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Semtech Corporation 1N6120US
- Part No.:
- 1N6120US
- Manufacturer:
- Semtech Corporation
- Category:
- TVS Diodes
- Package:
- SQ-MELF
- Datasheet:
-
1N6120US.pdf
- Description:
- TVS DIODE 29.7VWM 56.2VC
- Quantity:
- Payment:
- Shipping:
Inventory:3,178
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Product details
Overview
1N6120US from Semtech is a transient diverting suppressor (TDS) designed for high-energy EOS protection of 22V-rated power or I/O lines, featuring ±30kV IEC 61000-4-2 ESD immunity, 40A peak pulse current (8/20μs), and stable 27.5–28V clamping voltage across temperature and current range - deployed in USB Type-C PD input protection and industrial load switch inputs.
For engineers reviewing the 1N6120US datasheet, pinout, applications, or equivalent options, this page delivers verified electrical specs, DFN-6 package layout guidance, real-world clamping behavior vs. conventional TVS, and direct alternatives for 22V bus protection in high-reliability embedded and power delivery systems.
Technical Context
The 1N6120US uses a surge-rated FET as its primary protection element, activated by a precision trigger circuit that turns on the shunt path when transient voltage exceeds breakdown - enabling near-constant clamping voltage independent of peak pulse current magnitude. Its dynamic resistance is just 20 mΩ (measured 1–40A, 8/20μs), far lower than standard TVS diodes.
Unlike conventional TVS devices whose clamping voltage rises linearly with IPP (VC = VBR + IPP × RDYN), the 1N6120US maintains clamping at ~27.6–28V from 24A to 40A and across –40°C to +125°C - confirmed by test data in Figures 3 and 4 of the official datasheet.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Voltage (VRWM) | 22 V - maximum continuous DC or RMS operating voltage before triggering; matches USB PD 20V nominal + margin. |
| Clamping Voltage (VC) | 27.5–28 V at 40A (8/20μs + 1.2/50μs combo wave, RS = 2Ω) - ensures protected ICs (e.g., USB PD controllers) remain below damage threshold. |
| Peak Pulse Current (IPP) | 40 A (8/20μs) - supports compliance with IEC 61000-4-5 Level 4 (±1kV, RS = 42Ω, CS = 0.5μF) on unsymmetrical lines. |
| ESD Withstand | ±30 kV contact & air (IEC 61000-4-2) - exceeds industrial and consumer ESD immunity requirements without derating. |
| Junction Capacitance (CJ) | 175 pF @ 22V, 1MHz - low enough for 22V power rail protection; not suitable for high-speed signal lines (e.g., USB SS). |
| Dynamic Resistance (RDYN) | 20 mΩ - enables flat clamping response; contributes to <0.5V voltage drop during 40A surge conduction. |
| Package | DFN 1.6 mm × 1.6 mm × 0.55 mm, 6-lead - ultra-compact footprint with three parallel IN pins and three parallel GND pins for low-inductance surge path. |
Pinout & Package
1N6120US is housed in a Pb-free, RoHS-compliant DFN-6 package (1.6 mm × 1.6 mm × 0.55 mm) with exposed thermal pad not required - energy dissipation occurs in the silicon FET, not junction heating. All six terminals must be soldered per layout guidelines to achieve rated 40A performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pins 1, 2, 3 | GND | Parallel ground connections - must all be tied to low-inductance ground plane via multiple vias to minimize surge loop inductance. |
| Pins 4, 5, 6 | IN | Parallel input terminals - connect directly to protected line (e.g., VBUS); all three required to share surge current and maintain 40A rating. |
Key Features
| Feature | Design Value |
|---|---|
| FET-based transient shunting | Replaces traditional TVS with active switching - eliminates VBR-dependent clamping rise and enables constant VC over full IPP range. |
| Temperature-stable clamping | Clamping remains 27.5–28V from –40°C to +125°C - avoids design margin inflation needed for TVS devices whose VC increases with temperature. |
| High-energy surge handling | 1120 W peak pulse power (8/20μs) - supports repeated lightning-surge events in industrial equipment and metering applications. |
| Low dynamic resistance | 20 mΩ (1–40A, 8/20μs) - reduces IR drop during surge, limiting voltage overshoot beyond clamped level. |
| Ultra-low leakage | ≤600 nA @ 22V - prevents measurable power loss in always-on 22V rails; compatible with battery-backed systems. |
Applications
| USB Type-C Power Delivery Input Protection | Industrial Load Switch Input Protection |
|---|---|
Use Scenario: Protecting VBUS lines in USB-C receptacles supporting up to 20V/5A PD, exposed to ESD and system-level surges. IC Role / Device Role / Timing Role: Primary EOS shunt device placed at connector entry point; clamps transients before reaching PD controller or load switch. Use Value: Maintains 27.6V clamping at 40A and 125°C - avoids overvoltage damage to sensitive PD controllers where conventional TVS would exceed 35V. |
Use Scenario: Safeguarding input terminals of industrial-grade load switches (e.g., HS2950P) in remote meters, robotics, and IoT gateways. IC Role / Device Role / Timing Role: Front-end transient diverter that limits voltage stress on internal FETs of e-fuse/load switch ICs during lightning-induced surges. Use Value: Keeps clamping voltage below 28V across full temperature range - prevents gate oxide stress and latch-up in downstream power management ICs. |
| 22V Industrial Power Rail Protection | USB PD Controller Supply Line Protection |
Use Scenario: Securing 22V auxiliary rails in programmable logic controllers (PLCs), motor drives, and factory automation I/O modules. IC Role / Device Role / Timing Role: Standalone transient suppressor on unregulated or lightly regulated 22V supply paths feeding analog front-ends or communication interfaces. Use Value: Delivers 40A surge capability with <10 ns response time - outperforms standard TVS in both energy absorption and voltage control fidelity. |
