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Microchip Technology 1N6079US/TR
- Part No.:
- 1N6079US/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
1N6079US/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:8,451
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Product details
Overview
1N6079US/TR from Microsemi is an ultrafast recovery glass power rectifier diode in a hermetically sealed surface-mount G-MELF (D-5C) package, rated for 50 V working peak reverse voltage, 12.0 A average rectified current at TEC = 70°C, 1.50 V max forward voltage at 37.7 A pulsed test current, and 30 ns reverse recovery time. It serves as a primary output rectifier in high-reliability DC/DC converters for aerospace power systems.
For engineers reviewing the 1N6079US/TR datasheet, 1N6079US/TR pinout, 1N6079US/TR application, or 1N6079US/TR equivalent, key selection criteria include its voidless-glass hermetic seal, Category I metallurgical bond, 175 A peak surge rating, low 5.0°C/W thermal resistance, and radiation-hardened construction per MicroNote 050.
Technical Context
This device belongs to Microsemi's military-grade ultrafast rectifier family optimized for zero-failure tolerance in harsh environments. Its triple-layer passivation, tungsten slug construction, and Sn/Pb-capped copper terminations ensure stable operation across –65°C to +155°C junction temperature range.
The 1N6079US/TR achieves 30 ns reverse recovery with controlled avalanche capability and peak reverse power handling - enabled by internal Category I metallurgical bonding and voidless-glass encapsulation that eliminates moisture ingress and interfacial delamination risks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Peak Reverse Voltage (VRWM) | 50 V - defines maximum continuous reverse-bias voltage before breakdown in operational circuits |
| Average Rectified Current (IO @ TEC = 70°C) | 12.0 A - sustained DC output current capability with external heatsinking via case |
| Forward Voltage (VF @ 37.7 A pulsed) | 1.50 V - low conduction loss enabling high-efficiency power conversion at high pulse loads |
| Reverse Recovery Time (trr) | 30 ns - enables switching frequencies up to ~10 MHz in resonant topologies without excessive switching loss |
| Peak Forward Surge Current (IFSM) | 175 A - withstands 8.3 ms half-sine surges common in input fault or hot-swap events |
| Thermal Resistance (RθJEC) | 5.0°C/W - allows direct thermal coupling to PCB copper or heatsink for high-power density designs |
| Junction Temperature Range | –65°C to +155°C - supports operation in extended-temperature avionics and downhole electronics |
Pinout & Package
Package: G-MELF (D-5C), hermetically sealed voidless hard glass with tungsten slugs and copper end caps with Sn/Pb finish. Cathode indicated by band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive input terminal | Accepts incoming current during forward conduction; bonded to tungsten slug for low-inductance thermal path |
| Cathode | Negative output terminal | Marked by visible band; provides low-resistance return path and interfaces directly with PCB ground plane or heatsink |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture-induced corrosion and long-term parameter drift in vacuum or humid environments |
| Category I metallurgical bond | Guarantees mechanical integrity under shock/vibration and thermal cycling beyond MIL-STD-883 requirements |
| Triple-layer passivation | Prevents surface leakage and ion migration under high humidity and bias stress conditions |
| Controlled avalanche capability | Enables safe clamping of inductive switching transients without destructive failure |
| Inherent radiation hardness | Validated per Microsemi MicroNote 050 for total ionizing dose (TID) up to 100 krad(Si) |
Applications
| Avionics Power Conversion | Military Radar Transmitter Supplies |
|---|---|
Use Scenario: Primary rectification in 28 V DC/DC converters powering flight control computers and inertial measurement units. IC Role / Device Role / Timing Role: Ultrafast power rectifier providing low-loss, high-reliability DC output under wide temperature and radiation exposure. Use Value: 30 ns trr minimizes switching loss in 200–500 kHz phase-shifted full-bridge topologies; hermetic seal ensures 20+ year field life. | Use Scenario: High-current pulse rectification in modulator supplies for airborne active electronically scanned array (AESA) radar systems. IC Role / Device Role / Timing Role: Output stage rectifier handling repetitive 175 A surge pulses with minimal voltage overshoot. Use Value: 175 A IFSM and 5.0°C/W RθJEC enable reliable operation without forced air cooling in confined radar bays. |
| Downhole Oilfield Instrumentation | Spacecraft EPS Secondary Regulation |
Use Scenario: Input rectification in isolated DC/DC modules deployed in high-temperature (>150°C ambient) borehole telemetry tools. IC Role / Device Role / Timing Role: High-temperature-rated power diode delivering stable 12 A output under extreme thermal cycling. Use Value: –65°C to +155°C operating range and radiation hardness allow uninterrupted operation in gamma-rich well logging environments. | Use Scenario: Secondary-side synchronous rectifier replacement in redundant 5 V/12 V bus converters on LEO satellite power distribution units. IC Role / Device Role / Timing Role: Radiation-tolerant ultrafast rectifier ensuring fault-free power delivery during solar particle events. Use Value: Inherent TID hardness per MicroNote 050 and voidless seal prevent latch-up or parametric shift in orbit. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6079US (no /TR) | Same electrical specs and package; differs only in packaging - bulk vs. tape-and-reel | No functional difference; /TR variant optimized for automated SMT placement | Select 1N6079US/TR for high-volume pick-and-place assembly; choose bulk 1N6079US for prototyping or manual soldering |
| MX6079 | MIL-PRF-19500/503 screened version with JAN-level reliability testing and traceable lot documentation | Required for Class H or Class K military/aerospace programs with formal qualification requirements | Choose MX6079 when compliance with MIL-STD-883 screening and DSCC source approval is mandatory |
Compared with 1N6079US/TR, the bulk 1N6079 offers identical performance but lacks EIA-481-B tape-and-reel compatibility, while MX6079 adds rigorous military screening at higher cost and longer lead time - both retain the same G-MELF package, 50 V VRWM, and 30 ns trr.
