Microchip Technology 1N6081US

Overview

1N6081US from Microsemi is a surface-mount ultrafast recovery glass power rectifier diode rated for 150 V working peak reverse voltage, 12.0 A average rectified forward current at T_EC = +70°C, and 30 ns reverse recovery time. It features voidless hermetic glass sealing with Category I metallurgical bonds and is designed for high-reliability military and aerospace power conversion systems.

For engineers reviewing the 1N6081US datasheet, 1N6081US pinout, 1N6081US application, or 1N6081US equivalent, key selection criteria include its 150 V VRWM rating, 1.50 V forward voltage at 37.7 A pulsed test current, 175 A peak surge capability, low 5.0°C/W thermal resistance, and G-MELF (D-5C) package suitability for ruggedized SMT layouts.

Technical Context

This device operates as a unidirectional power rectifier with controlled avalanche capability and inherent radiation hardness per MicroNote 050. Its ultrafast trr of 30 ns enables efficient operation in high-frequency switching topologies such as resonant DC-DC converters and EMI-sensitive avionics supplies.

The 1N6081US uses a tungsten slug–based hermetic glass construction with copper end caps and Sn/Pb termination. Its thermal resistance of 5.0°C/W and 1100 mg mass support stable junction temperature management under sustained 12 A conduction at elevated ambient conditions.

Key Specifications

Pinout & Package

Package: G-MELF (D-5C), hermetically sealed voidless hard glass case with tungsten slugs and copper end caps with Sn/Pb finish. Cathode indicated by band. No marking. Tape-and-reel compliant per EIA-481-B.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Compared with 1N6081 and VS-12EWH06-M3, the 1N6081US uniquely combines 150 V rating, G-MELF hermetic packaging, 30 ns trr, and 5.0°C/W thermal resistance-making it irreplaceable in size-, weight-, and reliability-constrained aerospace rectifier roles.

Availability

1N6081US is available at Aetrix Electronics and suitable for aerospace power distribution, military radar transmitter supplies, satellite solar array regulators, and tactical vehicle DC-DC converters requiring stable component supply across extended lifecycle programs.

Supply support for 1N6081US includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, discrete devices, and RF solutions for defense, aerospace, and industrial markets.

The 1N6081US belongs to Microsemi's ultrafast hermetic rectifier family, engineered specifically for mission-critical power conversion where failure is not an option-emphasizing radiation tolerance, thermal robustness, and long-term hermetic integrity.

FAQ

What is the maximum working peak reverse voltage for the 1N6081US?

The 1N6081US has a maximum working peak reverse voltage (VRWM) of 150 V. This rating is guaranteed across its full operating junction temperature range of –65°C to +155°C and defines the highest continuous reverse-bias voltage the device can block without breakdown. It is validated per Microsemi's test conditions and forms the basis for selecting appropriate safety margins in high-reliability DC bus and output rectification circuits.

Does the 1N6081US have radiation hardness certification?

Yes, the 1N6081US exhibits inherent radiation hardness as documented in Microsemi MicroNote 050. While not individually certified to MIL-STD-883 methods, its voidless hermetic glass construction, tungsten slug, and Category I metallurgical bond provide proven resilience to total ionizing dose (TID) and single-event effects (SEE) typical of LEO and MEO satellite environments. Radiation performance data is derived from family-level testing and qualification.

What is the thermal resistance from junction to case for the 1N6081US?

The thermal resistance from junction to case (RθJEC) for the 1N6081US is 5.0°C/W. This value is measured under standard JEDEC conditions and reflects the device's ability to conduct heat from the silicon die through the tungsten slug to the PCB or heatsink. It enables precise thermal modeling in high-power SMT layouts where copper slug contact area and solder joint quality directly impact steady-state junction temperature.

Can the 1N6081US be used in place of the 1N6081 axial-lead version?

No-the 1N6081US is not a direct replacement for the axial-lead 1N6081. Although they share identical electrical specifications, the 1N6081US uses a surface-mount G-MELF (D-5C) package with tungsten slug thermal path, while the 1N6081 uses radial leads and higher thermal resistance. PCB layout, thermal management, and mechanical mounting differ fundamentally; substitution requires redesign of footprint, thermal pads, and assembly process.

What does the "US" suffix indicate in the 1N6081US part number?

The "US" suffix in 1N6081US denotes the surface-mount version in the G-MELF (D-5C) hermetic glass package. It distinguishes this variant from the through-hole 1N6081 (no suffix) and confirms compliance with Microsemi's voidless glass sealing, Category I metallurgical bonding, and EIA-481-B tape-and-reel packaging standards. The suffix is integral to ordering the correct form factor and reliability grade.