Semtech Corporation 1N6168

Overview

1N6168 from Semtech is a transient diverting suppressor (TDS) designed for high-energy EOS protection of 22V-rated I/O or power lines, featuring ±30kV IEC 61000-4-2 ESD immunity, 40A peak pulse current (8/20μs), 27.5–28V clamping voltage at 40A, and 20mΩ dynamic resistance. It protects USB Type-C power delivery buses, load switch inputs, and industrial interfaces where stable clamping under temperature and current stress is critical.

For engineers reviewing the 1N6168 datasheet, pinout, applications, or equivalent options, this device offers constant-clamp performance across –40°C to +125°C and 1A–40A surge currents-critical for USB PD, IoT, and industrial equipment designers selecting beyond-standard TVS solutions.

Technical Context

The 1N6168 uses a surge-rated FET as its primary protection element, activated by a precision trigger circuit that turns on the shunt path when transient voltage exceeds breakdown. Unlike conventional TVS diodes, its clamping voltage remains nearly flat (27.5–28V) across 24A–40A and –40°C to +125°C due to decreasing R_DS(on) under surge conditions.

It operates with a 22V reverse stand-off voltage (V_RWM), 25–27.9V breakdown (V_BR at 1mA), and low 175pF junction capacitance at 22V/1MHz-enabling use on high-speed power rails without signal integrity compromise. Its DFN 1.6×1.6×0.55mm package integrates three parallel input terminals (Pins 4–6) and three ground terminals (Pins 1–3) for low-inductance, high-current surge conduction.

Key Specifications

Pinout & Package

1N6168 is housed in a Pb-free, RoHS-compliant DFN 1.6 mm × 1.6 mm × 0.55 mm 6-lead package with exposed thermal pad not required (energy dissipated in silicon). Pin 1 is marked by laser dot; all pins must be soldered for rated surge performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Compared with SMAJ22A, 1N6168 delivers 8V lower clamping at rated current and stable performance across temperature-critical for modern 28V-tolerant controllers. Compared with TDS2211P, 1N6168 is functionally identical but reflects earlier production batch coding; both share full datasheet compliance and DFN-6 footprint.

Availability

1N6168 is available at Aetrix Electronics and suitable for USB Type-C power delivery systems, industrial load switch protection, and IoT power rail hardening requiring stable component supply and guaranteed EOS performance.

Supply support for 1N6168 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Semtech Corporation is a U.S.-based fabless semiconductor company specializing in high-performance analog and mixed-signal semiconductors for power management, protection, and signal integrity.

The 1N6168 belongs to Semtech's Transient Diverting Suppressor (TDS) product line, engineered to replace conventional TVS diodes in high-reliability 22V power and interface protection applications demanding flat clamping and thermal stability.

FAQ

What is the primary protection function of the 1N6168?

The 1N6168 functions as a transient diverting suppressor that actively shunts high-energy electrical overstress (EOS) events-including ESD, lightning surges, and EFT-to ground using a precision-triggered surge-rated FET. Unlike passive TVS diodes, it maintains a near-constant 27.5–28V clamping voltage across its full 40A surge rating and –40°C to +125°C operating range, making the 1N6168 ideal for protecting sensitive 22V power rails and interfaces.

How does the 1N6168 differ from standard TVS diodes like SMAJ22A?

The 1N6168 uses an active FET-based clamping architecture, resulting in 20mΩ dynamic resistance and flat clamping voltage (27.5–28V) up to 40A, whereas SMAJ22A-a standard TVS-exhibits rising clamping (35.5V at 12.3A) due to fixed junction resistance. The 1N6168 also sustains clamping stability over temperature, while SMAJ22A's V_C increases significantly above 25°C. These differences make the 1N6168 uniquely suited for 28V-tolerant ICs in thermally demanding environments.

What is the correct PCB layout practice for the 1N6168?

For optimal 1N6168 performance, place the device within 5 mm of the protected connector. Connect all three IN pins (4–6) via a single short, wide trace to the protected line, and tie all three GND pins (1–3) directly to a solid ground plane using ≥four 0.3mm vias. Avoid thermal pads or isolated copper-energy is dissipated in the silicon, not the package. This layout minimizes parasitic inductance and ensures full 40A surge capability.

Is the 1N6168 compatible with automated SMT assembly processes?

Yes, the 1N6168 is fully compatible with standard SMT reflow processes. Its DFN 1.6×1.6×0.55mm package meets IPC-7351B standards, supports lead-free soldering (JEDEC J-STD-020 profile), and carries RoHS/WEEE and UL 94V-0 certifications. The device is supplied in 7-inch tape-and-reel format (3,000 units/reel), with laser-marked "T22" code and pin-1 dot for automated optical recognition.

Does the 1N6168 require external bias or control signals to operate?

No, the 1N6168 is a fully autonomous, passive-protection device requiring no external power, bias, or control signals. Its internal precision trigger circuit monitors voltage across the IN-to-GND path and automatically activates the shunt FET when transient thresholds are exceeded. This self-contained operation makes the 1N6168 simple to integrate-just connect Pins 1–3 to ground and Pins 4–6 to the line needing protection.