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Microchip Technology 1N6078US/TR
- Part No.:
- 1N6078US/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, E
- Datasheet:
-
1N6078US/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:2,046
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Product details
Overview
1N6078US/TR from Microsemi is an ultrafast recovery surface-mount glass power rectifier diode rated for 150 V working peak reverse voltage, 6.0 A average forward current at TEC = 70°C, and 75 A peak surge current (8.3 ms), used in high-reliability switching power supplies requiring low forward loss and controlled avalanche capability.
For engineers reviewing the 1N6078US/TR datasheet, 1N6078US/TR pinout, 1N6078US/TR application, or 1N6078US/TR equivalent, key selection criteria include its voidless hermetic glass package, 30 ns reverse recovery time, Category I metallurgical bond, triple-layer passivation, and suitability for MIL-PRF-19500 screening when ordered with MQ/MX/MV/SP prefixes.
Technical Context
This device operates as a unidirectional power rectifier with cathode-banded polarity marking, designed for DC output stages in high-efficiency SMPS where fast switching minimizes switching losses. Its 1.76 V maximum forward voltage at 18.8 A pulsed test current and 5.0 µA max reverse leakage at 150 V support stable conduction under transient load conditions.
The 1N6078US/TR uses Package E (D-5B) - an E-MELF-style hermetically sealed voidless glass case with tungsten slugs and copper end caps - delivering 8.5°C/W thermal resistance from junction to external case, enabling reliable operation up to +155°C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Peak Reverse Voltage (VRWM) | 150 V - defines maximum continuous reverse bias before breakdown in DC/AC peak applications |
| Average Forward Current (IO @ TEC = 70°C) | 6.0 A - sustained DC output current capability with external heatsinking via case |
| Forward Voltage (VF @ 18.8 A pulsed) | 1.76 V - low conduction loss enabling high efficiency in high-current switching nodes |
| Reverse Recovery Time (trr) | 30 ns - enables operation at >100 kHz switching frequencies with minimal turn-off loss |
| Peak Surge Current (IFSM) | 75 A (8.3 ms half-sine) - withstands inrush and fault transients without failure |
| Thermal Resistance (RθJEC) | 8.5°C/W - allows direct thermal coupling to PCB copper or heatsink for power derating |
| Junction Temperature Range | –65°C to +155°C - supports operation in extended industrial, aerospace, and military environments |
Pinout & Package
Package E (D-5B): E-MELF-style hermetically sealed voidless glass case with tungsten slugs and copper end caps; cathode indicated by band; no marking; RoHS-compliant Sn/Pb finish on terminations.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive input terminal | Accepts incoming AC or switched DC; connects to transformer secondary or switch node |
| Cathode | Negative output terminal | Delivers rectified DC output; marked by visible band; connects to output filter capacitor |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Prevents moisture ingress and internal corrosion over decades of operation in harsh environments |
| Category I metallurgical bond | Ensures mechanical integrity and thermal cycling reliability per MIL-STD-750 Method 2035 |
| Triple-layer passivation | Provides robust surface protection against contamination and electrical leakage in high-humidity conditions |
| Controlled avalanche capability | Allows safe clamping of inductive switching spikes without destructive breakdown |
| Inherent radiation hardness | Validated per MicroNote 050 for total ionizing dose (TID) tolerance in space-grade systems |
Applications
| Military Power Conversion | Aerospace Avionics DC Supplies |
|---|---|
Use Scenario: DC-DC conversion in airborne radar transmitters requiring zero-failure operation over 20+ year service life. IC Role / Device Role / Timing Role: Primary output rectifier in resonant LLC converter stage handling 48 V input and 28 V regulated output. Use Value: 30 ns trr and 75 A IFSM ensure clean commutation during pulse-modulated RF amplifier duty cycles. | Use Scenario: Power conditioning in satellite payload telemetry modules exposed to vacuum and thermal cycling. IC Role / Device Role / Timing Role: Output rectifier in isolated flyback supply powering FPGA configuration circuitry. Use Value: Voidless glass package and –65°C to +155°C rating maintain parametric stability across orbital temperature extremes. |
| High-Reliability Industrial SMPS | Traction Control Power Interfaces |
Use Scenario: Front-end rectification in medical imaging power supplies where component failure risks patient safety. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacement in 1 kW AC/DC brick with active PFC. Use Value: 1.76 V VF reduces conduction loss versus standard fast diodes, improving overall system efficiency by ~1.2%. | Use Scenario: Regenerative braking energy recovery in rail signaling control cabinets operating in outdoor substations. IC Role / Device Role / Timing Role: Freewheeling diode across IGBT gate drivers and snubber networks. Use Value: Controlled avalanche behavior safely absorbs inductive kickback without external clamping components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Vishay VS-6EWH04-M3/45 | 400 V VRWM, 6 A IO, 35 ns trr, TO-277 package, non-hermetic epoxy | Higher voltage rating but lower reliability in humid/marine environments | Select when higher reverse voltage margin is required and hermeticity is not mandated |
| ON Semiconductor MUR620CT | 200 V VRWM, 6 A IO, 35 ns trr, TO-220AB package, dual common-cathode die | Through-hole mounting, higher thermal mass, no radiation hardness or MIL screening path | Select for cost-sensitive industrial designs where board-level rework is acceptable and screening is unnecessary |
Compared with VS-6EWH04-M3/45 and MUR620CT, the 1N6078US/TR delivers superior long-term reliability in mission-critical systems due to its voidless hermetic seal, Category I bond, and inherent radiation tolerance - making it the only choice for programs requiring MIL-PRF-19500 compliance or >15-year field life without maintenance.
