STMicroelectronics 1N6263
- Part No.:
- 1N6263
- Manufacturer:
- STMicroelectronics
- Category:
- Single Diodes
- Package:
- DO-204AH, DO-35, Axial
- Datasheet:
-
1N6263.pdf
- Description:
- DIODE SCHOTTKY 60V 15MA DO35
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
1N6263 from STMicroelectronics is a small-signal Schottky diode optimized for UHF/VHF detection and ultrafast pulse applications, featuring 60 V repetitive peak reverse voltage (VRRM), 15 mA forward continuous current (IF), 0.41 V forward voltage at 1 mA, 2.2 pF junction capacitance at 0 V, and 100 ps reverse recovery time (τ).
For engineers reviewing the 1N6263 datasheet, 1N6263 pinout, 1N6263 application, or 1N6263 equivalent, key selection criteria include low VF for signal detection sensitivity, sub-100 ps switching for pulse fidelity, DO-35 package thermal resistance (Rth(j-a) = 400 °C/W), and stable leakage (<0.2 µA at 50 V) across -65 to 200 °C junction temperature range.
Technical Context
This diode employs a metal-to-silicon Schottky junction enabling low turn-on voltage and minimal minority-carrier storage. Its ultrafast 100 ps recovery time supports high-frequency demodulation and narrow-pulse rectification without tail current distortion.
Designed for operation up to 200 °C junction temperature, it maintains stable reverse leakage (≤0.2 µA at VR = 50 V) and capacitance (2.2 pF at VR = 0 V, f = 1 MHz), making it suitable for broadband RF detector front-ends where dynamic range and thermal resilience are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 60 V - Maximum repetitive reverse voltage before breakdown; sets upper limit for RF signal swing in detector circuits. |
| IF (continuous) | 15 mA at Ta = 25°C - Sustained forward current capability; defines power handling in CW detection paths. |
| VF | 0.41 V at IF = 1 mA - Low forward drop improves sensitivity in weak-signal RF detection and zero-bias operation. |
| Cj | 2.2 pF at VR = 0 V, f = 1 MHz - Junction capacitance determines high-frequency impedance and tuning range in resonant detector stages. |
| τ | 100 ps - Reverse recovery time measured by Krakauer method; enables clean pulse edge response up to ~3.5 GHz bandwidth. |
| IR | 0.2 µA at VR = 50 V, Ta = 25°C - Low leakage preserves DC bias stability and minimizes noise floor in precision detector outputs. |
Pinout & Package
DO-35 glass axial package with cathode identified by a clear ring marking at one end; leads are tinned copper alloy, weight 0.15 g, maximum lead temperature 230 °C for 10 s soldering at 4 mm from case.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to RF input or bias source in series-detector configurations; low VF ensures minimal insertion loss. |
| Cathode | Forward current exit / reverse voltage reference | Marked with ring; tied to ground or load in shunt-detector topologies; low Cj maintains high-frequency isolation. |
Key Features
| Feature | Design Value |
|---|---|
| Ultrafast switching | 100 ps reverse recovery time enables accurate pulse shaping and minimal timing jitter in digital pulse conditioning. |
| Low forward voltage | 0.41 V at 1 mA allows reliable zero-bias detection of weak RF signals without external biasing circuitry. |
| Broad temperature range | Junction temperature rating of -65 to 200 °C supports operation in harsh environments including aerospace and industrial RF modules. |
| Controlled junction capacitance | 2.2 pF at 0 V reverse bias provides predictable impedance matching in VHF/UHF tuned circuits and mixer LO injection paths. |
Applications
| UHF/VHF Signal Detector | Pulse Width Modulation (PWM) Feedback Sensing |
|---|---|
Use Scenario: Demodulating AM/FM signals in 30–3000 MHz receiver front-ends where low VF and minimal Cj preserve signal integrity. IC Role / Device Role / Timing Role: Passive detector diode converting RF envelope to baseband DC/low-frequency output. Use Value: 0.41 V VF and 2.2 pF Cj enable >60 dB dynamic range and <1 ns rise-time response in crystal-limited detectors. | Use Scenario: Sampling fast-rising PWM edges in isolated gate driver feedback loops for real-time duty-cycle monitoring. IC Role / Device Role / Timing Role: High-speed sampling diode capturing transient voltage peaks across sense resistors or transformers. Use Value: 100 ps τ ensures faithful capture of <5 ns pulse edges without overshoot or recovery lag in closed-loop control systems. |
| RF Power Monitor Diode | Low-Power Zero-Bias Detector |
