Vishay General Semiconductor - Diodes Division 1N6268AHE3_B/C
- Part No.:
- 1N6268AHE3_B/C
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1N6268AHE3_B/C.pdf
- Description:
- 1.5KW,7.5V 5%,UNIDIR,AXIAL TVS
- Quantity:
- Payment:

- Shipping:

Inventory:5,555
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Product details
Overview
1N6268AHE3_B/C from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode designed for primary-side overvoltage protection in power rails and signal lines. It features a 7.13 V to 7.88 V breakdown voltage (VBR) at 10 mA, 6.40 V standoff voltage (VWM), 11.3 V clamping voltage (VC) at 133 A peak pulse current, 1500 W peak pulse power (10/1000 µs), and operates across –55 °C to +175 °C junction temperature. It is used to protect MOSFETs, ICs, and sensor interfaces in automotive and industrial power supplies.
For engineers reviewing the 1N6268AHE3_B/C datasheet, 1N6268AHE3_B/C pinout, 1N6268AHE3_B/C application, or 1N6268AHE3_B/C equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance (RθJL = 15.4 °C/W), JEDEC 1.5KE package dimensions, and real-world clamping behavior under transient surge conditions.
Technical Context
This unidirectional TVS diode uses a glass-passivated silicon junction optimized for fast response (<1 ns) and low incremental surge resistance. Its clamping action begins at VBR ≥ 7.13 V and limits transient energy to ≤11.3 V at 133 A, enabling robust protection of 5 V–12 V logic and power stages without crowbar triggering.
Rated for 1500 W peak pulse power with 0.01 % duty cycle (10/1000 µs waveform), it sustains repetitive surges when thermally anchored via leads (RθJL = 15.4 °C/W). The matte tin-plated leads meet J-STD-002 solderability and JESD 201 Class 2 whisker resistance requirements per HE3 suffix.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 7.13 V / 7.88 V at 10 mA - defines precise conduction onset for predictable overvoltage thresholding |
| VWM | 6.40 V - maximum continuous reverse operating voltage before leakage exceeds 500 µA |
| VC @ IPPM | 11.3 V at 133 A - clamped voltage during worst-case 1500 W transient, limiting downstream stress |
| PPPM | 1500 W (10/1000 µs) - single-pulse surge handling capacity compatible with IEC 61000-4-5 Level 4 |
| IFSM | 200 A (8.3 ms half-sine) - surge current rating for unidirectional forward conduction during fault events |
| TJ range | –55 °C to +175 °C - enables deployment in under-hood automotive and high-temp industrial environments |
| RθJL | 15.4 °C/W - thermal resistance from junction to lead, critical for PCB copper pour design and power derating |
Pinout & Package
1N6268AHE3_B/C is housed in the industry-standard axial-lead Case Style 1.5KE package (JEDEC DO-201AD), with cathode indicated by a color band on the body. Leads are matte tin-plated and compliant with J-STD-002 solderability and JESD 201 Class 2 whisker resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point during surge conduction | Connected to protected circuit ground or low-side return path; must be routed with low-inductance trace |
| Cathode | Reverse-biased terminal during normal operation; clamping node during transients | Connected to protected line (e.g., 5 V rail); color band identifies this terminal for correct orientation |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Enables stable VBR tolerance (±5 %) and long-term reliability under thermal cycling and humidity |
| AEC-Q101 qualified (HE3_B variant) | Validated for automotive powertrain and body electronics per stress test requirements including HTOL and TC |
| 1500 W peak pulse power | Supports IEC 61000-4-5 surge immunity up to 4 kV (line-earth) without external series impedance |
| Clamping ratio (VC/VBR) ≈ 1.49 | Low overvoltage margin ensures minimal headroom stress on downstream 12 V-rated components |
| JESD 201 Class 2 whisker resistance | Prevents tin whisker growth in high-reliability applications where >10-year field life is required |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 12 V battery-fed ECUs against load dump (ISO 7637-2 Pulse 5a) and alternator switching transients. IC Role / Device Role / Timing Role: Primary shunt clamp placed directly across input filter capacitor, conducting within <1 ns to limit voltage to ≤11.3 V. Use Value: Prevents latch-up or gate oxide rupture in MCU power management ICs and CAN transceivers without adding series resistance. |
Use Scenario: Safeguarding analog front-end inputs of pressure/temperature sensors connected to long harnesses in factory automation. IC Role / Device Role / Timing Role: Unidirectional TVS placed between sensor signal line and ground, clamping ESD (IEC 61000-4-2) and inductive kickback. Use Value: Maintains signal integrity below 12 V while surviving ±15 kV contact discharge due to sub-1 ns response and low VC. |
| Consumer DC Power Adapter Output | Telecom Line Card Surge Protection |
Use Scenario: Secondary-side overvoltage suppression on 5 V/9 V USB-C PD adapter outputs exposed to cable fault conditions. IC Role / Device Role / Timing Role: Fast-acting clamp parallel to output capacitor, triggered only during overvoltage events exceeding 6.4 V. Use Value: Eliminates need for secondary feedback loop reconfiguration; protects downstream USB-PD controllers and Type-C port ICs. |
Use Scenario: Front-end protection of Ethernet PHY power pins (3.3 V or 5 V) against lightning-induced surges on PoE-enabled line cards. IC Role / Device Role / Timing Role: Standoff-rated TVS (VWM = 6.4 V) placed before DC-DC converter input to absorb 10/1000 µs transients. Use Value: Enables compliance with GR-1089-CORE Level 3 (4 kV differential mode) without derating converter input capacitors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ7.0A | DO-214AA package (SMB), lower PPPM = 600 W, VBR = 7.78–8.60 V, VC = 12.0 V @ 50 A | Lower surge rating suits consumer-grade 5 V rails; not AEC-Q101 qualified | Select when board space is constrained and 1500 W capability is unnecessary; verify thermal layout for RθJA = 110 °C/W |
| 1.5KE7.5AHE3_B | Same 1.5KE package, identical VBR/VC specs, but base P/N lacks "_B/C" revision coding and may not include latest AEC-Q101 lot traceability | Functionally interchangeable in non-automotive designs where full automotive qualification is not mandated | Choose for cost-sensitive industrial applications where AEC-Q101 documentation is not required; same electrical performance and footprint |
Compared with SMBJ7.0A, 1N6268AHE3_B/C delivers 2.5× higher surge power and automotive qualification; compared with 1.5KE7.5AHE3_B, it adds documented B/C revision control and full AEC-Q101 lot-level validation for safety-critical deployments.