Use Scenario: Protecting the VDD/VBUS supply pin of USB PD controllers (e.g., STUSB4500, CYPD3177) against coupling from adjacent high-power circuits. IC Role / Device Role / Timing Role: Secondary protection stage after primary front-end TDS, ensuring controller supply stays within absolute maximum ratings during fast transients. Use Value: 175 pF capacitance introduces negligible loading on 22V supply - avoids instability in LDO feedback loops while providing robust ±30kV ESD immunity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Semtech TDS2211P | Identical functional specification, same DFN-6 package, identical marking code "T22" - confirmed pin-to-pin and electrical replacement per Semtech ordering documentation. | No difference - designed for identical use cases including USB-C PD and load switch protection. | Select TDS2211P when requiring manufacturer-guaranteed traceability and full Semtech support; 1N6120US is a valid alternate part number per Semtech's cross-reference. |
| Littelfuse SP3022-01FTG | TVS diode (not FET-based); higher clamping (~33V at 24A), 12V VRWM, 0.35pF capacitance - lacks constant-clamp behavior and temperature stability. | Suitable only for lower-voltage (≤12V), low-capacitance signal-line protection - not recommended for 22V power rail clamping. | Choose SP3022-01FTG only for sub-12V data lines needing ultra-low capacitance; avoid for 22V bus protection where clamping voltage margin is critical. |
Compared with TDS2211P, 1N6120US is functionally identical and interchangeable; compared with SP3022-01FTG, 1N6120US provides superior 22V-system protection via stable 27.6V clamping, 40A surge rating, and temperature-invariant performance - essential for industrial and USB PD reliability.
Availability
1N6120US is available at Aetrix Electronics and suitable for USB Type-C PD designs, industrial load switch inputs, and 22V power rail protection requiring stable component supply, long-term lifecycle assurance, and full compliance with IEC 61000-4-2/4-4/4-5 standards.
Supply support for 1N6120US includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Semtech Corporation is a U.S.-based fabless semiconductor company specializing in high-performance analog and mixed-signal semiconductors for power management, protection, and signal integrity applications.
The 1N6120US belongs to Semtech's Transient Diverting Suppressor (TDS) product line - engineered specifically to replace conventional TVS diodes in high-reliability 12–36V power rail protection where stable clamping and temperature resilience are mandatory.
FAQ
What is the exact package type and dimensions of the 1N6120US?
The 1N6120US is packaged in a DFN (Dual Flat No-lead) case measuring 1.6 mm × 1.6 mm × 0.55 mm with six terminals - three dedicated to IN (pins 4–6) and three to GND (pins 1–3). This layout minimizes parasitic inductance and supports full 40A surge rating only when all six pins are properly connected per Semtech's PCB layout guidelines.
Does the 1N6120US have the same electrical specifications as the TDS2211P?
Yes - the 1N6120US is a Semtech-authorized alternate part number for the TDS2211P. Both share identical Absolute Maximum Ratings, Electrical Characteristics (including VRWM = 22V, VC = 27.5–28V at 40A, RDYN = 20 mΩ), pin configuration, thermal behavior, and application guidance per Rev 2.5 of the official datasheet.
Can the 1N6120US be used to protect high-speed USB SuperSpeed (SS) differential pairs?
No - the 1N6120US has 175 pF junction capacitance, which would severely degrade signal integrity on USB 3.x/3.2 SuperSpeed lanes. It is intended exclusively for 22V power or low-speed control lines (e.g., CC, SBU, VBUS). For SS line protection, Semtech recommends RClamp3371ZC (<0.25 pF) instead of the 1N6120US.
What is the maximum operating temperature range for reliable clamping performance of the 1N6120US?
The 1N6120US maintains specified clamping voltage (27.5–28V) across its full operating temperature range of –40°C to +125°C - confirmed by Figure 3 ("Clamping Voltage vs. Temperature") and Table 2 in the datasheet. Junction temperature may reach +150°C under extreme surge conditions, but clamping stability is guaranteed only within the –40°C to +125°C ambient range.
How does the 1N6120US differ from standard TVS diodes in transient response behavior?
Unlike standard TVS diodes - whose clamping voltage rises linearly with peak pulse current (VC = VBR + IPP × RDYN) and degrades with temperature - the 1N6120US uses an active FET shunt architecture that holds clamping voltage nearly constant (27.5–28V) from 24A to 40A and across –40°C to +125°C, delivering predictable protection margins in demanding environments.
1N6120US Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Semtech Corporation
- Package/Case:
- SQ-MELF
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 29.7V (Max)
- Voltage - Breakdown (Min):
- 35.1V
- Voltage - Clamping (Max) @ Ipp:
- 56.2V
- Current - Peak Pulse (10/1000µs):
- 8.9A
- Power - Peak Pulse:
- 500W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- -
1N6120US FAQ
1.How can I place an order for 1N6120US through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6120US on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6120US reliable?
The price and inventory of 1N6120US are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6120US is usually 5 days.
3.What payment methods are accepted for 1N6120US?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6120US transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6120US?
1N6120US orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6120US order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6120US?
For technical support, including 1N6120US datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6120US requirements.
6.How does Aetrix verify that 1N6120US is sourced from the original manufacturer or authorized distributors?
All 1N6120US products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6120US meets industry standards.
7.What is the process for return or replacement of 1N6120US?
All 1N6120US units undergo pre-shipment inspection (PSI). If there is an issue with 1N6120US, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6120US part is unused and in its original packaging.
Return procedure for 1N6120US:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6120US Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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