Semtech Corporation 1N6107

Overview

1N6107 from Semtech is a transient diverting suppressor (TDS) designed for high-energy EOS protection of 22V-rated power or I/O lines, featuring ±30kV IEC 61000-4-2 ESD immunity, 40A peak pulse current (8/20μs), and stable 27.5–28V clamping across full current and temperature range. It uses a surge-rated FET shunt architecture to maintain low dynamic resistance (20mΩ) and protects USB PD, load switch inputs, and industrial bus interfaces.

For engineers reviewing the 1N6107 datasheet, pinout, applications, or equivalent options, this device offers superior clamping stability over conventional TVS diodes-critical when protecting voltage-sensitive controllers in USB Type-C, IoT, and industrial equipment where thermal derating and voltage margin are design constraints.

Technical Context

The 1N6107 implements a precision-triggered FET-based shunt architecture: a dedicated trigger circuit activates a low-R_DS(on) MOSFET when transient voltage exceeds breakdown, enabling near-constant clamping independent of peak current magnitude. Unlike junction-based TVS diodes, its clamping voltage remains stable from −40°C to +125°C due to minimal temperature coefficient of the FET conduction path.

It operates as a unidirectional, single-line protector with three parallel input terminals (Pins 4–6) and three ground terminals (Pins 1–3), requiring all six pins to be connected for rated 40A surge handling. Its 175pF junction capacitance at 22V and 1MHz makes it suitable for DC power rails and low-speed signal lines-not high-speed data lanes.

Key Specifications

Pinout & Package

1N6107 is housed in a Pb-free, RoHS-compliant DFN package measuring 1.6 mm × 1.6 mm × 0.55 mm with 6 leads and UL 94V-0 molding compound. The package includes an exposed thermal pad not required for thermal management (energy dissipated in FET channel, not junction).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Compared with SMAJ22A, 1N6107 delivers 7–8V lower clamping at full surge current and stable performance across temperature, but requires precise PCB layout with all six pins connected. Compared with TDS2211P, 1N6107 is functionally identical-same die, same package, same marking-making TDS2211P the recommended drop-in successor.

Availability

1N6107 is available at Aetrix Electronics and suitable for USB Type-C PD systems, industrial load switch protection, and IoT power rail applications requiring stable component supply, long-term lifecycle assurance, and compliance with IEC 61000-4-2/4-4/4-5 standards.

Supply support for 1N6107 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Semtech Corporation is a U.S.-based fabless semiconductor company specializing in analog and mixed-signal ICs for precision protection, sensing, and signal integrity.

The 1N6107 belongs to Semtech's Transient Diverting Suppressor (TDS) product line-engineered to replace conventional TVS diodes in high-reliability power and interface protection where clamping stability, temperature insensitivity, and space-constrained layouts are critical.

FAQ

What is the primary protection function of the 1N6107?

The 1N6107 functions as a transient diverting suppressor that actively shunts high-energy electrical overstress (EOS) events-including ESD, EFT, and lightning surges-to ground using a precision-triggered FET. Unlike passive TVS diodes, it maintains a nearly constant clamping voltage (27.5–28V) across its full 40A surge rating and entire −40°C to +125°C operating range, making it ideal for protecting sensitive 22V-rated power rails and interfaces.

Can the 1N6107 be used on high-speed data lines like USB SuperSpeed or PCIe?

No, the 1N6107 is not suitable for high-speed data lines. Its 175pF junction capacitance at 22V and 1MHz introduces excessive signal distortion and insertion loss above ~100MHz. It is intended exclusively for DC power rails, low-speed control signals, and bus lines such as USB PD VBUS, load switch inputs, or industrial 22V auxiliary supplies-never for differential high-speed lanes like SSTX/RX or PCIe traces.

How does the 1N6107 differ from a standard TVS diode like SMAJ22A?

The 1N6107 uses a triggered FET shunt architecture, resulting in stable 27.5–28V clamping across 24–40A and −40°C to +125°C. In contrast, SMAJ22A-a junction-based TVS-clamps at ≥35.5V at 12.3A and degrades further with temperature, exceeding 38V at 125°C. The 1N6107 also achieves higher surge current (40A vs. 12.3A) in a 75% smaller DFN package without thermal derating.

Is the 1N6107 pin-compatible with other Semtech TDS devices?

The 1N6107 shares the same 6-pin DFN 1.6 mm × 1.6 mm package and pin configuration (Pins 1–3 = GND, Pins 4–6 = IN) with Semtech's TDS2211P, which is its direct, documented successor. However, it is not pin-compatible with other TDS variants like TDS1211P (12V) or TDS3311P (33V), as those retain identical pinouts but differ in internal trigger voltage and clamping behavior-requiring schematic and layout review before substitution.

What PCB layout practices are mandatory for reliable 1N6107 operation?

To ensure full 40A surge capability, all three GND pins (1, 2, 3) and all three IN pins (4, 5, 6) must be connected-no stubs or daisy-chaining. Place the 1N6107 within 5 mm of the protected connector, route IN and GND traces as short and wide as possible, and use ≥4 vias per GND pin to a solid ground plane. Avoid thermal pads: energy is dissipated in the FET channel, not the die junction.