Vishay General Semiconductor - Diodes Division 1N6278AHE3/51
- Part No.:
- 1N6278AHE3/51
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-201AA, DO-27, Axial
- Datasheet:
-
1N6278AHE3/51.pdf
- Description:
- TVS DIODE 17.1VWM 27.7VC 1.5KE
- Quantity:
- Payment:

- Shipping:

Inventory:6,491
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N6278AHE3/51 from Vishay General Semiconductor is a uni-directional Transient Voltage Suppressor (TVS) diode designed for primary overvoltage protection of sensitive electronics. It features a 19.0 V to 21.0 V breakdown voltage (VBR) at 1.0 mA test current, 17.1 V maximum stand-off voltage (VWM), 27.7 V clamping voltage (VC) at 54.2 A peak pulse current, and 1500 W peak pulse power rating with 10/1000 µs waveform - used in DC power rail and signal line protection for automotive ECUs and industrial sensor interfaces.
For engineers reviewing the 1N6278AHE3/51 datasheet, 1N6278AHE3/51 pinout, 1N6278AHE3/51 application, or 1N6278AHE3/51 equivalent, this part delivers AEC-Q101 qualified surge immunity, low incremental clamping resistance, fast sub-nanosecond response, and RoHS-compliant matte tin-plated leads suitable for J-STD-002 soldering.
Technical Context
The 1N6278AHE3/51 operates as a uni-directional avalanche diode, leveraging glass-passivated junction technology to achieve stable reverse breakdown and low leakage (<1.0 µA at VWM). Its clamping behavior follows a well-defined incremental voltage curve (ΔVC = VC − VBR) under 10/1000 µs transients, with thermal resistance of 15.4 °C/W (junction-to-lead) enabling reliable operation up to 175 °C junction temperature.
Designed for single-pulse transient suppression, it supports non-repetitive surge currents up to 200 A (8.3 ms half-sine) and exhibits a +0.090 %/°C temperature coefficient of VBR, ensuring predictable voltage drift across operating range. The device is rated for 6.5 W steady-state power dissipation on infinite heatsink at TL = 75 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 19.0 V / 21.0 V at 1.0 mA - defines precise avalanche initiation threshold for consistent overvoltage triggering |
| VWM | 17.1 V - maximum continuous reverse working voltage before leakage exceeds 1.0 µA |
| VC at IPPM | 27.7 V at 54.2 A - clamped voltage during 1500 W transient, limiting downstream stress |
| PPPM | 1500 W - peak pulse power handling per 10/1000 µs waveform, critical for lightning/ESD immunity |
| IFSM | 200 A - surge current rating for 8.3 ms half-sine, supporting high-energy inductive switch-off events |
| TJ max. | +175 °C - extended junction temperature rating enables under-hood automotive use |
| Qualification | AEC-Q101 qualified - validated for automotive-grade reliability and lifetime performance |
Pinout & Package
Package: Case Style 1.5KE - axial-leaded, molded epoxy body meeting UL 94 V-0 flammability rating; leads are matte tin plated, solderable per J-STD-002 and JESD 22-B102, with cathode indicated by color band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction path | Connects to lower-potential side of protected circuit; conducts during forward surge or bias conditions |
| Cathode (banded end) | Avalanche clamping node | Reverse-biased terminal that initiates controlled breakdown when VRM exceeds VWM, shunting surge to ground |
Key Features
| Feature | Design Value |
|---|---|
| Glass passivated junction | Enables stable, repeatable avalanche characteristics and long-term parameter retention under thermal cycling |
| 1500 W peak pulse power (10/1000 µs) | Provides robust protection against ISO 7637-2 Pulse 1/2a/5a and IEC 61000-4-5 Level 4 surges |
| AEC-Q101 qualification | Validates suitability for automotive powertrain, body control, and ADAS modules requiring zero-failure reliability |
| Low clamping ratio (VC/VBR ≈ 1.4) | Minimizes overvoltage overshoot during clamping, reducing risk of MOSFET gate oxide damage |
| Sub-nanosecond response time | Clamps transients before IC internal protection circuits activate, preserving system-level ESD resilience |
