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Diodes Incorporated 1N6263W-7-F
- Part No.:
- 1N6263W-7-F
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Diodes
- Package:
- SOD-123
- Datasheet:
-
1N6263W-7-F.pdf
- Description:
- DIODE SCHOTTKY 60V 15MA SOD123
- Quantity:
- Payment:
- Shipping:
Inventory:40,667
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Product details
Overview
1N6263W-7-F from Diodes Incorporated is a surface-mount Schottky barrier diode rated for 60 V peak repetitive reverse voltage, 15 mA forward continuous current, and 0.41 V forward voltage at 1.0 mA - optimized for low-loss signal rectification in space-constrained RF and portable power management circuits.
For engineers reviewing the 1N6263W-7-F datasheet, 1N6263W-7-F pinout, 1N6263W-7-F application, or 1N6263W-7-F equivalent, key selection criteria include its 1.0 ns reverse recovery time, 2.2 pF junction capacitance at 0 V, guard ring construction for transient immunity, and SOD123 package compatibility with high-speed automated assembly.
Technical Context
This Schottky diode employs a planar silicon structure with guard ring termination to suppress edge breakdown and improve surge robustness. Its low 0.41 V forward drop at 1 mA and 1.0 V at 15 mA enables efficient signal clamping and RF detection without significant DC bias loss.
The device achieves 1.0 ns reverse recovery time and 2.2 pF total capacitance at 0 V/1 MHz - critical for preserving signal integrity in UHF receiver front-ends and high-frequency sampling circuits where parasitic charge storage must be minimized.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 60 V - supports blocking up to 60 V repetitive reverse voltage in signal routing or ESD protection paths |
| IF | 15 mA - continuous forward current rating suitable for low-power detector, clamp, and bias injection circuits |
| VFM @ 1 mA | 0.41 V - enables low-threshold signal rectification with minimal forward conduction loss |
| trr | 1.0 ns - ensures minimal switching delay and overshoot in RF envelope detection and fast pulse steering |
| CT @ 0 V | 2.2 pF - maintains high impedance above ~700 MHz, preserving bandwidth in 50 Ω RF signal paths |
| IRM @ 50 V | 200 nA - guarantees negligible leakage-induced offset drift in precision analog sampling nodes |
| RθJA | 300 °C/W - thermal resistance measured on FR-4 board; limits self-heating under sustained 15 mA operation |
Pinout & Package
Package: SOD123 - surface-mount plastic case (1.55 mm × 2.65 mm × 1.05 mm), cathode-banded polarity, matte tin-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry node | Connected to lower-potential side of signal path; enables low-VF conduction when biased positive relative to cathode |
| Cathode | Forward current exit node / reverse-blocking terminal | Marked by band; ties to higher-potential rail or AC-coupled node; blocks >60 V reverse transients |
Key Features
| Feature | Design Value |
|---|---|
| Guard ring construction | Suppresses edge avalanche, enabling stable 60 V VRRM operation without premature breakdown under transient stress |
| Low reverse capacitance | 2.2 pF at 0 V allows use in 900 MHz ISM-band receivers without degrading Q-factor or insertion loss |
| Fast switching speed | 1.0 ns trr supports accurate demodulation of 500+ MHz RF carriers in envelope detectors |
| SOD123 footprint | Standardized 1.55 mm × 2.65 mm outline enables drop-in replacement and compatibility with IPC-7351B Class A pad layouts |
| Lead-free & green compliance | Fully RoHS 3 (2015/863/EU) and halogen-free (<900 ppm Br/Cl, <1000 ppm Sb) - meets automotive and medical PCB assembly requirements |
Applications
| RF Envelope Detection | Low-Power Signal Clamping |
|---|---|
Use Scenario: Demodulating AM signals in sub-GHz wireless sensor transceivers. IC Role / Device Role / Timing Role: Schottky detector diode converting RF carrier amplitude into baseband envelope voltage. Use Value: 0.41 V VFM at 1 mA ensures usable output swing even with weak -20 dBm input signals. | Use Scenario: Protecting ADC inputs from overvoltage during hot-swap events in battery-powered data loggers. IC Role / Device Role / Timing Role: Low-capacitance clamp limiting input to 0.4 V above supply rail. Use Value: 2.2 pF CT minimizes loading on high-impedance sensor outputs prior to anti-alias filtering. |
| High-Speed Pulse Steering | DC Bias Injection |
