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Microchip Technology 1N6079US
- Part No.:
- 1N6079US
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, G
- Datasheet:
-
1N6079US.pdf
- Description:
- DIODE GEN PURP 50V 2A G-MELF
- Quantity:
- Payment:
- Shipping:
Inventory:3,024
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Product details
Overview
1N6079US from Microsemi is a surface-mount ultrafast recovery glass power rectifier diode in Package G (D-5C), rated for 50 V working peak reverse voltage, 12.0 A average rectified forward current at TEC = +70°C, and 175 A peak forward surge current (8.3 ms half-sine). It features voidless hermetic glass sealing, Category I metallurgical bond, and 30 ns reverse recovery time - deployed in high-reliability military switching power supplies.
For engineers reviewing the 1N6079US datasheet, 1N6079US pinout, 1N6079US application, or 1N6079US equivalent, key selection criteria include its 5.0°C/W thermal resistance, 1.50 V max forward voltage at 37.7 A pulsed test current, controlled avalanche capability, radiation-hardened construction per MicroNote 050, and MIL-PRF-19500 screening eligibility with MV prefix.
Technical Context
This device operates as a unidirectional power rectifier with ultrafast recovery (trr = 30 ns) enabled by optimized carrier lifetime control and triple-layer passivation. Its voidless hermetic glass package with tungsten slugs and copper end caps ensures stable junction temperature operation from −65°C to +155°C and low thermal resistance (5.0°C/W).
The 1N6079US supports high-reliability DC-DC conversion where low forward loss, high surge immunity (175 A), and controlled avalanche behavior under transient overvoltage are required. Its 10 µA max reverse leakage at 50 V and cathode-band polarity marking align with MIL-STD-750 test compliance for hermetic discrete devices.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Peak Reverse Voltage (VRWM) | 50 V - Maximum continuous reverse bias before breakdown; defines safe operating range in flyback/clamp circuits. |
| Average Rectified Forward Current (IO) | 12.0 A at TEC = +70°C - Sustained DC output current capability with heatsink interface at elevated case temperature. |
| Peak Forward Surge Current (IFSM) | 175 A (8.3 ms half-sine) - Withstands inrush/short-circuit transients without failure in SMPS primary-side rectification. |
| Reverse Recovery Time (trr) | 30 ns - Enables high-frequency switching (>100 kHz) with minimal switching loss and EMI generation. |
| Thermal Resistance (RθJEC) | 5.0°C/W - Low junction-to-case resistance enables efficient heat transfer to PCB copper or heatsink in compact layouts. |
| Forward Voltage (VF) | 1.50 V @ 37.7 A pulsed - Low conduction loss improves efficiency in high-current, low-voltage secondary-side rectifiers. |
| Reverse Leakage Current (IR) | 10 µA @ VRWM = 50 V - Minimal standby power loss and stable blocking performance across temperature. |
Pinout & Package
Package G (D-5C): Hermetically sealed voidless hard glass case with tungsten slugs; copper end caps with Sn/Pb finish; cathode indicated by band; weight 1100 mg; tape-and-reel compliant per EIA-481-B.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry terminal | Connected to transformer secondary or input rail; must handle 175 A surge without bond-wire fusing. |
| Cathode | Forward current exit terminal | Marked by colored band; connects to output filter capacitor or load; carries full rectified DC current. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination - critical for 20+ year field life in aerospace avionics. |
| Category I metallurgical bond | Guarantees mechanical integrity under thermal cycling and vibration; qualified per MIL-PRF-19500 Class H. |
| Controlled avalanche capability | Withstands repetitive reverse overvoltage transients up to peak reverse power limit without degradation. |
| Tungsten slug construction | Provides low thermal expansion match to silicon die and high thermal conductivity path to PCB mounting surface. |
| Radiation hardness | Inherently tolerant to total ionizing dose (TID) per Microsemi MicroNote 050 - suitable for space-grade systems. |
Applications
| Military DC-DC Converters | Aerospace Power Distribution Units |
|---|---|
Use Scenario: Primary-side rectification in 28 V to 5 V isolated converters powering flight control computers. IC Role / Device Role / Timing Role: Ultrafast power rectifier handling 12 A continuous output with 175 A surge tolerance during cold-start. Use Value: 30 ns trr minimizes switching loss at 250 kHz; 5.0°C/W RθJEC enables conduction-cooled layout without heatsinks. |
Use Scenario: Redundant bus protection in satellite power management modules requiring >15-year MTBF. IC Role / Device Role / Timing Role: Hermetic rectifier in OR-ing diode configuration for dual-battery backup systems. Use Value: Voidless glass seal and Category I bond ensure zero latent failures under vacuum and thermal shock per MIL-STD-883. |
| High-Reliability Industrial UPS | Radiation-Hardened Test Equipment |
Use Scenario: Output rectification in 48 V online UPS inverters operating continuously at 60°C ambient. IC Role / Device Role / Timing Role: High-current, low-VF rectifier delivering 12 A with <1.5 V drop to maximize battery runtime. Use Value: 1.50 V VF at 37.7 A reduces conduction loss by 22% vs. standard fast recovery diodes at same current. |
Use Scenario: Input-stage protection and signal conditioning in nuclear facility monitoring instruments. IC Role / Device Role / Timing Role: Radiation-tolerant rectifier in front-end power conditioning of gamma-ray spectrometers. Use Value: Inherent TID hardness per MicroNote 050 eliminates need for external shielding or derating in 10 krad(Si) environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Vishay VS-12EWH05-M3 | 50 V VRWM, 12 A IO, 35 ns trr, TO-277 package, 1.65 V VF @ 12 A - higher forward drop, plastic package. | Lacks hermetic seal and radiation hardness; not qualified for MIL-PRF-19500 screening. | Select when cost sensitivity outweighs long-term reliability and radiation requirements. |
| ON Semiconductor MUR1260CT | 600 V VRWM, 12 A IO, 60 ns trr, TO-220AB package, 1.7 V VF - higher voltage rating but slower recovery and larger footprint. | Designed for general-purpose industrial SMPS; no military screening or vacuum compatibility. | Select only if higher reverse voltage margin is needed and 30 ns trr is not critical. |
Compared with VS-12EWH05-M3 and MUR1260CT, the 1N6079US delivers superior thermal performance (5.0°C/W vs. ≥15°C/W), guaranteed hermetic reliability, and radiation tolerance - making it irreplaceable in mission-critical aerospace and defense power systems.
