My Inquiry
My Account
Vishay General Semiconductor - Diodes Division 1N6276AHE3/51
- Part No.:
- 1N6276AHE3/51
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1N6276AHE3/51.pdf
- Description:
- TVS DIODE 13.6VWM 22.5VC 1.5KE
- Quantity:
- Payment:
- Shipping:
Inventory:7,819
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N6276AHE3/51 from Vishay General Semiconductor is a uni-directional Transient Voltage Suppressor (TVS) diode designed for primary overvoltage protection in DC power rails and signal lines. It features a 15.2–16.8 V breakdown voltage (VBR), 13.6 V maximum stand-off voltage (VWM), 22.5 V clamping voltage at 66.7 A peak pulse current, 1500 W peak pulse power (10/1000 µs), and AEC-Q101 qualification - deployed in automotive power supply inputs and industrial sensor interfaces.
For engineers reviewing the 1N6276AHE3/51 datasheet, 1N6276AHE3/51 pinout, 1N6276AHE3/51 application, or 1N6276AHE3/51 equivalent, this part serves as a RoHS-compliant, lead-free, high-reliability TVS for surge immunity in 12 V and 24 V systems where fast clamping (<1 ns), low incremental surge resistance, and stable thermal performance up to 175 °C junction temperature are required.
Technical Context
This device operates as a uni-directional avalanche diode with glass-passivated junction, optimized for transient suppression on positive-rail applications. Its clamping behavior follows a well-defined incremental voltage curve (ΔVC = VC − VBR) under 10/1000 µs surges, with thermal resistance of 15.4 °C/W (junction-to-lead) enabling robust pulsed power handling without heatsinking.
The 1N6276AHE3/51 exhibits 1.0 mA test current (IT), 1.0 µA max reverse leakage at VWM, and 0.086 %/°C temperature coefficient of VBR. Its matte tin-plated leads meet J-STD-002 solderability and JESD 201 Class 2 whisker resistance requirements, supporting automated assembly in automotive-grade production.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 15.2 V / 16.8 V - defines reliable avalanche initiation threshold under 1.0 mA test current; ensures consistent turn-on across temperature and unit variance |
| VWM | 13.6 V - maximum continuous working voltage before leakage exceeds 1.0 µA; sets safe DC operating margin below breakdown |
| VC @ IPPM | 22.5 V at 66.7 A - clamped voltage during 10/1000 µs surge; determines protected circuit's worst-case overvoltage exposure |
| PPPM | 1500 W - peak pulse power rating per 10/1000 µs waveform; enables single-event lightning or ESD-level surge absorption |
| TJ max. | +175 °C - maximum junction temperature; supports operation in under-hood automotive environments and sealed industrial enclosures |
| AEC-Q101 | Qualified - validated for automotive electronic modules per stress test requirements including HTOL, TCT, and HTRB |
| Package | Case Style 1.5KE - axial-leaded DO-201AD package with 0.375" (9.5 mm) lead length; UL 94 V-0 molded epoxy body |
Pinout & Package
1N6276AHE3/51 uses the standard DO-201AD (Case Style 1.5KE) axial package: cylindrical epoxy body with two radial leads. The cathode is marked by a color band on the body end; anode is unmarked. Leads are matte tin-plated, 0.042" diameter, and rated for solder dip at 275 °C for 10 s.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (unmarked lead) | Current entry point in forward bias; connected to system ground or low-side reference | Completes conduction path during reverse-transient clamping; must be routed with low-inductance trace to minimize overshoot |
| Cathode (banded lead) | Transient voltage sensing node; connected to protected line (e.g., +12 V rail) | Acts as voltage reference for avalanche breakdown; polarity-sensitive - reversal disables protection function |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Enables stable, repeatable avalanche characteristics over 1000+ surge events and extended lifetime in humid or contaminated environments |
| 1500 W peak pulse power (10/1000 µs) | Supports IEC 61000-4-5 Level 4 (4 kV) surge immunity without external series impedance in many 12 V DC designs |
| AEC-Q101 qualification | Validates reliability for automotive powertrain, body control, and ADAS modules requiring zero field failures over 15-year service life |
| Low clamping ratio (VC/VBR ≈ 1.42) | Minimizes overvoltage stress on downstream ICs such as CAN transceivers, microcontrollers, and analog front-ends |
| JESD 201 Class 2 whisker resistance | Prevents tin whisker growth under thermal cycling and long-term storage - critical for safety-critical automotive ECUs |
Applications
| Automotive Power Input Protection | Industrial Sensor Signal Line Clamp |
|---|---|
|
Use Scenario: 12 V battery feed to body control module exposed to load dump (ISO 7637-2 Pulse 5a) and alternator ripple. IC Role / Device Role / Timing Role: Primary overvoltage clamp placed directly at connector entry, ahead of DC-DC converter input. Use Value: Limits transient excursions to ≤22.5 V, preventing damage to 36 V-rated input stages and enabling use of lower-cost 30 V MOSFETs in upstream protection circuits. |
Use Scenario: 4–20 mA current loop interface in factory automation PLC I/O card subjected to EFT/burst noise (IEC 61000-4-4). IC Role / Device Role / Timing Role: Fast-acting shunt protector across loop terminals, triggered within <1 ns to divert sub-microsecond spikes. Use Value: Maintains loop accuracy by limiting voltage excursion to <25 V during 5 kHz burst events, avoiding saturation of op-amp input stages and ADC reference rails. |
| Telecom DC Power Feeds | Consumer Appliance Motor Drive Supply |
|