Availability
1N6268AHE3_B/C is available at Aetrix Electronics and suitable for automotive ECU power protection, industrial sensor interface hardening, and telecom line card surge suppression requiring stable component supply across multi-year production cycles.
Supply support for 1N6268AHE3_B/C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The 1N6268AHE3_B/C belongs to Vishay's TRANSZORB® TVS family, engineered specifically for high-energy transient suppression in harsh environments where fast response, stable clamping, and AEC-Q101 compliance are mandatory.
FAQ
What is the exact breakdown voltage range for 1N6268AHE3_B/C at 10 mA test current?
The 1N6268AHE3_B/C has a guaranteed breakdown voltage (VBR) range of 7.13 V to 7.88 V when measured at 10 mA DC test current, per Vishay Document Number 88301. This tight tolerance supports precise overvoltage thresholding in 5 V–12 V systems without requiring additional margining in design.
Is 1N6268AHE3_B/C qualified to AEC-Q101, and what does the "HE3_B/C" suffix indicate?
Yes, 1N6268AHE3_B/C is AEC-Q101 qualified per Vishay's documentation. The "HE3" denotes RoHS-compliant construction with JESD 201 Class 2 whisker resistance, while "_B/C" specifies the revision level confirming full AEC-Q101 lot traceability and test reporting-critical for automotive Tier 1 suppliers.
What is the clamping voltage of 1N6268AHE3_B/C under maximum rated surge current?
At its peak pulse current (IPPM) of 133 A (10/1000 µs waveform), the 1N6268AHE3_B/C clamps to a maximum of 11.3 V. This value is measured per standard test conditions and defines the upper voltage limit imposed on protected circuits during worst-case transients.
Can 1N6268AHE3_B/C be used in bidirectional configurations?
No, 1N6268AHE3_B/C is a unidirectional TVS diode. Bidirectional variants in this family use the "CA" suffix (e.g., 1.5KE7.5CA). Using 1N6268AHE3_B/C in reverse-biased AC applications would result in forward conduction and failure; always verify polarity marking (cathode band) during placement.
What is the thermal resistance from junction to lead (RθJL) for 1N6268AHE3_B/C, and why does it matter?
The 1N6268AHE3_B/C has a typical junction-to-lead thermal resistance (RθJL) of 15.4 °C/W. This parameter governs how effectively heat from transient power dissipation transfers into PCB copper or heatsinking leads-directly impacting safe surge repetition rate and long-term reliability in high-ambient-temperature environments.
1N6268AHE3_B/C Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 6.4V
- Voltage - Breakdown (Min):
- 7.13V
- Voltage - Clamping (Max) @ Ipp:
- 11.3V
- Current - Peak Pulse (10/1000µs):
- 133A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1N6268AHE3_B/C FAQ
1.How can I place an order for 1N6268AHE3_B/C through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6268AHE3_B/C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6268AHE3_B/C reliable?
The price and inventory of 1N6268AHE3_B/C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6268AHE3_B/C is usually 5 days.
3.What payment methods are accepted for 1N6268AHE3_B/C?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6268AHE3_B/C transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6268AHE3_B/C?
1N6268AHE3_B/C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6268AHE3_B/C order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6268AHE3_B/C?
For technical support, including 1N6268AHE3_B/C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6268AHE3_B/C requirements.
6.How does Aetrix verify that 1N6268AHE3_B/C is sourced from the original manufacturer or authorized distributors?
All 1N6268AHE3_B/C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6268AHE3_B/C meets industry standards.
7.What is the process for return or replacement of 1N6268AHE3_B/C?
All 1N6268AHE3_B/C units undergo pre-shipment inspection (PSI). If there is an issue with 1N6268AHE3_B/C, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6268AHE3_B/C part is unused and in its original packaging.
Return procedure for 1N6268AHE3_B/C:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6268AHE3_B/C Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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