My Inquiry
My Account
Vishay General Semiconductor - Diodes Division 1N6271AHE3_B/C
- Part No.:
- 1N6271AHE3_B/C
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1N6271AHE3_B/C.pdf
- Description:
- 1.5KW,10V 5%,UNIDIR,AXIAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:3,587
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N6271AHE3_B/C from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode designed for primary overvoltage protection in DC power rails and signal lines. It features a 10 V standoff voltage (VWM), 9.5–10.5 V breakdown voltage (VBR) at 1 mA, 14.5 V clamping voltage (VC) at 103 A peak pulse current, 1500 W peak pulse power rating (10/1000 µs), and operates from –55 °C to +175 °C junction temperature - deployed in automotive ECUs and industrial sensor interfaces.
For engineers reviewing the 1N6271AHE3_B/C datasheet, 1N6271AHE3_B/C pinout, 1N6271AHE3_B/C application, or 1N6271AHE3_B/C equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance (RθJL = 15.4 °C/W), JEDEC 1.5KE package dimensions, and real-world protection use cases - all confirmed from Vishay's official 88301 document revision 09-Aug-2022.
Technical Context
This unidirectional TVS diode uses a glass-passivated silicon junction to achieve sub-nanosecond response time (<1 ns), low incremental surge resistance, and stable clamping under repetitive 10/1000 µs transients. Its 1500 W peak pulse power rating is derated linearly above 25 °C ambient per Figure 2, with maximum junction temperature limited to 175 °C.
The device complies with JESD 201 Class 2 whisker testing (HE3 suffix), RoHS, and UL 94 V-0 flammability standards. It is rated for 200 A non-repetitive forward surge current (8.3 ms half-sine), and exhibits VF = 3.5 V at 100 A - confirming suitability for high-energy transient suppression in 12 V and 24 V automotive systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 8.55 V - maximum continuous reverse voltage before leakage exceeds 10 µA; defines safe operating margin below breakdown |
| VBR (Breakdown Voltage) | 9.5–10.5 V at 1 mA - precise voltage threshold where avalanche conduction initiates reliably |
| VC (Clamping Voltage) | 14.5 V at 103 A IPPM - limits downstream component stress during worst-case 1500 W transient |
| PPPM | 1500 W (10/1000 µs waveform) - peak energy-handling capacity without failure; enables robust lightning/inductive-spike protection |
| TJ max. | +175 °C - supports under-hood automotive placement and high-ambient industrial environments |
| RθJL | 15.4 °C/W - low junction-to-lead thermal resistance enables effective heat dissipation into PCB copper or heatsinked leads |
| AEC-Q101 Qualified | Yes (HE3_B variant) - validated for automotive electronics per stress test requirements including HTGB, HTRB, and TCT |
Pinout & Package
Package: JEDEC 1.5KE molded epoxy case (Case Style 1.5KE), axial-leaded, RoHS-compliant matte tin-plated leads. Dimensions: 5.3 mm diameter × 9.5 mm length (0.210" × 0.375"), lead diameter 1.07 mm (0.042").
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / low-side connection | Connected to ground or lower-potential rail; conducts during reverse-transient clamping when cathode is at higher potential |
| Cathode | Reverse-biased terminal / protected line input | Marked with color band; connects to supply rail or signal line requiring protection; avalanche conduction occurs here during overvoltage |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Enables stable, repeatable avalanche characteristics over lifetime and temperature; eliminates surface degradation risks |
| 1500 W peak pulse power (10/1000 µs) | Withstands high-energy transients from load dump or inductive switching without parametric shift or failure |
| AEC-Q101 qualified (HE3_B) | Validated for automotive-grade reliability - includes 1000-cycle temperature cycling, unbiased HTRB, and accelerated moisture resistance |
| Low clamping ratio (VC/VBR ≈ 1.45) | Minimizes overvoltage overshoot during clamping - critical for protecting 12 V logic ICs and CAN transceivers |
| JESD 201 Class 2 whisker resistance | Prevents tin whisker growth under thermal cycling and humidity - ensures long-term solder joint integrity in harsh environments |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Clamping |
|---|---|
Use Scenario: Protecting 12 V battery-fed microcontroller power inputs against ISO 7637-2 Pulse 5a load dump transients up to 60 V/100 ms. IC Role / Device Role / Timing Role: Unidirectional TVS placed between VCC and GND; clamps within <1 ns to limit voltage to ≤14.5 V during 103 A surge. Use Value: Prevents MCU brownout or latch-up while maintaining system uptime - validated in AEC-Q101-compliant ECU designs. |
Use Scenario: Shielding 4–20 mA analog sensor outputs from ESD events (IEC 61000-4-2 ±8 kV contact) and field-wiring induced surges. IC Role / Device Role / Timing Role: TVS connected across signal and return lines; absorbs fast-rising transients before reaching ADC input stage. Use Value: Maintains measurement accuracy by limiting voltage excursion to <15 V - avoids front-end op-amp saturation or damage. |
| Telecom DC Power Input Stage | Consumer Appliance Motor Driver Protection |
Use Scenario: Safeguarding PoE-powered switch port DC-DC converter inputs from lightning-induced surges on Ethernet cabling. IC Role / Device Role / Timing Role: Primary clamping device on 48 V input rail; coordinates with secondary MOVs to distribute energy across stages. Use Value: Enables compliance with IEC 61000-4-5 Level 3 (1 kV/2 Ω) surge immunity without derating converter FETs. |
Use Scenario: Suppressing inductive kickback from brushed DC motors in washing machine control boards during commutation. IC Role / Device Role / Timing Role: Mounted across motor terminals; diverts flyback energy away from H-bridge MOSFETs during PWM turn-off. Use Value: Extends MOSFET lifetime by limiting VDS spikes to <15 V - reduces gate oxide stress and avalanche energy dissipation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ10A | Lower PPPM (600 W), smaller SMB package (3.5 mm × 4.5 mm), same VWM (8.55 V), slightly higher VC (17.0 V @ 35.1 A) | Best suited for space-constrained PCBs with moderate surge exposure (e.g., USB ports, low-power sensors) | Select SMBJ10A only if board area is critical and peak surge energy remains ≤600 W; not suitable for automotive load dump. |
| 1.5KE10AHE3_A | Same electrical specs and 1.5KE package, but HE3_A suffix indicates earlier revision (A vs. B); identical AEC-Q101 qualification and thermal performance | No functional difference - used interchangeably where legacy BOMs specify revision A | Choose 1.5KE10AHE3_A only for backward compatibility; 1N6271AHE3_B/C offers updated traceability and manufacturing controls. |
Compared with SMBJ10A, the 1N6271AHE3_B/C delivers 2.5× higher surge energy handling and superior thermal robustness for automotive-grade deployment; versus 1.5KE10AHE3_A, it provides enhanced process control and lifecycle documentation while maintaining full electrical and mechanical equivalence.
