Vishay General Semiconductor - Diodes Division 1N6272AHE3_B/C
- Part No.:
- 1N6272AHE3_B/C
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1N6272AHE3_B/C.pdf
- Description:
- 1.5KW,11V 5%,UNIDIR,AXIAL TVS
- Quantity:
- Payment:

- Shipping:

Inventory:2,818
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Product details
Overview
1N6272AHE3_B/C from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode designed for primary overvoltage protection in DC power rails and signal lines. It features a 10.5–11.6 V breakdown voltage (VBR), 9.40 V stand-off voltage (VWM), 15.6 V clamping voltage at 96.2 A peak pulse current, 1500 W peak pulse power (10/1000 µs), and operates across –55 °C to +175 °C junction temperature. It is used to protect MOSFETs, ICs, and sensor interfaces against inductive switching transients and ESD in industrial power supplies.
For engineers reviewing the 1N6272AHE3_B/C datasheet, 1N6272AHE3_B/C pinout, 1N6272AHE3_B/C application, or 1N6272AHE3_B/C equivalent, this page delivers verified electrical parameters, JEDEC 1.5KE package details, AEC-Q101 qualification status, thermal resistance (RθJL = 15.4 °C/W), and real-world clamping behavior under standardized surge waveforms.
Technical Context
This unidirectional TVS diode uses a glass-passivated silicon junction optimized for fast response (<1 ns) and low incremental surge resistance. Its clamping action begins at 10.5 V (min VBR) and limits transient voltage to ≤15.6 V at 96.2 A (10/1000 µs), enabling robust protection of 12 V nominal systems without compromising normal operation.
It supports repetitive surge events at ≤0.01% duty cycle and is rated for 200 A non-repetitive forward surge (8.3 ms half-sine). The device meets JESD 201 Class 2 whisker resistance (HE3 suffix) and UL 94 V-0 flammability requirements via its molded epoxy case.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 10.5 V / 11.6 V - Ensures reliable conduction onset above 12 V rail noise while avoiding false triggering. |
| VWM | 9.40 V - Maximum continuous reverse voltage before leakage exceeds 5.0 µA; compatible with 9 V–12 V system margins. |
| VC @ IPPM | 15.6 V - Clamped voltage during 96.2 A transient; protects downstream 16 V-rated components. |
| PPPM | 1500 W - Peak power handling per 10/1000 µs waveform; sufficient for IEC 61000-4-5 Level 4 surges. |
| IPPM | 96.2 A - Peak pulse current capability; enables single-device protection for moderate-energy transients. |
| TJ max. | +175 °C - High-temperature operation supports under-hood automotive and industrial motor drive environments. |
| RθJL | 15.4 °C/W - Low junction-to-lead thermal resistance allows effective heat dissipation through PCB copper pours or heatsinked leads. |
Pinout & Package
Package: JEDEC-standard Case Style 1.5KE - axial-leaded, molded epoxy body (UL 94 V-0), 0.375" (9.5 mm) lead length, matte tin-plated leads compliant with J-STD-002 and JESD 22-B102.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to system ground or lower-potential node; conducts during positive transients when cathode is at higher potential. |
| Cathode | Reverse-biased terminal (marked with band) | Connected to protected line (e.g., 12 V rail); initiates clamping when voltage exceeds VBR in reverse direction. |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Enables stable VBR tolerance (±5%) and long-term reliability under thermal cycling and humidity stress. |
| AEC-Q101 qualified (HE3_B variant) | Validated for automotive-grade use including engine control units and body electronics requiring zero defect rates. |
| 1500 W peak pulse power (10/1000 µs) | Provides single-device protection against high-energy transients without external series impedance or derating. |
| 0.01% maximum duty cycle rating | Supports repetitive surge events in industrial motor drives and relay-controlled systems with defined burst intervals. |
| JESD 201 Class 2 whisker resistance | Prevents tin whisker growth under thermal/humidity stress, critical for long-life embedded and automotive applications. |
Applications
| Automotive Power Rail Protection | Industrial PLC Input Protection |
|---|---|
Use Scenario: Protecting 12 V battery-fed ECUs from load dump and alternator ripple transients. IC Role / Device Role / Timing Role: Unidirectional clamping device placed between power rail and ground, responding within <1 ns to suppress >100 V spikes. Use Value: Limits rail voltage to ≤15.6 V during 96.2 A surges, preventing latch-up or gate oxide damage in MCU and CAN transceivers. |
Use Scenario: Shielding digital input channels of programmable logic controllers from field-wiring induced surges. IC Role / Device Role / Timing Role: Primary overvoltage clamp on 24 V DC input terminals, operating in parallel with optocoupler input stages. Use Value: Absorbs up to 1500 W transient energy without degradation, maintaining signal integrity during factory floor EMI events. |
| DC Motor Drive Board Protection | Sensor Signal Line Protection |
Use Scenario: Safeguarding H-bridge gate drivers and current sense amplifiers from inductive kickback during PWM commutation. IC Role / Device Role / Timing Role: Fast-acting shunt suppressor across motor supply terminals, triggered by dV/dt exceeding 10.5 V. Use Value: Clamps flyback spikes to safe levels before they propagate into logic-level circuitry, eliminating need for RC snubbers. |
Use Scenario: Guarding analog outputs of temperature/pressure sensors connected to long cables in HVAC systems. IC Role / Device Role / Timing Role: Low-capacitance (<100 pF typical) unidirectional TVS on 0–5 V or 4–20 mA output lines. Use Value: Prevents sensor IC damage from cable-coupled lightning-induced surges while preserving signal bandwidth and accuracy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1.5KE11AHE3_B/C | Identical electrical specs and package; same VBR, VWM, VC, and PPPM; direct cross-reference per Vishay documentation. | No functional difference; both rated for 12 V system protection with identical thermal and surge performance. | Select 1.5KE11AHE3_B/C if sourcing from alternate part numbering conventions; electrically and mechanically interchangeable. |
| SMBJ11A-E3/52 | Surface-mount SMB package (vs. axial 1.5KE), lower PPPM (600 W), higher VC (18.2 V @ 32.9 A), RθJA = 110 °C/W. | Suitable only for lower-energy transients; requires PCB layout change and thermal relief design due to SMT footprint and reduced power rating. | Choose SMBJ11A-E3/52 only for space-constrained designs where 600 W protection suffices and reflow compatibility is required. |
Compared with 1N6272AHE3_B/C, 1.5KE11AHE3_B/C offers identical protection performance in the same axial package, while SMBJ11A-E3/52 trades peak power and thermal robustness for board-space savings-making it unsuitable for high-energy industrial or automotive surge scenarios.
