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Vishay General Semiconductor - Diodes Division 1N6270AHE3_B/C
- Part No.:
- 1N6270AHE3_B/C
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1N6270AHE3_B/C.pdf
- Description:
- 1.5KW,9.1V 5%,UNIDIR,AXIAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:9,160
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Product details
Overview
1N6270AHE3_B/C from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode designed for primary overvoltage protection in DC power rails and signal lines. It features a 9.1 V breakdown voltage (VBR = 8.65–9.55 V at IT = 1.0 mA), 7.78 V maximum working voltage (VWM), 13.4 V clamping voltage (VC) at 112 A peak pulse current, and 1500 W peak pulse power rating with 10/1000 µs waveform - used to safeguard MOSFETs, ICs, and sensor interfaces against lightning-induced transients and inductive switching surges.
For engineers reviewing the 1N6270AHE3_B/C datasheet, 1N6270AHE3_B/C pinout, 1N6270AHE3_B/C application, or 1N6270AHE3_B/C equivalent, this device is selected for robust, low-leakage transient suppression in automotive body electronics, industrial PLC I/O modules, and telecom line interface circuits where fast response (<1 ns), high surge capability, and AEC-Q101 qualification are required.
Technical Context
This unidirectional TVS diode operates as a voltage-clamped shunt protector: when reverse voltage exceeds VBR, it avalanches into low-impedance conduction to divert surge current away from downstream components. Its glass-passivated junction ensures stable breakdown characteristics and low leakage (<50 µA at VWM).
It delivers 1500 W peak pulse power handling per JEDEC-standard 10/1000 µs waveform, with thermal resistance RθJL = 15.4 °C/W enabling effective heat transfer to PCB leads. The device is RoHS-compliant, AEC-Q101 qualified (per note 2), and rated for operation from –55 °C to +175 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 8.65 V / 9.55 V at 1.0 mA test current - defines precise avalanche initiation threshold for reliable overvoltage detection |
| VWM | 7.78 V - maximum continuous reverse operating voltage before leakage rises above 50 µA |
| VC @ IPPM | 13.4 V at 112 A - clamping voltage during full 1500 W surge, limiting stress on protected ICs |
| IPPM | 112 A - peak pulse current capability with 10/1000 µs waveform, supporting high-energy transient events |
| PPPM | 1500 W - standardized surge power rating confirming suitability for IEC 61000-4-5 Level 4 compliance designs |
| Junction Temp Range | –55 °C to +175 °C - enables deployment in under-hood automotive and industrial environments |
| Leakage @ VWM | <50 µA - minimizes standby power loss and avoids false triggering in low-power sensor circuits |
Pinout & Package
Package: Case Style 1.5KE - molded epoxy DO-201AD package with matte tin-plated leads; 0.375" (9.5 mm) lead length; UL 94 V-0 rated; RoHS compliant and AEC-Q101 qualified (HE3 suffix).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to circuit ground or lower-potential node in unidirectional clamp configuration |
| Cathode (banded end) | Reverse-biased avalanche terminal | Connected to protected line (e.g., 12 V rail or RS-485 bus); color band identifies polarity for correct PCB orientation |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Ensures stable VBR tolerance and long-term reliability under thermal cycling and humidity stress |
| 1500 W peak pulse power (10/1000 µs) | Supports IEC 61000-4-5 4th-level surge immunity without external derating in standard layouts |
| AEC-Q101 qualified | Validated for automotive applications including body control modules and infotainment power supplies |
| Low clamping ratio (VC/VBR ≈ 1.41) | Minimizes overvoltage overshoot during fast transients, protecting 5 V and 3.3 V logic interfaces |
| Fast response time <1 ns | Clamps before sensitive semiconductor junctions experience destructive voltage stress |
Applications
| Automotive Body Control Module | Industrial PLC Digital Input |
|---|---|
Use Scenario: Protecting microcontroller GPIOs and CAN transceiver power rails from load dump and alternator ripple in vehicle door modules. IC Role / Device Role / Timing Role: Unidirectional shunt TVS placed between 12 V supply and ground, clamping transients before they reach LDO regulators and MCU pins. Use Value: Withstands 1500 W surges while maintaining VC = 13.4 V - well below 16 V absolute max rating of typical 12 V-input LDOs. |
Use Scenario: Safeguarding 24 V digital input channels in programmable logic controllers exposed to relay coil flyback and field wiring ESD. IC Role / Device Role / Timing Role: Primary overvoltage clamp on the input side of optocoupler isolation barriers, absorbing energy before signal conditioning circuitry. Use Value: 112 A IPPM and 7.78 V VWM enable clean detection of 24 V logic high while rejecting >1 kV surges per IEC 61000-4-4. |
| Telecom Line Interface | Consumer Appliance Motor Driver |
Use Scenario: Secondary protection on POTS or DSL line interface cards subjected to induced lightning surges per ITU-T K.20/21. IC Role / Device Role / Timing Role: Fast-acting shunt suppressor placed after gas discharge tube (GDT) primary protection, handling residual energy and follow-on current. Use Value: Sub-1 ns response ensures clamping occurs before GDT arc-quenching delay, preventing damage to line driver ICs. |
Use Scenario: Suppressing inductive kickback from brushed DC motor windings in washing machine control boards. IC Role / Device Role / Timing Role: Parallel-connected TVS across H-bridge FETs' drain-source terminals to clamp voltage spikes during PWM commutation. Use Value: 13.4 V clamping voltage limits MOSFET VDSS stress during 100+ V flyback events, extending FET lifetime. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ9.0A | Lower PPPM = 600 W; same VBR range (8.55–9.45 V); SMB package (smaller footprint, higher thermal resistance) | Suitable for space-constrained consumer electronics but not for automotive or industrial surge testing compliance | Select 1N6270AHE3_B/C when 1500 W surge margin, AEC-Q101 qualification, or DO-201AD mechanical robustness is required. |
| 1.5KE9.1A | Identical electrical specs and package; differs only in packaging suffix (E3 vs HE3_B/C) - no AEC-Q101 qualification | Acceptable for commercial-grade industrial equipment but excluded from automotive production due to missing qualification | Choose 1N6270AHE3_B/C over 1.5KE9.1A when AEC-Q101 compliance and traceable whisker-tested leads (JESD 201 Class 2) are mandatory. |
Compared with SMBJ9.0A, the 1N6270AHE3_B/C provides double the surge power headroom and automotive qualification; compared with 1.5KE9.1A, it adds AEC-Q101 validation and enhanced lead finish reliability - critical for OEM production continuity and long-term field performance.
