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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Microchip Technology 1N6080US

Name: 1N6080US
Brand: Microchip Technology
SKU: 1N6080US
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 1N6080US

Manufacturer:: Microchip Technology

Category:: Single Diodes

Package:: SQ-MELF, G

Datasheet:: 1N6080US.pdf

Description:: DIODE GEN PURP 100V 2A G-MELF

Quantity:: RFQ Add To RFQ list

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Product details

Overview

1N6080US from Microsemi is an ultrafast recovery surface-mount glass power rectifier diode rated for 100 V working peak reverse voltage, 12.0 A average rectified forward current at T_EC = +70°C, and 30 ns reverse recovery time. It features voidless hermetic glass sealing with Category I metallurgical bond, triple-layer passivation, and is designed for high-reliability military and aerospace switching power supplies where failure tolerance is critical.

For engineers reviewing the 1N6080US datasheet, 1N6080US pinout, 1N6080US application, or 1N6080US equivalent, key selection factors include its 100 V VRWM rating, 1.50 V forward voltage at 37.7 A pulsed test current, 175 A peak surge capability, low 5.0°C/W thermal resistance, and G-MELF (D-5C) package compatibility with high-temperature soldering up to 260°C for 10 s.

Technical Context

This device operates as a unidirectional power rectifier in DC-DC conversion stages and EMI-critical SMPS outputs. Its ultrafast 30 ns trr minimizes switching losses during hard-commutation, while controlled avalanche capability supports transient energy absorption without catastrophic failure.

The G-MELF (D-5C) package uses tungsten slugs and copper end caps with Sn/Pb finish, enabling direct thermal conduction from junction to heatsink via end-cap mounting. Its hermetic voidless-glass construction ensures long-term stability under thermal cycling and radiation exposure per MicroNote 050.

Key Specifications

Parameter	Value and Actual Design Meaning
VRWM	100 V - Maximum continuous reverse voltage before breakdown; defines safe operating range in flyback/clamp circuits.
IF(AV) @ T_EC=70°C	12.0 A - Sustained DC output current capability when mounted on a 70°C external case temperature heatsink.
VF @ 37.7 A (pulsed)	1.50 V - Low conduction loss at high transient currents, reducing I²R heating during startup or overload.
trr	30 ns - Enables operation at >100 kHz switching frequencies with minimal reverse recovery charge (Q_rr) and associated EMI.
R_θJEC	5.0°C/W - Junction-to-case thermal resistance; allows ~24 W power dissipation at ΔT = 120°C (155°C max T_J − 35°C ambient).
IFSM (8.3 ms)	175 A - Withstands high-energy line surges or inrush events without bond-wire fusing.
IR @ VRWM	10.0 μA - Low leakage preserves efficiency in high-impedance bias networks and standby modes.

Pinout & Package

Package: G-MELF (D-5C), hermetically sealed voidless glass with tungsten slugs and copper end caps (Sn/Pb finish). Cathode indicated by band. Weight: 1100 mg. Tape-and-reel compliant per EIA-481-B.

Pin/Terminal	Circuit Role	Design Meaning
Anode	Forward current entry point	Connected to input/switching node; must handle full load current and surge transients.
Cathode	Forward current exit point	Banded end; connects to output filter capacitor or ground return path; serves as primary heat sink interface.

Key Features

Feature	Design Value
Voidless hermetic glass seal	Eliminates internal moisture and particle ingress, ensuring >20-year reliability in vacuum or high-humidity environments.
Category I metallurgical bond	Guarantees mechanical integrity under shock/vibration up to 100 g and thermal cycling from −65°C to +155°C.
Triple-layer passivation	Prevents surface leakage and corrosion on glass-metal interfaces, maintaining IR stability over lifetime.
Controlled avalanche capability	Withstands repetitive 100 V reverse transients up to peak power limit without degradation or parametric shift.
Inherent radiation hardness	Qualified per MicroNote 050 for total ionizing dose (TID) >100 krad(Si) and single-event burnout (SEB) immunity.

