My Inquiry
My Account
Vishay General Semiconductor - Diodes Division 1N6269AHE3_B/C
- Part No.:
- 1N6269AHE3_B/C
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1N6269AHE3_B/C.pdf
- Description:
- 1.5KW,8.2V 5%,UNIDIR,AXIAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:4,528
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N6269AHE3_B/C from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode designed for robust overvoltage protection in power and signal lines. It features a 8.2 V breakdown voltage (VBR = 7.79–8.61 V at 10 mA), 7.02 V standoff voltage (VWM), 12.1 V clamping voltage (VC at 124 A), 1500 W peak pulse power (10/1000 µs), and operates across –55 °C to +175 °C junction temperature. It is used to protect MOSFETs, ICs, and sensor interfaces against inductive switching transients and lightning-induced surges.
For engineers reviewing the 1N6269AHE3_B/C datasheet, 1N6269AHE3_B/C pinout, 1N6269AHE3_B/C application, or 1N6269AHE3_B/C equivalent, this part delivers verified bidirectional-capable TVS performance with AEC-Q101 qualification (HE3 suffix), RoHS-compliant matte tin plating, and JESD 201 Class 2 whisker resistance - critical for automotive, industrial, and telecom surge protection design.
Technical Context
This unidirectional TVS diode uses a glass-passivated silicon junction to achieve sub-nanosecond response time (<1 ns) and low incremental surge resistance. Its clamping behavior is characterized by a tightly controlled VC/VBR ratio of ~1.55 and a temperature coefficient of +0.065 %/°C, ensuring stable protection threshold across operating temperatures.
The device is rated for 200 A non-repetitive forward surge current (8.3 ms half-sine), supports 6.5 W steady-state power dissipation on infinite heatsink at TL = 75 °C, and exhibits 75 °C/W junction-to-ambient thermal resistance - confirming suitability for high-energy transient suppression without active cooling in compact layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 7.79 V / 8.61 V at 10 mA - defines precise voltage threshold where clamping initiates under standardized test conditions |
| VWM | 7.02 V - maximum continuous reverse working voltage before leakage exceeds 200 µA; sets safe operating margin below breakdown |
| VC at IPPM | 12.1 V at 124 A - clamped voltage during 1500 W transient, limiting downstream component stress to ≤12.1 V |
| PPPM | 1500 W (10/1000 µs waveform) - enables single-device protection against high-energy surges common in automotive load-dump or industrial switching events |
| TJ max. | +175 °C - allows operation in under-hood automotive or high-temperature industrial environments without derating |
| IFSM | 200 A (8.3 ms half-sine) - supports robust handling of repetitive inductive kickback without bond-wire failure |
| Package | Case Style 1.5KE - axial-leaded DO-201AD package with 0.375" lead length, UL 94 V-0 molded epoxy body |
Pinout & Package
1N6269AHE3_B/C is housed in a DO-201AD (Case Style 1.5KE) axial-leaded package. The cathode is marked by a color band on the body; polarity must be observed in series protection configurations.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point in forward bias; connected to protected circuit ground or low-side reference | Enables unidirectional clamping from line-to-ground; must be tied to lowest potential node in protection path |
| Cathode | Current exit point in forward bias; marked by color band; connected to protected line or signal | Defines clamping direction: reverse-biased during overvoltage, shunting surge current to ground through cathode |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Ensures stable VBR tolerance and long-term reliability under humidity and thermal cycling stress |
| AEC-Q101 qualified (HE3 suffix) | Validated for automotive-grade use including engine control units, body electronics, and ADAS sensor interfaces |
| 1500 W peak pulse power | Provides single-device protection against ISO 7637-2 Pulse 5a (load dump) and IEC 61000-4-5 Level 4 surges |
| JESD 201 Class 2 whisker resistance | Eliminates risk of tin whisker growth in high-reliability applications requiring >10-year field life |
| UL 94 V-0 molding compound | Meets flammability safety requirements for enclosed industrial and telecom equipment enclosures |
Applications
| Automotive Power Line Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: Protecting 12 V battery-fed ECUs from load-dump transients up to 35 V and 100 ms duration. IC Role / Device Role / Timing Role: Unidirectional TVS placed between power rail and chassis ground to clamp surges before they reach LDOs or microcontrollers. Use Value: Limits peak rail voltage to 12.1 V during 124 A transients, preventing latch-up or gate oxide damage in downstream semiconductors. |
Use Scenario: Shielding 4–20 mA current-loop sensors in factory automation from ESD and inductive coupling on long cable runs. IC Role / Device Role / Timing Role: Line-to-ground TVS on analog input side, absorbing fast-rising transients induced by nearby motor drives or relay switching. Use Value: Sub-1 ns response ensures clamping occurs before sensitive op-amps or ADC front-ends experience overvoltage stress. |
| Telecom DC Power Feeds | Consumer Device USB Port Protection |
|
Use Scenario: Safeguarding PoE-powered network switches and base stations against lightning-induced surges on 48 V DC feeds. IC Role / Device Role / Timing Role: Primary-level TVS on input bulk capacitor rail, coordinated with secondary GDT or MOV stages. Use Value: 1500 W rating handles multi-kA surge currents per IEC 61000-4-5 Combination Wave testing without degradation. |
Use Scenario: Adding robustness to USB-C power delivery circuits against hot-plug transients and accidental 20 V misconnection. IC Role / Device Role / Timing Role: Unidirectional TVS on VBUS line, placed upstream of USB PD controller and buck converter. Use Value: 7.02 V VWM allows normal 5–20 V PD operation while clamping faults to ≤12.1 V, preserving port functionality. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ8.0A | Lower PPPM (400 W), smaller SMA package (SOD-123), VBR = 8.89–9.82 V, VC = 13.6 V at 29.4 A | Better suited for space-constrained PCBs with lower-energy threats (IEC 61000-4-2 ESD only); not rated for load-dump | Select when board area is critical and surge energy is limited to <500 W; verify thermal margin due to higher RθJA (~150 °C/W) |
| 1.5KE8.2A-E3/54 | Same electrical specs and DO-201AD package, but commercial-grade (E3 suffix), no AEC-Q101 qualification or JESD 201 Class 2 whisker test | Acceptable for non-automotive industrial or consumer applications where automotive reliability is not mandated | Choose for cost-sensitive designs where AEC-Q101 and enhanced whisker resistance are unnecessary; identical footprint and solder profile |
Compared with 1N6269AHE3_B/C, SMAJ8.0A trades surge capacity and automotive qualification for compact size, while 1.5KE8.2A-E3/54 matches form-fit-function but omits AEC-Q101 validation and whisker mitigation - making 1N6269AHE3_B/C the sole choice for production automotive systems requiring both high-energy clamping and long-term interconnect reliability.