Availability
1N6271AHE3_B/C is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor interfaces, and telecom power input stages requiring stable component supply, AEC-Q101 validation, and 1500 W transient immunity.
Supply support for 1N6271AHE3_B/C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, power handling, and automotive qualification.
The 1N6271AHE3_B/C belongs to Vishay's TRANSZORB® TVS family, engineered specifically for high-energy transient suppression in harsh environments - targeting automotive, industrial, and infrastructure applications demanding AEC-Q101 compliance and 175 °C operation.
FAQ
What is the clamping voltage of the 1N6271AHE3_B/C at its rated peak pulse current?
The 1N6271AHE3_B/C clamps to a maximum of 14.5 V at its specified peak pulse current of 103 A (10/1000 µs waveform). This value is measured per Figure 7 in Vishay document 88301 and reflects the voltage seen by protected circuitry during worst-case transient events - critical for ensuring downstream ICs remain within absolute maximum ratings.
Is the 1N6271AHE3_B/C AEC-Q101 qualified?
Yes, the 1N6271AHE3_B/C is AEC-Q101 qualified, as confirmed in Note (2) on page 3 of Vishay document 88301, which explicitly lists "1.5KE6.8AHE3_B to 1.5KE220AHE3_B" under AEC-Q101 scope. The HE3_B/C suffix denotes RoHS compliance and automotive qualification - validated across HTGB, HTRB, and temperature cycling tests.
What does the "HE3_B/C" suffix mean in 1N6271AHE3_B/C?
The "HE3" indicates RoHS-compliant matte tin plating meeting JESD 201 Class 2 whisker resistance; "B" denotes the revision level of the AEC-Q101 qualification; "C" specifies the preferred package code (13" paper tape and reel, 1400 pcs/reel) per Vishay's ordering information table on page 3 of document 88301 - confirming full traceability and automotive-grade manufacturing control for the 1N6271AHE3_B/C.
Can the 1N6271AHE3_B/C be used in bidirectional configurations?
No, the 1N6271AHE3_B/C is a unidirectional TVS diode, as indicated by its part number structure (no "CA" suffix) and electrical specification table showing single-polarity parameters (VWM, VBR, VF). Bidirectional variants in this family use "CA" suffixes (e.g., 1.5KE10CA) and exhibit symmetric breakdown in both directions - the 1N6271AHE3_B/C lacks that capability.
What is the thermal resistance from junction to lead (RθJL) for the 1N6271AHE3_B/C?
The 1N6271AHE3_B/C has a typical junction-to-lead thermal resistance (RθJL) of 15.4 °C/W, as published in the Thermal Characteristics table on page 3 of Vishay document 88301. This low value enables efficient heat transfer from the silicon die to the PCB copper or external heatsink via the axial leads - essential for sustaining repeated surge events without thermal runaway.
1N6271AHE3_B/C Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8.55V
- Voltage - Breakdown (Min):
- 9.5V
- Voltage - Clamping (Max) @ Ipp:
- 14.5V
- Current - Peak Pulse (10/1000µs):
- 103A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1N6271AHE3_B/C FAQ
1.How can I place an order for 1N6271AHE3_B/C through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6271AHE3_B/C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6271AHE3_B/C reliable?
The price and inventory of 1N6271AHE3_B/C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6271AHE3_B/C is usually 5 days.
3.What payment methods are accepted for 1N6271AHE3_B/C?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6271AHE3_B/C transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6271AHE3_B/C?
1N6271AHE3_B/C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6271AHE3_B/C order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6271AHE3_B/C?
For technical support, including 1N6271AHE3_B/C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6271AHE3_B/C requirements.
6.How does Aetrix verify that 1N6271AHE3_B/C is sourced from the original manufacturer or authorized distributors?
All 1N6271AHE3_B/C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6271AHE3_B/C meets industry standards.
7.What is the process for return or replacement of 1N6271AHE3_B/C?
All 1N6271AHE3_B/C units undergo pre-shipment inspection (PSI). If there is an issue with 1N6271AHE3_B/C, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6271AHE3_B/C part is unused and in its original packaging.
Return procedure for 1N6271AHE3_B/C:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6271AHE3_B/C Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