Applications

Aerospace Power Distribution	Military Radar Transmitter Supplies
Use Scenario: Rectifying high-frequency AC from resonant inverters feeding radar modulators in airborne systems. IC Role / Device Role / Timing Role: Power rectifier in secondary-side synchronous rectification stage of pulsed RF power supply. Use Value: 30 ns trr enables clean turn-off with minimal tail current, preserving pulse fidelity and reducing EMI filtering burden.	Use Scenario: Output rectification in compact, conduction-cooled DC-DC converters powering GaN-based transmitter stages. IC Role / Device Role / Timing Role: Primary unidirectional current path handling 12 A continuous and 175 A surge pulses. Use Value: 5.0°C/W R_θJEC and hermetic G-MELF package allow direct mounting to cold plates, eliminating thermal interface layers.
Satellite On-Board Chargers	Nuclear Instrumentation Power
Use Scenario: Input rectification for battery charging regulators exposed to solar array transients and deep-space radiation. IC Role / Device Role / Timing Role: High-reliability front-end rectifier in isolated buck-boost converter feeding Li-ion management ICs. Use Value: Radiation-hardened construction and <10 μA IR ensure stable operation after 100+ krad(Si) exposure without parameter drift.	Use Scenario: Bias supply rectification in neutron/gamma detector signal conditioning modules requiring zero failure probability. IC Role / Device Role / Timing Role: Hermetically sealed, MIL-screenable rectifier in fault-tolerant linear regulator input stage. Use Value: Voidless glass seal and Category I bond prevent latent failures under sustained thermal stress and mechanical shock.

Aerospace Power Distribution

Military Radar Transmitter Supplies

Use Scenario: Rectifying high-frequency AC from resonant inverters feeding radar modulators in airborne systems.

IC Role / Device Role / Timing Role: Power rectifier in secondary-side synchronous rectification stage of pulsed RF power supply.

Use Value: 30 ns trr enables clean turn-off with minimal tail current, preserving pulse fidelity and reducing EMI filtering burden.

Use Scenario: Output rectification in compact, conduction-cooled DC-DC converters powering GaN-based transmitter stages.

IC Role / Device Role / Timing Role: Primary unidirectional current path handling 12 A continuous and 175 A surge pulses.

Use Value: 5.0°C/W R_θJEC and hermetic G-MELF package allow direct mounting to cold plates, eliminating thermal interface layers.

Satellite On-Board Chargers

Nuclear Instrumentation Power

Use Scenario: Input rectification for battery charging regulators exposed to solar array transients and deep-space radiation.

IC Role / Device Role / Timing Role: High-reliability front-end rectifier in isolated buck-boost converter feeding Li-ion management ICs.

Use Value: Radiation-hardened construction and <10 μA IR ensure stable operation after 100+ krad(Si) exposure without parameter drift.

Use Scenario: Bias supply rectification in neutron/gamma detector signal conditioning modules requiring zero failure probability.

IC Role / Device Role / Timing Role: Hermetically sealed, MIL-screenable rectifier in fault-tolerant linear regulator input stage.

Use Value: Voidless glass seal and Category I bond prevent latent failures under sustained thermal stress and mechanical shock.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Vishay VS-12EWH10	100 V VRWM, 12 A IF(AV), 35 ns trr, TO-277 package (not hermetic)	Lacks radiation hardness and MIL screening options; higher R_θJA due to plastic package	Preferred for cost-sensitive industrial SMPS where hermeticity and radiation tolerance are not required.
IXYS MBR12100CT	100 V VRWM, 12 A IF(AV), Schottky architecture, 0.85 V VF, no trr	No reverse recovery charge but limited to ≤125°C junction; not suitable for >125°C environments or avalanche stress	Selected when lowest forward loss is critical and ambient temperature remains below 105°C.

Compared with VS-12EWH10 and MBR12100CT, the 1N6080US uniquely combines hermetic reliability, radiation hardness, and controlled avalanche behavior-making it irreplaceable in mission-critical aerospace and defense power systems where long-term parametric stability under extreme conditions is non-negotiable.