Use Scenario: Measuring forward/reflected RF power in antenna couplers and solid-state amplifier protection circuits. IC Role / Device Role / Timing Role: Precision rectifier element converting RF sample voltages to proportional DC levels for ADC input. Use Value: Stable 0.2 µA IR at 50 V and Rth(j-a) = 400 °C/W allow calibrated power measurement over wide temperature and power ranges. | Use Scenario: Battery-powered IoT sensor nodes requiring passive RF energy harvesting or wake-up signal detection without bias supply. IC Role / Device Role / Timing Role: Self-powered envelope detector generating logic-level triggers from ambient RF transmissions. Use Value: Sub-0.5 V VF threshold and 15 mA IF rating support reliable activation from µW-level RF sources at room and elevated temperatures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode detection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5711 | VRRM = 70 V, VF = 0.45 V @ 1 mA, Cj = 2.5 pF, τ = 500 ps | Higher VRRM but slower recovery limits use above 500 MHz | Select when higher reverse margin is needed and bandwidth ≤1 GHz suffices. |
| HSMS-2850 | VRRM = 7 V, VF = 0.32 V @ 1 mA, Cj = 0.3 pF, τ = 100 ps, SOT-23 package | Lower VRRM and surface-mount form factor restricts use to low-voltage, PCB-integrated RF paths | Select for compact, high-frequency (>3 GHz) PCB designs where board space and parasitics dominate. |
Compared with 1N5711 and HSMS-2850, the 1N6263 uniquely balances 60 V VRRM, 100 ps τ, and DO-35 robustness-making it optimal for wide-dynamic-range UHF detector modules requiring thermal resilience and through-hole reliability.
Availability
1N6263 is available at Aetrix Electronics and suitable for UHF/VHF detection, RF power monitoring, pulse edge sensing, and zero-bias energy harvesting applications requiring stable component supply across extended temperature ranges.
Supply support for 1N6263 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, and microcontroller solutions for industrial, automotive, and consumer markets.
The 1N6263 belongs to ST's legacy small-signal Schottky diode product line, engineered specifically for high-frequency RF detection and ultrafast pulse applications demanding low VF, controlled Cj, and wide thermal operating range.
FAQ
What is the maximum junction temperature for continuous operation of the 1N6263?
The 1N6263 has a specified junction temperature range of -65 to 200 °C. It is rated for continuous operation up to 200 °C, supported by its 400 °C/W junction-to-ambient thermal resistance under standard DO-35 mounting conditions with 4 mm lead length and infinite heatsink assumptions.
Can the 1N6263 be used in zero-bias detector circuits?
Yes-the 1N6263 is explicitly designed for zero-bias operation, with a typical forward voltage of only 0.41 V at 1 mA and low junction capacitance (2.2 pF). Its low VF and minimal leakage (<0.2 µA at 50 V) enable reliable RF envelope detection without external bias, especially in VHF/UHF receivers and energy-harvesting sensors.
How does the 100 ps reverse recovery time impact high-frequency performance?
The 100 ps reverse recovery time (measured via Krakauer method) directly enables operation beyond 3 GHz in pulse and RF detection applications. It minimizes charge storage effects and recovery overshoot, preserving signal fidelity in narrow-pulse conditioning and high-speed demodulation where longer τ would distort leading/trailing edges.
Is the DO-35 package suitable for reflow soldering?
No-the DO-35 package is intended for wave or hand soldering only. The datasheet specifies a maximum lead temperature of 230 °C for 10 seconds at 4 mm from the case. Reflow profiles exceed this thermal limit and risk glass-to-metal seal failure; ST recommends traditional through-hole soldering methods for reliable assembly.
1N6263 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- DO-204AH, DO-35, Axial
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 60 V
- Current - Average Rectified (Io):
- 15mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 15 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 200 nA @ 50 V
- Capacitance @ Vr, F:
- 2.2pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-35
- Operating Temperature - Junction:
- -65°C ~ 200°C
1N6263 FAQ
1.How can I place an order for 1N6263 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6263 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6263 reliable?
The price and inventory of 1N6263 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6263 is usually 5 days.
3.What payment methods are accepted for 1N6263?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6263 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6263?
1N6263 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6263 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6263?
For technical support, including 1N6263 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6263 requirements.
6.How does Aetrix verify that 1N6263 is sourced from the original manufacturer or authorized distributors?
All 1N6263 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6263 meets industry standards.
7.What is the process for return or replacement of 1N6263?
All 1N6263 units undergo pre-shipment inspection (PSI). If there is an issue with 1N6263, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6263 part is unused and in its original packaging.
Return procedure for 1N6263:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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