Availability
1N6078US/TR is available at Aetrix Electronics and suitable for military power conversion, aerospace avionics DC supplies, and high-reliability industrial SMPS requiring stable component supply across extended product lifecycles.
Supply support for 1N6078US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, discrete devices, and radiation-hardened components for defense, aerospace, and industrial markets.
The 1N6078US/TR belongs to Microsemi's ultrafast glass rectifier family, engineered specifically for applications demanding zero-tolerance failure modes, hermetic integrity, and performance stability under extreme environmental stress.
FAQ
What is the maximum junction temperature rating for the 1N6078US/TR?
The 1N6078US/TR has a specified junction temperature range of –65°C to +155°C. This wide operating envelope supports deployment in extreme environments such as aircraft bays, satellite payloads, and outdoor military shelters. The 1N6078US/TR achieves this rating through its voidless hermetic glass construction and Category I metallurgical bond, which prevent thermal delamination and interfacial degradation over repeated thermal cycles.
Does the 1N6078US/TR have a cathode band marking?
Yes, the 1N6078US/TR uses a visible cathode band to indicate polarity, consistent with industry-standard diode marking conventions. This band is applied directly on the glass envelope of the Package E (D-5B) casing. No alphanumeric marking is present on the device body, as stated in the official Microsemi datasheet. The cathode band must be aligned toward the negative side of the circuit during PCB layout.
Is the 1N6078US/TR suitable for MIL-PRF-19500 screening?
Yes - when ordered with appropriate prefix codes (MX, MV, or SP), the 1N6078US/TR can be processed to meet MIL-PRF-19500/503 requirements for JANTX, JANTXV, or JANS levels. The base 1N6078US/TR is not screened; however, its underlying construction - including voidless glass sealing and Category I bonds - provides the foundational reliability needed for qualification. Screening adds test rigor but does not alter the intrinsic 1N6078US/TR design.
What is the thermal resistance from junction to external case (RθJEC) for the 1N6078US/TR?
The 1N6078US/TR has a thermal resistance of 8.5°C/W from junction to external case (RθJEC). This value reflects direct heat transfer from the silicon die through tungsten slugs into the copper end caps. It enables effective thermal management when mounted on thermally enhanced PCB pads or heatsinks, supporting full 6.0 A current derating at TEC = 70°C without additional forced cooling.
How does the 1N6078US/TR differ from the 1N6077US?
The 1N6078US/TR and 1N6077US share identical package (E/D-5B), thermal resistance (8.5°C/W), and reverse recovery time (30 ns), but differ in working peak reverse voltage: 1N6078US/TR is rated for 150 V VRWM, while 1N6077US is rated for 100 V. Both deliver 1.76 V VF at 18.8 A and 6.0 A IO at TEC = 70°C. Selection depends strictly on system-level reverse voltage margin requirements.
1N6078US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, E
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 150 V
- Current - Average Rectified (Io):
- 1.3A
- Voltage - Forward (Vf) (Max) @ If:
- 1.76 V @ 18.8 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 30 ns
- Current - Reverse Leakage @ Vr:
- 5 µA @ 150 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- E-MELF
- Operating Temperature - Junction:
- -65°C ~ 155°C
1N6078US/TR FAQ
1.How can I place an order for 1N6078US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6078US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6078US/TR reliable?
The price and inventory of 1N6078US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6078US/TR is usually 5 days.
3.What payment methods are accepted for 1N6078US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6078US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6078US/TR?
1N6078US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6078US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6078US/TR?
For technical support, including 1N6078US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6078US/TR requirements.
6.How does Aetrix verify that 1N6078US/TR is sourced from the original manufacturer or authorized distributors?
All 1N6078US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6078US/TR meets industry standards.
7.What is the process for return or replacement of 1N6078US/TR?
All 1N6078US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N6078US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6078US/TR part is unused and in its original packaging.
Return procedure for 1N6078US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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