Use Scenario: Routing trigger pulses between FPGA I/O banks while isolating ground domains. IC Role / Device Role / Timing Role: Fast-recovery switch directing nanosecond-scale logic edges with minimal jitter. Use Value: 1.0 ns trr prevents pulse broadening or false triggering in 100+ MHz timing paths. | Use Scenario: Injecting DC bias into RF amplifier gate nodes without disturbing matching networks. IC Role / Device Role / Timing Role: Low-leakage series element providing stable bias current path. Use Value: 200 nA IRM at 50 V avoids measurable shift in amplifier operating point across temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAT54W-7-F | 40 V VRRM, 200 mA IF, 0.33 V VFM @ 10 mA - higher current but lower voltage rating | Preferred for general-purpose clamping in 3.3 V logic rails; unsuitable for 50 V signal blocking | Select when forward current exceeds 15 mA and reverse voltage stays below 40 V |
| SB120-E3/54 | 200 V VRRM, 1 A IF, 0.85 V VFM @ 1 A - higher voltage/current but slower (5 ns trr) and larger (DO-214AA) | Used in power supply OR-ing and flyback snubbing; incompatible with RF or SMT miniaturization | Choose only for high-voltage, high-current rectification where speed and size are secondary |
Compared with BAT54W-7-F and SB120-E3/54, the 1N6263W-7-F uniquely balances 60 V blocking, sub-nanosecond switching, and SOD123 miniaturization - making it optimal for RF signal path conditioning where voltage margin, speed, and board area are simultaneously constrained.
Availability
1N6263W-7-F is available at Aetrix Electronics and suitable for RF envelope detection, low-power signal clamping, high-speed pulse steering, and DC bias injection requiring stable component supply across industrial IoT, medical wearables, and test instrumentation programs.
Supply support for 1N6263W-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The 1N6263W belongs to Diodes' precision Schottky diode product line, engineered specifically for high-frequency signal integrity applications including RF detection, ultra-low-leakage clamping, and fast-switching bias control in compact portable electronics.
FAQ
What is the maximum reverse voltage this diode can block reliably?
The 1N6263W-7-F has a peak repetitive reverse voltage (VRRM) rating of 60 V, verified per JEDEC test conditions. It maintains stable blocking behavior up to this limit with ≤200 nA leakage at 50 V, and its guard ring construction prevents edge-initiated breakdown under transient stress.
Does this diode support automated pick-and-place assembly?
Yes - the SOD123 package of the 1N6263W-7-F conforms to IPC-7351B standard dimensions (1.55 mm × 2.65 mm), features matte tin-plated terminals compatible with lead-free reflow profiles, and carries moisture sensitivity level 1 certification for uninterrupted SMT processing without baking.
How does its 1.0 ns reverse recovery time impact RF circuit performance?
A 1.0 ns trr minimizes minority-carrier storage delay, reducing distortion in envelope detection of UHF signals (e.g., 868–915 MHz ISM bands). This enables accurate amplitude tracking without pulse rounding or baseline droop in fast-modulated waveforms.
Is this part qualified for automotive applications?
The 1N6263W-7-F is not AEC-Q101 qualified. Diodes Incorporated offers automotive-grade variants (e.g., 1N6263WQ-7-F) with PPAP documentation and IATF 16949 manufacturing - contact Diodes directly for qualified versions required in vehicle subsystems.
1N6263W-7-F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOD-123
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 60 V
- Current - Average Rectified (Io):
- 15mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 15 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 1 ns
- Current - Reverse Leakage @ Vr:
- 200 nA @ 50 V
- Capacitance @ Vr, F:
- 2.2pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-123
- Operating Temperature - Junction:
- -55°C ~ 125°C
1N6263W-7-F FAQ
1.How can I place an order for 1N6263W-7-F through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6263W-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6263W-7-F reliable?
The price and inventory of 1N6263W-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6263W-7-F is usually 5 days.
3.What payment methods are accepted for 1N6263W-7-F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6263W-7-F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6263W-7-F?
1N6263W-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6263W-7-F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6263W-7-F?
For technical support, including 1N6263W-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6263W-7-F requirements.
6.How does Aetrix verify that 1N6263W-7-F is sourced from the original manufacturer or authorized distributors?
All 1N6263W-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6263W-7-F meets industry standards.
7.What is the process for return or replacement of 1N6263W-7-F?
All 1N6263W-7-F units undergo pre-shipment inspection (PSI). If there is an issue with 1N6263W-7-F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6263W-7-F part is unused and in its original packaging.
Return procedure for 1N6263W-7-F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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