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Vishay General Semiconductor - Diodes Division 1N6275AHE3_B/C
- Part No.:
- 1N6275AHE3_B/C
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1N6275AHE3_B/C.pdf
- Description:
- 1.5KW,15V 5%,UNIDIR,AXIAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:2,546
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Product details
Overview
1N6275AHE3_B/C from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode designed for primary overvoltage protection in DC power rails and signal lines. It features a 1500 W peak pulse power rating (10/1000 µs), 14.3–15.8 V breakdown voltage at 1.0 mA test current, 12.8 V maximum standoff voltage, 21.2 V clamping voltage at 70.8 A peak pulse current, and operates across –55 °C to +175 °C junction temperature. It is used in automotive power supply inputs and industrial sensor interface protection.
For engineers reviewing the 1N6275AHE3_B/C datasheet, 1N6275AHE3_B/C pinout, 1N6275AHE3_B/C application, or 1N6275AHE3_B/C equivalent, this page delivers verified electrical parameters, thermal behavior, AEC-Q101 qualification status, RoHS-compliant packaging, and real-world design context for surge immunity validation in safety-critical embedded systems.
Technical Context
This TVS diode uses a glass-passivated silicon junction optimized for fast clamping response (<1 ns) and low incremental surge resistance. Its unidirectional polarity enables cathode-referenced placement on positive-rail protection paths, with a 10/1000 µs waveform-rated 1500 W pulse capability and 70.8 A peak pulse current handling at 21.2 V clamping.
The device is rated for 6.5 W steady-state power dissipation on an infinite heatsink at 75 °C lead temperature, exhibits 75 °C/W junction-to-ambient thermal resistance, and supports 200 A non-repetitive forward surge current (8.3 ms half-sine). Its 0.084 %/°C temperature coefficient of VBR ensures stable breakdown across wide operating temperatures.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 14.3 V / 15.8 V at 1.0 mA - defines minimum guaranteed clamping onset and maximum variation under production tolerance |
| VWM | 12.8 V - maximum continuous reverse working voltage before leakage exceeds 1.0 µA |
| VC @ IPPM | 21.2 V at 70.8 A - clamped voltage during full 1500 W transient, directly limiting downstream IC stress |
| PPPM | 1500 W (10/1000 µs) - peak surge energy absorption capacity for lightning or ESD-like transients |
| TJ range | –55 °C to +175 °C - enables deployment in under-hood automotive and industrial environments without derating |
| Package | Case Style 1.5KE - axial-leaded DO-201AD package with 0.375" lead length, UL 94 V-0 compliant epoxy body |
| AEC-Q101 | Qualified - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing |
Pinout & Package
1N6275AHE3_B/C is housed in a DO-201AD (Case Style 1.5KE) axial-leaded package. The cathode is marked by a color band on the body; the anode is unmarked. Leads are matte tin-plated and solderable per J-STD-002 and JESD 22-B102.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point in forward bias; connected to ground or low-side reference | Provides low-impedance path for surge current to return during clamping; must be routed with minimal inductance |
| Cathode | Current exit point in forward bias; connected to protected line | Acts as the "protected node" side-voltage at this terminal is clamped to ≤21.2 V during 70.8 A transients |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Enables stable, repeatable breakdown characteristics and long-term reliability under repeated surge stress |
| 1500 W peak pulse power (10/1000 µs) | Supports IEC 61000-4-5 Level 4 (4 kV) surge immunity when properly mounted with low-inductance layout |
| AEC-Q101 qualification | Validates suitability for automotive powertrain and body electronics where failure modes impact functional safety |
| RoHS-compliant HE3 suffix | Indicates AEC-Q101 qualification plus JESD 201 Class 2 whisker resistance-critical for high-reliability solder joints |
| Low clamping ratio (VC/VBR ≈ 1.4) | Minimizes overvoltage overshoot during fast transients, reducing risk of latch-up or gate oxide damage in downstream MOSFETs |
Applications
| Automotive Power Input Protection | Industrial Sensor Signal Line Protection |
|---|---|
Use Scenario: Protecting 12 V battery-fed ECUs against load dump (ISO 16750-2) and alternator switching transients. IC Role / Device Role / Timing Role: Primary shunt clamp placed between power rail and chassis ground, responding within <1 ns to limit voltage excursion. Use Value: Clamps peak voltage to ≤21.2 V at 70.8 A, preventing damage to 3.3 V/5 V regulators and microcontrollers downstream. | Use Scenario: Safeguarding analog outputs of pressure/temperature sensors in factory automation PLC modules exposed to motor switching noise. IC Role / Device Role / Timing Role: Unidirectional TVS placed on each sensor output line referenced to system ground, absorbing coupled inductive spikes. Use Value: Limits transient-induced offset errors and prevents ADC saturation by holding line voltage below 21.2 V during 10/1000 µs surges up to 1500 W. |
| Telecom DC Power Feeds | Consumer Appliance Motor Drive Inputs |
Use Scenario: Securing -48 V telecom rectifier outputs against lightning-induced surges on outside plant wiring. IC Role / Device Role / Timing Role: Cathode-connected to -48 V rail, anode to ground-clamps negative-going transients while blocking normal reverse bias. Use Value: Withstands repetitive 10/1000 µs pulses at 0.01% duty cycle and maintains 12.8 V standoff, ensuring uninterrupted operation. | Use Scenario: Shielding BLDC motor driver ICs in smart washing machines from back-EMF spikes generated during commutation. IC Role / Device Role / Timing Role: Mounted across H-bridge high-side FET source and rail, clamping inductive kickback before it reaches gate drivers. Use Value: Fast 1 ns response and 21.2 V clamping prevent gate oxide rupture in 600 V MOSFETs during 200 A surge events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ15A | DO-214AA package (SMB), lower 600 W PPPM, same 15 V nominal VBR range but higher VC (24.4 V @ 24.4 A) | Surface-mount only; unsuitable for through-hole legacy designs or high-current axial layouts | Select when board space is constrained and surge requirements are ≤600 W; verify layout inductance does not degrade clamping performance. |
| 1.5KE15A-E3/54 | Same 1.5KE package and electrical specs, but commercial-grade (non-AEC-Q101) and E3-only (no HE3 whisker rating) | Lacks automotive qualification and Class 2 whisker resistance-limited to industrial/commercial end equipment | Choose for cost-sensitive non-automotive applications where AEC-Q101 and JESD 201 Class 2 are not mandated. |
Compared with SMBJ15A and 1.5KE15A-E3/54, the 1N6275AHE3_B/C uniquely combines AEC-Q101 qualification, JESD 201 Class 2 whisker resistance, and full 1500 W surge capability in an axial package-making it the only option qualified for automotive under-hood use with proven long-term solder joint integrity.
