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Microchip Technology 1N6080US/TR
- Part No.:
- 1N6080US/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
1N6080US/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:6,074
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Product details
Overview
1N6080US/TR from Microsemi is an ultrafast recovery surface-mount glass power rectifier diode rated for 100 V working peak reverse voltage, 12.0 A average rectified forward current at TEC = +70°C, and 30 ns reverse recovery time. It features voidless hermetic glass packaging with Category I metallurgical bonds and is designed for high-reliability switching power supplies requiring low forward voltage (1.50 V @ 37.7 A pulsed) and high surge capability (175 A).
For engineers reviewing the 1N6080US/TR datasheet, 1N6080US/TR pinout, 1N6080US/TR application, or 1N6080US/TR equivalent, this diode serves as a critical high-surge, radiation-hardened rectifier in military-grade DC-DC converters, avionics power conditioning, and ruggedized industrial SMPS where failure tolerance and thermal robustness are mandatory.
Technical Context
This device belongs to Microsemi's ultrafast recovery rectifier family optimized for minimal reverse recovery charge and controlled avalanche behavior. Its 30 ns trr, 10.0 µA max reverse leakage at VRWM, and 5.0°C/W thermal resistance (RθJEC) enable efficient high-frequency operation under sustained thermal stress.
The hermetically sealed voidless glass package with tungsten slugs and copper end caps ensures mechanical integrity across -65°C to +155°C junction temperature range. Polarity is marked by cathode band; no surface marking on body per spec.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 100 V - Maximum continuous reverse voltage before breakdown; defines safe operating limit in bridge or flyback topologies. |
| IF(AV) @ TEC=70°C | 12.0 A - Sustained DC output current capability when mounted on engineered heatsink (EC = external case). |
| VF @ 37.7 A (pulsed) | 1.50 V - Low conduction loss during transient load conditions; reduces I²R heating in high-current pulses. |
| trr | 30 ns - Ultrafast recovery minimizes switching losses and EMI in >100 kHz SMPS designs. |
| IFSM (8.3 ms) | 175 A - Withstands severe line surges or startup inrush without degradation. |
| RθJEC | 5.0°C/W - Enables higher power dissipation with modest heatsinking; critical for compact, sealed enclosures. |
| IR @ VRWM | 10.0 µA - Low leakage preserves efficiency in high-impedance bias networks and standby circuits. |
Pinout & Package
Package: G-MELF (D-5C), hermetically sealed voidless hard glass with tungsten slugs and copper end caps (Sn/Pb finish). Cathode indicated by band. No body marking. Tape-and-reel compliant per EIA-481-B.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to input/switching node; must withstand 175 A surge and 100 V reverse blocking. |
| Cathode | Forward current exit / reverse blocking terminal | Marked by band; connects to output rail; handles full reverse voltage and low-leakage requirements. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal delamination and moisture ingress-ensures 100% reliability in vacuum, high-humidity, or radiation environments. |
| Category I metallurgical bond | Guarantees interfacial strength >20,000 psi; prevents bond lift under thermal cycling or mechanical shock. |
| Triple-layer passivation | Provides die surface protection against ionic contamination and surface conduction paths in harsh chemical exposure. |
| Controlled avalanche rating | Rated for repetitive peak reverse power; enables use in snubberless or clamped inductive switching circuits. |
| Inherent radiation hardness | Validated per MicroNote 050; suitable for space-qualified and nuclear instrumentation applications without additional shielding. |
Applications
| Aerospace Power Conversion | Military Radar Transmitter Supplies |
|---|---|
Use Scenario: DC-DC conversion in satellite bus power systems operating in vacuum and wide thermal swings. IC Role / Device Role / Timing Role: Primary output rectifier in resonant LLC converter delivering 28 V @ 10 A. Use Value: 175 A surge rating and radiation hardness ensure uninterrupted operation during solar flare events and orbital thermal cycling. | Use Scenario: High-efficiency pulse modulator supply for X-band radar transmitters requiring fast turn-off and low loss. IC Role / Device Role / Timing Role: Output rectifier in high-voltage, high-frequency switched-mode supply feeding magnetron bias rails. Use Value: 30 ns trr and 1.50 V VF reduce switching losses and thermal rise during 10–100 kHz pulse bursts. |
| Avionics Flight Control PSUs | Ruggedized Industrial SMPS |
Use Scenario: Triple-redundant 270 V DC aircraft power distribution with fault-tolerant rectification. IC Role / Device Role / Timing Role: Hermetically sealed rectifier in parallel-output bridge configuration for flight-critical actuator drivers. Use Value: Voidless glass construction and Category I bond prevent latent failures under vibration, altitude, and rapid pressure changes. | Use Scenario: Off-line SMPS in oilfield telemetry modules exposed to extreme ambient temperatures and ESD events. IC Role / Device Role / Timing Role: Input-stage rectifier in universal-input 48 V/15 A power module operating from -40°C to +85°C ambient. Use Value: 5.0°C/W RθJEC and -65°C to +155°C junction range maintain regulation stability without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Vishay VS-12EWH01-M3 | 100 V VRWM, 12 A IF(AV), 35 ns trr, TO-277 package (plastic), 1.65 V VF @ 37.7 A | Lower surge rating (120 A), no hermetic seal or radiation qualification | Preferred for cost-sensitive commercial industrial designs where MIL-spec reliability is not required. |
| ON Semiconductor MUR1220CT | 200 V VRWM, dual common-cathode configuration, TO-220AC package, 35 ns trr, 1.7 V VF | Higher voltage rating but larger footprint and plastic encapsulation; not radiation-hardened | Used when system requires >150 V reverse margin or dual-diode integration; unsuitable for vacuum or radiation environments. |
Compared with VS-12EWH01-M3 and MUR1220CT, the 1N6080US/TR delivers superior thermal performance (5.0°C/W vs ≥10°C/W), guaranteed hermeticity, and radiation tolerance-making it irreplaceable in mission-critical aerospace and defense rectification where long-term parametric stability is non-negotiable.