Availability
1N6079US is available at Aetrix Electronics and suitable for military DC-DC converters, aerospace power distribution units, and high-reliability industrial UPS requiring stable component supply, long-lifecycle support, and traceable hermetic sourcing.
Supply support for 1N6079US includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, hermetic, and MIL-spec components.
The 1N6079US belongs to Microsemi's ultrafast glass power rectifier family engineered specifically for mission-critical power conversion where failure is not an option - including avionics, satellite subsystems, and nuclear instrumentation.
FAQ
What is the maximum junction temperature rating for the 1N6079US?
The 1N6079US has a specified junction temperature range of −65°C to +155°C. This wide operating envelope supports deployment in extreme environments such as aircraft bays and space-qualified enclosures. The 1N6079US maintains electrical stability across this full range when mounted with proper thermal interface to a heatsink or copper plane, leveraging its 5.0°C/W RθJEC.
Does the 1N6079US support MIL-PRF-19500 screening?
Yes - the 1N6079US can be screened to MIL-PRF-19500/503 requirements using the MV prefix (e.g., MV6079) for JANTXV-level qualification. This includes rigorous environmental stress screening, burn-in, and parametric testing. The 1N6079US base part already incorporates Category I metallurgical bonds and voidless hermetic construction required for this specification.
What is the reverse recovery time (trr) of the 1N6079US and how is it measured?
The 1N6079US has a maximum reverse recovery time of 30 ns, measured under standardized conditions: IF = 0.5 A, IRM = 1.0 A, and IR(REC) = 0.25 A. This value reflects rapid minority-carrier recombination enabled by Microsemi's proprietary epitaxial process and passivation - critical for minimizing switching losses in high-frequency SMPS designs.
Is the 1N6079US compatible with lead-free soldering processes?
The 1N6079US is rated for solder temperature up to 260°C for 10 seconds, meeting J-STD-020 moisture sensitivity level (MSL) requirements for lead-free reflow. Its copper end caps with Sn/Pb finish are compatible with both SnPb and SAC305 pastes; however, Pb-free assembly requires verification of intermetallic formation per JEDEC standards due to finish composition.
How does the 1N6079US differ from the 1N6079 (non-US) variant?
The 1N6079US is the surface-mount version in Package G (D-5C), while the 1N6079 is the axial-leaded through-hole variant. They share identical electrical specifications (50 V VRWM, 12 A IO, 30 ns trr), but differ in mechanical form: 1N6079US uses hermetic glass with tungsten slugs and tape-and-reel packaging, whereas 1N6079 uses axial leads and different screening options. PCB layout and assembly processes are not interchangeable.
1N6079US Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, G
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io):
- 2A
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 37.7 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 30 ns
- Current - Reverse Leakage @ Vr:
- 10 µA @ 50 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- G-MELF (D-5C)
- Operating Temperature - Junction:
- -65°C ~ 155°C
1N6079US FAQ
1.How can I place an order for 1N6079US through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6079US on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6079US reliable?
The price and inventory of 1N6079US are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6079US is usually 5 days.
3.What payment methods are accepted for 1N6079US?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6079US transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6079US?
1N6079US orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6079US order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6079US?
For technical support, including 1N6079US datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6079US requirements.
6.How does Aetrix verify that 1N6079US is sourced from the original manufacturer or authorized distributors?
All 1N6079US products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6079US meets industry standards.
7.What is the process for return or replacement of 1N6079US?
All 1N6079US units undergo pre-shipment inspection (PSI). If there is an issue with 1N6079US, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6079US part is unused and in its original packaging.
Return procedure for 1N6079US:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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