Availability
1N6270AHE3_B/C is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC I/O protection, and telecom line interface designs requiring stable component supply, long-lifecycle support, and AEC-Q101-qualified surge suppression.
Supply support for 1N6270AHE3_B/C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, power efficiency, and automotive-grade qualification.
The 1N6270AHE3_B/C belongs to Vishay's TRANSZORB® TVS family - engineered specifically for high-energy transient suppression in harsh environments, with design focus on fast clamping, low leakage, and AEC-Q101-compliant robustness.
FAQ
What is the breakdown voltage tolerance of the 1N6270AHE3_B/C?
The 1N6270AHE3_B/C has a specified breakdown voltage range of 8.65 V to 9.55 V at 1.0 mA test current, yielding ±5.5% tolerance about the nominal 9.1 V rating. This tight VBR window ensures consistent clamping behavior across production lots and supports precise overvoltage threshold design in safety-critical circuits.
Is the 1N6270AHE3_B/C suitable for bidirectional transient protection?
No, the 1N6270AHE3_B/C is a unidirectional TVS diode - it conducts only in reverse bias above VBR and blocks forward current like a standard diode. For bidirectional protection, Vishay offers the 1N6270CA variant; the "A" suffix in 1N6270AHE3_B/C explicitly denotes unidirectional polarity.
Does the 1N6270AHE3_B/C meet AEC-Q101 requirements?
Yes, the 1N6270AHE3_B/C is AEC-Q101 qualified per note (2) in the Vishay document 88301, covering devices from 1.5KE6.8AHE3_B to 1.5KE220AHE3_B. This qualification confirms its suitability for automotive applications including engine control units, body electronics, and ADAS power domains.
What is the maximum clamping voltage of the 1N6270AHE3_B/C under surge conditions?
The 1N6270AHE3_B/C exhibits a maximum clamping voltage (VC) of 13.4 V when subjected to its rated peak pulse current of 112 A using the standard 10/1000 µs waveform. This value is measured per JEDEC test conditions and represents the worst-case voltage seen by downstream components during a full 1500 W transient event.
How does the 1N6270AHE3_B/C compare to the 1.5KE9.1A in terms of reliability and qualification?
The 1N6270AHE3_B/C shares identical electrical and mechanical specifications with the 1.5KE9.1A but adds AEC-Q101 qualification and JESD 201 Class 2 whisker testing (via HE3_B/C suffix). These enhancements make the 1N6270AHE3_B/C suitable for automotive production, whereas the 1.5KE9.1A is limited to commercial-grade use.
1N6270AHE3_B/C Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 7.78V
- Voltage - Breakdown (Min):
- 8.65V
- Voltage - Clamping (Max) @ Ipp:
- 13.4V
- Current - Peak Pulse (10/1000µs):
- 112A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1N6270AHE3_B/C FAQ
1.How can I place an order for 1N6270AHE3_B/C through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6270AHE3_B/C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6270AHE3_B/C reliable?
The price and inventory of 1N6270AHE3_B/C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6270AHE3_B/C is usually 5 days.
3.What payment methods are accepted for 1N6270AHE3_B/C?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6270AHE3_B/C transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6270AHE3_B/C?
1N6270AHE3_B/C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6270AHE3_B/C order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6270AHE3_B/C?
For technical support, including 1N6270AHE3_B/C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6270AHE3_B/C requirements.
6.How does Aetrix verify that 1N6270AHE3_B/C is sourced from the original manufacturer or authorized distributors?
All 1N6270AHE3_B/C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6270AHE3_B/C meets industry standards.
7.What is the process for return or replacement of 1N6270AHE3_B/C?
All 1N6270AHE3_B/C units undergo pre-shipment inspection (PSI). If there is an issue with 1N6270AHE3_B/C, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6270AHE3_B/C part is unused and in its original packaging.
Return procedure for 1N6270AHE3_B/C:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6270AHE3_B/C Tags
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