Availability
1N6080US/TR is available at Aetrix Electronics and suitable for aerospace power conversion, military radar transmitter supplies, and avionics flight control PSUs requiring stable component supply across extended product lifecycles and obsolescence-sensitive programs.
Supply support for 1N6080US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, discrete devices, and RF solutions for aerospace, defense, and industrial markets.
The 1N6080US/TR belongs to Microsemi's ultrafast hermetic rectifier product line, engineered specifically for applications demanding zero-failure probability under extreme environmental stress-including radiation, thermal cycling, and mechanical shock.
FAQ
What is the maximum junction temperature rating for the 1N6080US/TR?
The 1N6080US/TR has a specified junction temperature range of -65°C to +155°C. This wide operating envelope supports deployment in cryogenic avionics subsystems and high-temperature engine-mounted electronics. The 5.0°C/W thermal resistance (RθJEC) allows effective heat transfer to the external case, enabling reliable operation even at upper temperature limits when properly mounted.
Does the 1N6080US/TR have a cathode band marking?
Yes, the 1N6080US/TR uses a visible cathode band to indicate polarity, consistent with industry-standard diode marking conventions. The band is applied directly on the glass envelope. No alphanumeric markings appear on the body per specification, and polarity identification relies solely on this band for assembly verification.
Is the 1N6080US/TR suitable for radiation-hardened applications?
Yes, the 1N6080US/TR is inherently radiation-hardened as documented in Microsemi MicroNote 050. Its voidless hermetic glass construction, tungsten slug leads, and Category I metallurgical bond provide immunity to total ionizing dose (TID) and single-event effects (SEE), making it qualified for spaceflight, nuclear instrumentation, and high-altitude defense platforms without supplemental shielding.
What is the reverse recovery time (trr) specification for the 1N6080US/TR?
The 1N6080US/TR has a maximum reverse recovery time (trr) of 30 ns, measured at IF = 0.5 A, IRM = 1.0 A, and IR(REC) = 0.25 A. This ultrafast recovery characteristic minimizes switching losses and associated EMI in high-frequency (>100 kHz) power converters, especially in resonant and phase-shifted topologies used in modern avionics and radar supplies.
What package type does the 1N6080US/TR use?
The 1N6080US/TR uses the G-MELF (D-5C) package: a hermetically sealed voidless hard glass cylindrical body with tungsten slugs and copper end caps finished with Sn/Pb. Its dimensions are defined in the Microsemi datasheet, and it complies with EIA-481-B tape-and-reel standards for automated SMT placement.
1N6080US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, C
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io):
- 2A
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 37.7 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 30 ns
- Current - Reverse Leakage @ Vr:
- 10 µA @ 100 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D-5C
- Operating Temperature - Junction:
- -65°C ~ 155°C
1N6080US/TR FAQ
1.How can I place an order for 1N6080US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6080US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6080US/TR reliable?
The price and inventory of 1N6080US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6080US/TR is usually 5 days.
3.What payment methods are accepted for 1N6080US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6080US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6080US/TR?
1N6080US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6080US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6080US/TR?
For technical support, including 1N6080US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6080US/TR requirements.
6.How does Aetrix verify that 1N6080US/TR is sourced from the original manufacturer or authorized distributors?
All 1N6080US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6080US/TR meets industry standards.
7.What is the process for return or replacement of 1N6080US/TR?
All 1N6080US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N6080US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6080US/TR part is unused and in its original packaging.
Return procedure for 1N6080US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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