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Vishay General Semiconductor - Diodes Division 1N6274AHE3_A/C
- Part No.:
- 1N6274AHE3_A/C
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1N6274AHE3_A/C.pdf
- Description:
- TVS DIODE 11.1VWM 18.2VC 1.5KE
- Quantity:
- Payment:
- Shipping:
Inventory:898
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Product details
Overview
1N6274AHE3_A/C from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode designed for primary-level overvoltage protection in DC power rails and signal lines. It features a 12.4 V to 13.7 V breakdown voltage (VBR) at 1.0 mA test current, 11.1 V maximum standoff voltage (VWM), 18.2 V clamping voltage (VC) at 82.4 A peak pulse current, and 1500 W peak pulse power rating with 10/1000 µs waveform - used to safeguard MOSFETs, ICs, and sensor interfaces in industrial power supplies.
For engineers reviewing the 1N6274AHE3_A/C datasheet, 1N6274AHE3_A/C pinout, 1N6274AHE3_A/C application, or 1N6274AHE3_A/C equivalent, this device is evaluated for robust transient suppression in automotive body electronics, industrial PLC I/O modules, and telecom power entry stages where fast response (<1 ns), low clamping ratio, and AEC-Q101 qualification (via HE3 suffix) are critical selection criteria.
Technical Context
This unidirectional TVS diode operates as a voltage-clamped shunt protector: it remains high-impedance below VWM (11.1 V), undergoes sharp avalanche breakdown between 12.4 V and 13.7 V, and limits transient voltage to ≤18.2 V at 82.4 A. Its glass-passivated junction ensures stable VBR tolerance (±5%) and low temperature coefficient (0.081 %/°C).
Designed for 10/1000 µs surge waveforms, it delivers 1500 W peak pulse power with <0.01% duty cycle, supports 200 A non-repetitive forward surge (8.3 ms half-sine), and maintains operation from –55 °C to +175 °C junction temperature - enabling use in thermally demanding environments without derating penalties up to 75 °C lead temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 12.4 V / 13.7 V at 1.0 mA - defines precise avalanche initiation window for reliable triggering before downstream component damage |
| VWM | 11.1 V - maximum continuous reverse operating voltage; ensures no leakage conduction during normal 12 V rail operation |
| VC @ IPPM | 18.2 V at 82.4 A - clamping voltage under full 1500 W surge; limits stress on protected 15 V-rated ICs to safe margin |
| PPPM | 1500 W (10/1000 µs) - enables single-device protection against IEC 61000-4-5 Level 4 surges (4 kV line-earth) |
| IFSM | 200 A (8.3 ms half-sine) - withstands high-energy inductive switch-off transients in relay or solenoid drive circuits |
| Junction Temp | –55 °C to +175 °C - supports under-hood automotive and industrial motor control applications without thermal shutdown |
| Leakage @ VWM | 5.0 µA max - negligible standby current draw; avoids battery drain in always-on systems |
Pinout & Package
Package: DO-201AD (Case Style 1.5KE), axial-leaded, molded epoxy body with matte tin-plated leads. RoHS-compliant, AEC-Q101 qualified (HE3 suffix), UL 94 V-0 rated.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry during forward conduction or surge shunting | Connected to protected circuit ground or low-side return path; enables unidirectional clamping to ground |
| Cathode | Current exit during reverse-biased avalanche clamping | Connected to protected line (e.g., 12 V rail); color band denotes cathode end per JEDEC standard |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Ensures stable VBR over lifetime and temperature; eliminates surface degradation under humidity or bias stress |
| 1500 W peak pulse power | Single-device protection against severe lightning-induced surges (IEC 61000-4-5) without parallel stacking |
| 0.081 %/°C tempco | Minimal VBR drift across –40 °C to +125 °C ambient; maintains consistent clamping threshold in wide-temp designs |
| AEC-Q101 qualified (HE3) | Validated for automotive powertrain and chassis applications; includes HTOL, TC, and HTRB stress testing |
| 1 ns response time | Faster than MOVs or GDTs; clamps transients before sensitive CMOS inputs reach destructive voltage levels |
Applications
| Automotive Body Control Module (BCM) | Industrial PLC Digital Input Module |
|---|---|
Use Scenario: Protects microcontroller GPIOs and CAN transceiver power pins from load-dump and jump-start transients in 12 V vehicle electrical systems. IC Role / Device Role / Timing Role: Unidirectional shunt clamp connected between 12 V rail and ground; activates within 1 ns to limit voltage to ≤18.2 V during 100 ms load-dump events. Use Value: Prevents latch-up or gate oxide rupture in 15 V-tolerant MCU I/Os while maintaining AEC-Q100 compliance via HE3 qualification. |
Use Scenario: Shields 24 V digital input optocoupler front-end from field-wiring induced surges in factory automation cabinets. IC Role / Device Role / Timing Role: Primary overvoltage suppressor placed upstream of series current-limiting resistor; clamps 1 kV/µs transients before they reach isolation barrier. Use Value: Enables >100,000 surge cycles without parameter shift due to glass-passivated junction stability and 175 °C max TJ. |
| Telecom Power Entry Stage | Consumer Appliance Motor Drive Board |
Use Scenario: Guards AC-DC adapter output rails against lightning-induced surges entering via PoE or external power cables in network equipment. IC Role / Device Role / Timing Role: Secondary-stage TVS after fuse and common-mode choke; handles differential-mode surges exceeding 1.5 kV per IEC 61000-4-5. Use Value: Delivers 1500 W clamping with 18.2 V VC, reducing required headroom for downstream LDOs and improving system-level surge pass rate. |
Use Scenario: Protects H-bridge gate drivers and bootstrap capacitors from inductive kickback when BLDC motors decelerate rapidly. IC Role / Device Role / Timing Role: Rail-to-ground clamp on 15 V gate drive supply; absorbs 200 A IFSM spikes from motor back-EMF reversal. Use Value: Eliminates need for snubber RC networks by providing sub-20 V clamping with zero recovery time and no follow-on current. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ13A | DO-214AA package (SMB), 13 V VBR, 200 W PPPM, 100 A IPPM | Lower power rating; suited for PCB space-constrained, lower-energy applications (e.g., USB ports) | Select SMBJ13A only when surge energy is ≤200 W and board layout cannot accommodate axial DO-201AD footprint. |
| 1.5KE13AHE3 | Same electrical specs and DO-201AD package; identical VBR, VC, PPPM, and AEC-Q101 qualification | No functional difference; alternate manufacturer-marked part number for same die and assembly | 1.5KE13AHE3 is a direct form-fit-function replacement; interchangeability confirmed by Vishay cross-reference documentation. |
Compared with 1N6274AHE3_A/C, SMBJ13A offers smaller size but sacrifices 87% peak power handling, while 1.5KE13AHE3 provides identical protection performance in the same package - making it a validated drop-in alternative for BOM consolidation.