Availability

1N6080US is available at Aetrix Electronics and suitable for aerospace power distribution, military radar transmitter supplies, satellite on-board chargers, and nuclear instrumentation power requiring stable component supply across extended product lifecycles.

Supply support for 1N6080US includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, emphasizing radiation tolerance, long-term stability, and extended temperature operation.

The 1N6080US belongs to Microsemi's ultrafast hermetic rectifier family, engineered specifically for mission-critical power conversion where failure is unacceptable-targeting MIL-PRF-19500-compliant systems and space-grade applications.

FAQ

What is the maximum junction temperature rating for the 1N6080US?

The 1N6080US has a specified junction temperature range of −65°C to +155°C. This wide operating envelope supports deployment in extreme environments such as spacecraft thermal vacuums and jet engine-mounted electronics. The 155°C upper limit enables reliable operation when paired with appropriate heatsinking, especially given its 5.0°C/W thermal resistance. Derating curves in the official datasheet define safe current limits at elevated temperatures.

Is the 1N6080US available in screened versions for military applications?

Yes, the 1N6080US is available in JAN, JANTX, JANTXV, and JANS grades through Microsemi's screening program per MIL-PRF-19500/503. These variants use prefixes MX, MV, or SP (e.g., MX6080, MV6080, SP6080) and undergo additional testing for vibration, thermal shock, and parametric stability. The base 1N6080US is unscreened but shares identical electrical and mechanical specifications with screened versions.

Does the 1N6080US have a cathode band marking?

Yes, the 1N6080US uses a visible cathode band on the glass body to indicate polarity. This band aligns with industry-standard MELF diode marking conventions and is essential for correct orientation during automated placement and manual assembly. No alphanumeric marking is present on the device itself, consistent with Microsemi's hermetic G-MELF packaging practice.

What is the thermal resistance from junction to case (R_θJEC) for the 1N6080US?

The 1N6080US has a measured junction-to-case thermal resistance of 5.0°C/W. This value reflects direct conduction through the tungsten slug and copper end cap, enabling efficient heat transfer to external heatsinks or PCB copper planes. It is significantly lower than smaller-package variants (e.g., 13°C/W for 1N6073US), supporting higher power density in compact, conduction-cooled designs.

Can the 1N6080US be used in place of axial-lead 1N6080 devices?

No-the 1N6080US is a surface-mount G-MELF (D-5C) device, while the axial-lead 1N6080 is a through-hole variant with different mechanical dimensions, thermal paths, and mounting requirements. They share identical electrical specifications but are not mechanically interchangeable. Substitution requires PCB redesign and requalification of thermal performance and mechanical robustness.

1N6080US Specifications

Product attributes: Attribute value

Manufacturer:: Microchip Technology

Series:: -

Package/Case:: SQ-MELF, G

Packaging:: Bulk

Product Status:: Discontinued at Digi-Key

Technology:: Standard

Voltage - DC Reverse (Vr) (Max):: 100 V

Current - Average Rectified (Io):: 2A

Voltage - Forward (Vf) (Max) @ If:: 1.5 V @ 37.7 A

Speed:: Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr):: 30 ns

Current - Reverse Leakage @ Vr:: 10 µA @ 100 V

Capacitance @ Vr, F:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: G-MELF (D-5C)

Operating Temperature - Junction:: -65°C ~ 155°C

1N6080US FAQ

1.How can I place an order for 1N6080US through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N6080US on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N6080US reliable?

The price and inventory of 1N6080US are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6080US is usually 5 days.

3.What payment methods are accepted for 1N6080US?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6080US transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N6080US?

1N6080US orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N6080US order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N6080US?

For technical support, including 1N6080US datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6080US requirements.

6.How does Aetrix verify that 1N6080US is sourced from the original manufacturer or authorized distributors?

All 1N6080US products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6080US meets industry standards.

7.What is the process for return or replacement of 1N6080US?

All 1N6080US units undergo pre-shipment inspection (PSI). If there is an issue with 1N6080US, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N6080US part is unused and in its original packaging.

Return procedure for 1N6080US:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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