Use Scenario: -48 V DC power input to remote radio head (RRH) in cellular base station, subject to induced lightning surges per ITU-T K.20. IC Role / Device Role / Timing Role: First-stage surge suppressor in multi-stage protection network, coordinated with GDT and MOV. Use Value: Provides precise clamping at 22.5 V (scaled for -48 V rail) with minimal capacitance (<100 pF), preserving signal integrity on high-speed management bus lines sharing same connector. |
Use Scenario: 24 V DC supply to BLDC motor driver in smart washing machine, exposed to commutation-induced spikes from inductive windings. IC Role / Device Role / Timing Role: Rail clamp on gate driver VDD supply, placed adjacent to driver IC to minimize PCB loop inductance. Use Value: Clamps 1500 W surges without thermal runaway, sustaining 175 °C junction temperature during repeated 100 ms stall conditions - eliminating need for derating or heatsink. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ16A-E3/52 (Vishay) | DO-214AA (SMB) package; 16.7 V VBR min; 28.8 V VC @ 52.1 A; 600 W PPPM | Lower peak power, surface-mount only; suited for space-constrained PCBs but requires layout optimization for thermal dissipation | Select when board area is limited and surge energy is ≤600 W; verify thermal relief pad design meets RθJA < 50 °C/W |
| 1.5KE16AHE3/54 (Vishay) | Same electrical specs and DO-201AD package; differs only in packaging format (13" tape/reel, 1400 pcs vs. 51 pcs in ammo pack) | No functional difference; identical performance, qualification, and reliability data | Choose for high-volume SMT assembly lines requiring tape-and-reel delivery; no design or validation impact |
Compared with SMBJ16A-E3/52, the 1N6276AHE3/51 delivers 2.5× higher surge power handling and superior thermal robustness in through-hole mounting; compared with 1.5KE16AHE3/54, it offers identical protection performance in a smaller quantity packaging format suitable for prototyping and low-volume production.
Availability
1N6276AHE3/51 is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor interfaces, and telecom power feeds requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for 1N6276AHE3/51 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.
The 1N6276AHE3/51 belongs to Vishay's TRANSZORB® TVS family, engineered specifically for robust, standardized transient suppression in harsh environments where AEC-Q101 compliance and repeatable clamping performance are mandatory.
FAQ
What is the breakdown voltage tolerance of the 1N6276AHE3/51?
The 1N6276AHE3/51 has a specified breakdown voltage range of 15.2 V to 16.8 V at 1.0 mA test current (VBR min/max), representing ±5.3% tolerance about the nominal 16 V rating. This tight distribution ensures predictable clamping onset across production lots and temperature extremes from −55 °C to +175 °C.
Is the 1N6276AHE3/51 suitable for bi-directional transient protection?
No - the 1N6276AHE3/51 is strictly a uni-directional TVS diode, indicated by the "A" suffix and cathode band marking. For bi-directional protection on AC or floating lines, select the "CA" variant (e.g., 1N6276CAHE3/51), which provides symmetrical clamping in both polarities without polarity sensitivity.
What is the maximum clamping voltage of the 1N6276AHE3/51 under surge conditions?
The 1N6276AHE3/51 clamps to a maximum of 22.5 V when subjected to its rated 66.7 A peak pulse current (IPPM) under the standard 10/1000 µs waveform. This value is guaranteed across all units and remains stable up to TJ = 125 °C per Vishay's derating curves.
Does the 1N6276AHE3/51 require a heatsink for continuous operation?
No - the 1N6276AHE3/51 is rated for 6.5 W steady-state power dissipation on an infinite heatsink at TL = 75 °C, but its intended use is transient-only clamping. Under normal DC bias (≤13.6 V), leakage remains ≤1.0 µA, generating negligible heat; no heatsink is needed for typical applications.
How does the AEC-Q101 qualification of the 1N6276AHE3/51 impact automotive design?
The AEC-Q101 qualification of the 1N6276AHE3/51 certifies that it has passed accelerated stress tests including high-temperature operating life (HTOL), temperature cycling (TCT), and highly accelerated stress testing (HAST), confirming suitability for under-hood and cabin-mounted automotive ECUs without additional qualification effort by the system designer.
1N6276AHE3/51 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 13.6V
- Voltage - Breakdown (Min):
- 15.2V
- Voltage - Clamping (Max) @ Ipp:
- 22.5V
- Current - Peak Pulse (10/1000µs):
- 66.7A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1N6276AHE3/51 FAQ
1.How can I place an order for 1N6276AHE3/51 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6276AHE3/51 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6276AHE3/51 reliable?
The price and inventory of 1N6276AHE3/51 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6276AHE3/51 is usually 5 days.
3.What payment methods are accepted for 1N6276AHE3/51?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6276AHE3/51 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6276AHE3/51?
1N6276AHE3/51 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6276AHE3/51 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6276AHE3/51?
For technical support, including 1N6276AHE3/51 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6276AHE3/51 requirements.
6.How does Aetrix verify that 1N6276AHE3/51 is sourced from the original manufacturer or authorized distributors?
All 1N6276AHE3/51 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6276AHE3/51 meets industry standards.
7.What is the process for return or replacement of 1N6276AHE3/51?
All 1N6276AHE3/51 units undergo pre-shipment inspection (PSI). If there is an issue with 1N6276AHE3/51, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6276AHE3/51 part is unused and in its original packaging.
Return procedure for 1N6276AHE3/51:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6276AHE3/51 Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