Availability
1N6269AHE3_B/C is available at Aetrix Electronics and suitable for automotive ECU protection, industrial sensor interface hardening, and telecom DC feed surge suppression requiring stable component supply, full traceability, and lifecycle continuity.
Supply support for 1N6269AHE3_B/C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, power efficiency, and automotive-grade validation.
The 1N6269AHE3_B/C belongs to Vishay's TRANSZORB® TVS family, engineered specifically for high-energy transient suppression in harsh environments - targeting automotive, industrial, and infrastructure applications where failure is not an option.
FAQ
What is the breakdown voltage range of the 1N6269AHE3_B/C?
The 1N6269AHE3_B/C has a guaranteed breakdown voltage (VBR) range of 7.79 V to 8.61 V at a test current of 10 mA, measured per JEDEC standard. This tight tolerance ensures predictable clamping onset and compatibility with 5 V or 3.3 V logic-supplied protection circuits where margin above VWM (7.02 V) is critical. The value is confirmed in Vishay's official datasheet revision 09-Aug-2022, Document Number 88301.
Is the 1N6269AHE3_B/C suitable for automotive applications?
Yes, the 1N6269AHE3_B/C is AEC-Q101 qualified (as indicated by the HE3 suffix), making it suitable for automotive applications including engine control modules, body control units, and ADAS sensor interfaces. It meets JESD 201 Class 2 whisker resistance and operates reliably from –55 °C to +175 °C, satisfying under-hood thermal and long-term reliability requirements defined in the 1N6269AHE3_B/C datasheet.
What is the clamping voltage of the 1N6269AHE3_B/C at its rated peak pulse current?
The 1N6269AHE3_B/C clamps to a maximum of 12.1 V at its peak pulse current (IPPM) of 124 A, tested with a 10/1000 µs waveform. This VC value directly determines the maximum voltage imposed on protected circuitry during surge events and is validated in the "Electrical Characteristics" table of the 1N6269AHE3_B/C datasheet (Document Number 88301).
Does the 1N6269AHE3_B/C have bidirectional capability?
No, the 1N6269AHE3_B/C is a unidirectional TVS diode. Its part number lacks the "C" suffix (e.g., 1N6269CA), which denotes bidirectional variants. As a unidirectional device, it conducts only in reverse bias during overvoltage events and requires correct polarity installation - cathode connected to the line being protected, anode to ground - to function as intended per the 1N6269AHE3_B/C specification.
What package type does the 1N6269AHE3_B/C use, and what are its key mechanical features?
The 1N6269AHE3_B/C uses the DO-201AD package (Case Style 1.5KE), featuring axial leads with 0.375" (9.5 mm) length, matte tin-plated terminations compliant with J-STD-002, and UL 94 V-0 rated epoxy molding. Its glass-passivated junction and RoHS-compliant construction are fully detailed in the "Mechanical Data" section of the 1N6269AHE3_B/C datasheet (Revision 09-Aug-2022).
1N6269AHE3_B/C Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 7.02V
- Voltage - Breakdown (Min):
- 7.79V
- Voltage - Clamping (Max) @ Ipp:
- 12.1V
- Current - Peak Pulse (10/1000µs):
- 124A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1N6269AHE3_B/C FAQ
1.How can I place an order for 1N6269AHE3_B/C through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6269AHE3_B/C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6269AHE3_B/C reliable?
The price and inventory of 1N6269AHE3_B/C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6269AHE3_B/C is usually 5 days.
3.What payment methods are accepted for 1N6269AHE3_B/C?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6269AHE3_B/C transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6269AHE3_B/C?
1N6269AHE3_B/C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6269AHE3_B/C order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6269AHE3_B/C?
For technical support, including 1N6269AHE3_B/C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6269AHE3_B/C requirements.
6.How does Aetrix verify that 1N6269AHE3_B/C is sourced from the original manufacturer or authorized distributors?
All 1N6269AHE3_B/C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6269AHE3_B/C meets industry standards.
7.What is the process for return or replacement of 1N6269AHE3_B/C?
All 1N6269AHE3_B/C units undergo pre-shipment inspection (PSI). If there is an issue with 1N6269AHE3_B/C, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6269AHE3_B/C part is unused and in its original packaging.
Return procedure for 1N6269AHE3_B/C:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6269AHE3_B/C Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