Availability
1N6079US/TR is available at Aetrix Electronics and suitable for avionics power conversion, military radar transmitter supplies, and downhole oilfield instrumentation requiring stable component supply across extended temperature and radiation environments.
Supply support for 1N6079US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, discretes, and RF solutions for aerospace, defense, and industrial markets.
The 1N6073US–1N6081US series was developed to meet stringent MIL-PRF-19500 requirements for ultrafast, hermetically sealed rectifiers used in mission-critical power systems where zero-failure tolerance is mandated.
FAQ
What is the maximum junction temperature rating for the 1N6079US/TR?
The 1N6079US/TR has a specified junction temperature range of –65°C to +155°C. This rating is validated under hermetic seal integrity and Category I metallurgical bond performance, making it suitable for deployment in extreme-environment applications such as downhole drilling tools and stratospheric avionics where thermal cycling exceeds commercial-grade limits. The 1N6079US/TR maintains parameter stability across this full range without derating.
Does the 1N6079US/TR have radiation hardness certification?
Yes, the 1N6079US/TR exhibits inherent radiation hardness validated per Microsemi MicroNote 050, covering total ionizing dose (TID) resilience up to 100 krad(Si). This characteristic stems from its voidless-glass hermetic construction and triple-layer passivation, not added process steps. The 1N6079US/TR is routinely deployed in low-Earth orbit spacecraft EPS subsystems where single-event effects and cumulative dose must be mitigated without shielding overhead.
What is the thermal resistance from junction to external case (RθJEC) for the 1N6079US/TR?
The 1N6079US/TR has a thermal resistance of 5.0°C/W from junction to external case (RθJEC). This value is measured under standardized JEDEC conditions and reflects direct thermal conduction through the tungsten slug and copper end caps. Designers use this figure to calculate junction temperature rise when mounting the 1N6079US/TR to a heatsink or thermally enhanced PCB pad, enabling accurate thermal margining in high-power-density converters.
Is the 1N6079US/TR compatible with lead-free reflow processes?
The 1N6079US/TR is qualified for solder reflow at 260°C for 10 seconds maximum, matching standard lead-free SAC305 profile peak temperatures. Its Sn/Pb-finished copper end caps are compatible with both tin-lead and lead-free pastes; however, full lead-free compliance requires verification of board-level reliability under thermal cycling due to intermetallic growth differences. The 1N6079US/TR's hermetic seal prevents moisture-related popcorning regardless of reflow profile.
How does the 1N6079US/TR differ from the axial-leaded 1N6079?
The 1N6079US/TR is the surface-mount G-MELF (D-5C) variant, whereas the 1N6079 is the axial-leaded through-hole version. They share identical electrical specifications - including 50 V VRWM, 12.0 A IO, and 30 ns trr - but differ in mechanical form, thermal path, and mounting method. The 1N6079US/TR offers lower inductance and better high-frequency performance due to its compact, symmetric geometry and direct case-to-PCB thermal interface, unlike the leaded 1N6079's wirebond-dependent thermal path.
1N6079US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, C
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io):
- 2A
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 37.7 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 30 ns
- Current - Reverse Leakage @ Vr:
- 10 µA @ 50 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D-5C
- Operating Temperature - Junction:
- -65°C ~ 155°C
1N6079US/TR FAQ
1.How can I place an order for 1N6079US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6079US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6079US/TR reliable?
The price and inventory of 1N6079US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6079US/TR is usually 5 days.
3.What payment methods are accepted for 1N6079US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6079US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6079US/TR?
1N6079US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6079US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6079US/TR?
For technical support, including 1N6079US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6079US/TR requirements.
6.How does Aetrix verify that 1N6079US/TR is sourced from the original manufacturer or authorized distributors?
All 1N6079US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6079US/TR meets industry standards.
7.What is the process for return or replacement of 1N6079US/TR?
All 1N6079US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N6079US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6079US/TR part is unused and in its original packaging.
Return procedure for 1N6079US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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