Availability
1N6275AHE3_B/C is available at Aetrix Electronics and suitable for automotive power input protection, industrial sensor interface hardening, telecom DC feed safeguarding, and consumer appliance motor drive surge suppression requiring stable component supply across multi-year production cycles.
Supply support for 1N6275AHE3_B/C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability and application-specific performance.
The 1N6275AHE3_B/C belongs to Vishay's TRANSZORB® TVS family, engineered specifically for robust, high-energy transient suppression in harsh environments-including automotive, industrial, and telecom infrastructure-where failure is not an option.
FAQ
What is the breakdown voltage tolerance for 1N6275AHE3_B/C?
The 1N6275AHE3_B/C has a specified breakdown voltage range of 14.3 V to 15.8 V at 1.0 mA test current, representing a ±5% tolerance around the nominal 15 V rating. This tight VBR window ensures predictable clamping onset across production lots and supports reliable coordination with downstream overvoltage protection circuits in designs using the 1N6275AHE3_B/C.
Is 1N6275AHE3_B/C suitable for automotive applications?
Yes, the 1N6275AHE3_B/C is AEC-Q101 qualified and explicitly listed in Vishay's documentation as qualified for automotive use (Notes section, page 3). Its HE3 suffix confirms compliance with JESD 201 Class 2 whisker resistance, and its –55 °C to +175 °C operating range supports under-hood deployment-making the 1N6275AHE3_B/C appropriate for engine control units, body controllers, and ADAS power supplies.
What is the clamping voltage of 1N6275AHE3_B/C at its rated peak pulse current?
The 1N6275AHE3_B/C clamps to a maximum of 21.2 V at its rated peak pulse current of 70.8 A (10/1000 µs waveform). This value is measured per standard test conditions and reflects the actual voltage seen by protected circuitry during worst-case surge events-enabling accurate margin analysis for downstream components when designing with the 1N6275AHE3_B/C.
How does the thermal resistance of 1N6275AHE3_B/C affect PCB layout?
The 1N6275AHE3_B/C has a typical junction-to-ambient thermal resistance (RθJA) of 75 °C/W. To maintain safe junction temperatures during sustained surge events or elevated ambient conditions, PCB copper pour connected to both leads-especially the cathode-is essential. Layouts should minimize trace length and maximize thermal pad area, as poor heat sinking can cause premature thermal runaway during repetitive transients involving the 1N6275AHE3_B/C.
What does the "HE3_B/C" suffix mean in 1N6275AHE3_B/C?
The "HE3" suffix denotes RoHS compliance plus AEC-Q101 qualification and JESD 201 Class 2 whisker resistance; "B/C" indicates packaging in 13" paper tape and reel with a base quantity of 1400 units. This distinguishes the 1N6275AHE3_B/C from commercial-grade variants like 1.5KE15A-E3/54 and confirms its suitability for high-reliability automotive and industrial applications requiring certified long-term solder joint integrity.
1N6275AHE3_B/C Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 12.8V
- Voltage - Breakdown (Min):
- 14.3V
- Voltage - Clamping (Max) @ Ipp:
- 21.2V
- Current - Peak Pulse (10/1000µs):
- 70.8A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1N6275AHE3_B/C FAQ
1.How can I place an order for 1N6275AHE3_B/C through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6275AHE3_B/C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6275AHE3_B/C reliable?
The price and inventory of 1N6275AHE3_B/C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6275AHE3_B/C is usually 5 days.
3.What payment methods are accepted for 1N6275AHE3_B/C?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6275AHE3_B/C transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6275AHE3_B/C?
1N6275AHE3_B/C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6275AHE3_B/C order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6275AHE3_B/C?
For technical support, including 1N6275AHE3_B/C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6275AHE3_B/C requirements.
6.How does Aetrix verify that 1N6275AHE3_B/C is sourced from the original manufacturer or authorized distributors?
All 1N6275AHE3_B/C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6275AHE3_B/C meets industry standards.
7.What is the process for return or replacement of 1N6275AHE3_B/C?
All 1N6275AHE3_B/C units undergo pre-shipment inspection (PSI). If there is an issue with 1N6275AHE3_B/C, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6275AHE3_B/C part is unused and in its original packaging.
Return procedure for 1N6275AHE3_B/C:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6275AHE3_B/C Tags
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ESD9B5.0ST5G
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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