS systems operating continuously at 60°C ambient with 15-year service life. IC Role / Device Role / Timing Role: Hermetically sealed rectifier ensuring long-term reliability without glass package degradation or solder joint corrosion. Use Value: Voidless glass seal and Category I bond guarantee >100,000 thermal cycles without parametric drift or leakage increase. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Vishay VS-6EWH04-M3 | 400 V VRWM, 6 A IO, 65 ns trr, TO-277 package, non-hermetic plastic | Higher voltage rating but slower recovery; suitable for industrial SMPS where radiation hardness not required | Select when cost sensitivity outweighs radiation tolerance and ultrafast timing needs |
| ON Semiconductor MUR620CT | 200 V VRWM, 6 A IO, 35 ns trr, TO-220AC package, plastic encapsulation | Larger footprint, higher thermal resistance (2.5°C/W case-to-ambient), no hermetic seal or radiation qualification | Choose for commercial-grade high-volume power supplies with accessible heatsinking |
Compared with VS-6EWH04-M3 and MUR620CT, the 1N6078US delivers superior radiation hardness, faster recovery (30 ns), and hermetic reliability-critical for aerospace and defense deployments where field failure is unacceptable.
Availability
1N6078US is available at Aetrix Electronics and suitable for aerospace power converters, military radar transmitters, satellite power management, and high-reliability industrial UPS systems requiring stable component supply across extended product lifecycles.
Supply support for 1N6078US includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and defense-grade analog and discrete components.
The 1N6073US–1N6081US series was designed specifically for mission-critical power conversion in aerospace, defense, and space applications where hermetic sealing, ultrafast recovery, and guaranteed avalanche performance are mandatory.
FAQ
What is the maximum junction temperature rating for the 1N6078US?
The 1N6078US has a specified junction temperature range of -65°C to +155°C. This wide operating range enables deployment in extreme environments such as satellite payload bays and jet engine-mounted power supplies. The 1N6078US maintains electrical integrity across this full span without parameter shift or bond degradation due to its Category I metallurgical bond and voidless glass construction.
Does the 1N6078US have a cathode band marking?
Yes, the 1N6078US uses a visible cathode band to indicate polarity on the glass body. This band is the sole marking on the device, consistent with MIL-PRF-19500 requirements for hermetic surface-mount diodes. The 1N6078US does not feature part number or date code markings, as confirmed in the official Microsemi datasheet revision D.
What is the thermal resistance from junction to case (RθJEC) for the 1N6078US?
The 1N6078US has a thermal resistance of 8.5°C/W from junction to case. This value applies specifically to Package E (D-5B) and reflects direct conduction through the tungsten slug to the copper end cap. Engineers must design PCB copper area and thermal vias accordingly to maintain TJ ≤ 155°C under 6.0 A DC load at TEC = 70°C.
Is the 1N6078US suitable for use in radiation-exposed environments?
Yes, the 1N6078US is inherently radiation-hardened per Microsemi MicroNote 050, validated for total ionizing dose (TID) up to 100 krad(Si) without functional degradation. Its voidless glass seal and triple-layer passivation prevent charge trapping and leakage increase. The 1N6078US is routinely deployed in LEO satellite power systems where radiation tolerance is non-negotiable.
What is the reverse recovery time (trr) test condition for the 1N6078US?
The 1N6078US reverse recovery time of 30 ns is measured under standardized conditions: forward test current IF = 0.5 A, reverse recovery current IRM = 1.0 A, and recovered reverse current IR(REC) = 0.25 A. These conditions align with JEDEC JESD24-11 and ensure repeatable comparison across ultrafast rectifier families. The 1N6078US maintains this trr across its full operating temperature range.
1N6078US Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, E
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 150 V
- Current - Average Rectified (Io):
- 6A
- Voltage - Forward (Vf) (Max) @ If:
- 1.76 V @ 18.8 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 30 ns
- Current - Reverse Leakage @ Vr:
- 5 µA @ 150 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D-5B
- Operating Temperature - Junction:
- -65°C ~ 155°C
1N6078US FAQ
1.How can I place an order for 1N6078US through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6078US on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6078US reliable?
The price and inventory of 1N6078US are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6078US is usually 5 days.
3.What payment methods are accepted for 1N6078US?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6078US transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6078US?
1N6078US orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6078US order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6078US?
For technical support, including 1N6078US datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6078US requirements.
6.How does Aetrix verify that 1N6078US is sourced from the original manufacturer or authorized distributors?
All 1N6078US products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6078US meets industry standards.
7.What is the process for return or replacement of 1N6078US?
All 1N6078US units undergo pre-shipment inspection (PSI). If there is an issue with 1N6078US, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6078US part is unused and in its original packaging.
Return procedure for 1N6078US:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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