Availability
1N6272AHE3_B/C is available at Aetrix Electronics and suitable for automotive power rail protection, industrial PLC input conditioning, DC motor drive board safeguarding, and sensor signal line hardening requiring stable component supply across extended production lifecycles.
Supply support for 1N6272AHE3_B/C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, power efficiency, and AEC-Q qualification.
The 1N6272AHE3_B/C belongs to Vishay's TRANSZORB® TVS family, engineered specifically for high-energy transient suppression in harsh environments-including automotive, industrial automation, and telecom infrastructure-where failure resilience is non-negotiable.
FAQ
What is the breakdown voltage range of the 1N6272AHE3_B/C?
The 1N6272AHE3_B/C has a guaranteed breakdown voltage (VBR) range of 10.5 V to 11.6 V at 1.0 mA test current. This tight tolerance ensures consistent clamping onset across production lots and supports precise coordination with downstream overvoltage thresholds in 12 V systems. The value is measured per JEDEC standard and confirmed in Vishay's 88301 datasheet revision 09-Aug-2022.
Is the 1N6272AHE3_B/C AEC-Q101 qualified?
Yes, the 1N6272AHE3_B/C is AEC-Q101 qualified as indicated by the "HE3_B" suffix and confirmed in Note (2) on page 3 of the Vishay document 88301. This qualification covers stress testing for temperature cycling, humidity bias, and mechanical shock-validating suitability for automotive powertrain and body electronics applications where reliability is mission-critical.
What is the clamping voltage of the 1N6272AHE3_B/C at its rated peak pulse current?
The 1N6272AHE3_B/C clamps to a maximum of 15.6 V at its rated peak pulse current (IPPM) of 96.2 A under the standard 10/1000 µs waveform. This value is specified in the Electrical Characteristics table on page 2 of the Vishay 88301 datasheet and defines the upper voltage limit imposed on protected circuits during worst-case surge events.
Can the 1N6272AHE3_B/C be used in bidirectional configurations?
No, the 1N6272AHE3_B/C is a unidirectional TVS diode, as confirmed by its part number structure (no "C" suffix) and the polarity note on page 1 stating "for unidirectional types the color band denotes cathode end." Bidirectional variants in this family carry the "CA" suffix (e.g., 1.5KE11CA), which the 1N6272AHE3_B/C does not include.
What is the thermal resistance from junction to lead (RθJL) for the 1N6272AHE3_B/C?
The 1N6272AHE3_B/C has a typical junction-to-lead thermal resistance (RθJL) of 15.4 °C/W, as published in the Thermal Characteristics table on page 3 of the Vishay 88301 datasheet. This low value enables efficient heat transfer from the silicon die to the PCB copper or external heatsink via the axial leads, supporting sustained operation under repetitive surge conditions.
1N6272AHE3_B/C Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 9.4V
- Voltage - Breakdown (Min):
- 10.5V
- Voltage - Clamping (Max) @ Ipp:
- 15.6V
- Current - Peak Pulse (10/1000µs):
- 96.2A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1N6272AHE3_B/C FAQ
1.How can I place an order for 1N6272AHE3_B/C through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6272AHE3_B/C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6272AHE3_B/C reliable?
The price and inventory of 1N6272AHE3_B/C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6272AHE3_B/C is usually 5 days.
3.What payment methods are accepted for 1N6272AHE3_B/C?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6272AHE3_B/C transactions.
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1N6272AHE3_B/C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6272AHE3_B/C order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6272AHE3_B/C?
For technical support, including 1N6272AHE3_B/C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6272AHE3_B/C requirements.
6.How does Aetrix verify that 1N6272AHE3_B/C is sourced from the original manufacturer or authorized distributors?
All 1N6272AHE3_B/C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6272AHE3_B/C meets industry standards.
7.What is the process for return or replacement of 1N6272AHE3_B/C?
All 1N6272AHE3_B/C units undergo pre-shipment inspection (PSI). If there is an issue with 1N6272AHE3_B/C, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6272AHE3_B/C part is unused and in its original packaging.
Return procedure for 1N6272AHE3_B/C:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6272AHE3_B/C Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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