Availability
1N6274AHE3_A/C is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC I/O protection, and telecom power entry stages requiring stable component supply, long-term lifecycle support, and AEC-Q101 qualified surge immunity.
Supply support for 1N6274AHE3_A/C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, power handling, and automotive-grade qualification.
The 1N6274AHE3_A/C belongs to Vishay's TRANSZORB® TVS family, engineered specifically for high-energy transient suppression in harsh-environment applications where failure is not an option - including automotive, industrial, and infrastructure systems.
FAQ
What is the breakdown voltage range of the 1N6274AHE3_A/C?
The 1N6274AHE3_A/C has a guaranteed breakdown voltage (VBR) range of 12.4 V to 13.7 V at 1.0 mA test current, measured per JEDEC standard. This tight ±5% tolerance ensures predictable clamping onset across production lots and temperature extremes, directly supporting design margin calculations for 12 V system protection.
Is the 1N6274AHE3_A/C suitable for automotive applications?
Yes, the 1N6274AHE3_A/C carries the HE3 suffix, confirming AEC-Q101 qualification per Vishay's documentation. It has undergone stress testing including high-temperature operating life (HTOL), temperature cycling (TC), and highly accelerated stress testing (HAST), making it approved for use in automotive body control modules, infotainment power supplies, and ADAS sensor interfaces.
What is the clamping voltage of the 1N6274AHE3_A/C at its rated peak pulse current?
The 1N6274AHE3_A/C clamps to a maximum of 18.2 V at its rated peak pulse current of 82.4 A (10/1000 µs waveform). This VC value is critical for ensuring protected components - such as 15 V-rated gate drivers or 16 V-input PMICs - remain within absolute maximum ratings during surge events.
Does the 1N6274AHE3_A/C have polarity marking, and how is it identified?
Yes, the 1N6274AHE3_A/C is unidirectional and features a cathode band (color stripe) on the body to identify the cathode terminal. Per JEDEC standards, the banded end connects to the protected line (e.g., 12 V rail), while the unbanded end connects to ground - ensuring correct orientation for effective shunt clamping.
How does the thermal resistance of the 1N6274AHE3_A/C affect its power derating?
The 1N6274AHE3_A/C has a typical junction-to-lead thermal resistance (RθJL) of 15.4 °C/W. When mounted with 0.375" (9.5 mm) lead length, its power dissipation must be derated linearly above 75 °C lead temperature per Fig. 5 in the datasheet - enabling 6.5 W continuous operation at TL = 75 °C but requiring reduction to ~4.5 W at TL = 100 °C.
1N6274AHE3_A/C Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 11.1V
- Voltage - Breakdown (Min):
- 12.4V
- Voltage - Clamping (Max) @ Ipp:
- 18.2V
- Current - Peak Pulse (10/1000µs):
- 82.4A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1N6274AHE3_A/C FAQ
1.How can I place an order for 1N6274AHE3_A/C through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6274AHE3_A/C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6274AHE3_A/C reliable?
The price and inventory of 1N6274AHE3_A/C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6274AHE3_A/C is usually 5 days.
3.What payment methods are accepted for 1N6274AHE3_A/C?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6274AHE3_A/C transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6274AHE3_A/C?
1N6274AHE3_A/C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6274AHE3_A/C order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6274AHE3_A/C?
For technical support, including 1N6274AHE3_A/C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6274AHE3_A/C requirements.
6.How does Aetrix verify that 1N6274AHE3_A/C is sourced from the original manufacturer or authorized distributors?
All 1N6274AHE3_A/C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6274AHE3_A/C meets industry standards.
7.What is the process for return or replacement of 1N6274AHE3_A/C?
All 1N6274AHE3_A/C units undergo pre-shipment inspection (PSI). If there is an issue with 1N6274AHE3_A/C, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6274AHE3_A/C part is unused and in its original packaging.
Return procedure for 1N6274AHE3_A/C:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6274AHE3_A/C Tags
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ESD9B5.0ST5G
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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