Applications
| Automotive Power Supply Protection | Industrial Sensor Signal Line Protection |
|---|---|
Use Scenario: Protecting 12 V battery-fed microcontroller power rails in engine control units exposed to load dump and alternator ripple. IC Role / Device Role: Primary clamping element placed between VIN and GND, absorbing >100 V transients before they reach LDOs or MCU VDD. Use Value: Limits voltage to ≤27.7 V during 54.2 A surge, preventing brownout reset or permanent latch-up in 3.3 V/5 V logic domains. | Use Scenario: Shielding analog output lines (e.g., 4–20 mA current loop) of pressure sensors in factory automation PLCs. IC Role / Device Role: Uni-directional TVS connected anode-to-signal, cathode-to-VCC, suppressing positive-going transients induced by relay switching. Use Value: Maintains signal integrity below 17.1 V stand-off while clamping spikes to 27.7 V, avoiding ADC saturation or op-amp rail-to-rail clipping. |
| DC Motor Drive Board Protection | Telecom Power Interface Protection |
Use Scenario: Safeguarding H-bridge gate drivers and freewheeling diodes in brushed DC motor controllers subjected to back-EMF spikes. IC Role / Device Role: Mounted across motor terminals or supply rails to clamp inductive kickback energy. Use Value: Dissipates 1500 W pulses without degradation, enabling compact board layout without external snubbers or varistors. | Use Scenario: Front-end protection of PoE-powered network switches against lightning-induced surges on Ethernet data lines and auxiliary DC inputs. IC Role / Device Role: Used in conjunction with common-mode chokes and gas discharge tubes to form multi-stage protection network. Use Value: Provides fast, low-capacitance clamping (typical CJ < 100 pF at 0 V) without distorting 100BASE-TX signal integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ20A | Lower PPPM (600 W), smaller SMB package (surface-mount), VBR = 22.2–24.5 V | Not AEC-Q101 qualified; suited for space-constrained consumer PCBs rather than automotive under-hood environments | Select when board area is limited and surge energy requirements are ≤600 W |
| 1.5KE20AHE3_A | Same electrical specs and AEC-Q101 qualification; identical VBR, VWM, VC, and PPPM; differs only in packaging (tape-and-reel vs. bulk) | No functional difference; both meet same mechanical and reliability standards per Vishay Doc. 88301 | Choose based on procurement logistics - 1.5KE20AHE3_A is preferred for automated SMT assembly |
Compared with SMBJ20A and 1.5KE20AHE3_A, the 1N6278AHE3/51 offers identical core protection performance but is supplied in axial-leaded bulk format optimized for through-hole prototyping and manual repair, while maintaining full AEC-Q101 compliance and 1500 W capability unmatched by surface-mount alternatives in its voltage class.
Availability
1N6278AHE3/51 is available at Aetrix Electronics and suitable for automotive ECU design, industrial sensor interface development, and DC motor controller production requiring stable component supply, long-lifecycle support, and AEC-Q101 traceability.
Supply support for 1N6278AHE3/51 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The 1N6278AHE3/51 belongs to Vishay's TRANSZORB® family of TVS diodes, engineered specifically for high-energy transient suppression in harsh environments including automotive, industrial, and telecom infrastructure.
FAQ
What is the breakdown voltage tolerance for the 1N6278AHE3/51?
The 1N6278AHE3/51 has a specified breakdown voltage range of 19.0 V to 21.0 V at 1.0 mA test current, representing ±5.3% tolerance around the nominal 20 V rating. This tight VBR window ensures consistent clamping onset across production lots and supports precise overvoltage margining in safety-critical designs like automotive power supplies where deviation could compromise system-level fault coverage.
Is the 1N6278AHE3/51 suitable for bi-directional transient protection?
No, the 1N6278AHE3/51 is a uni-directional TVS diode, intended for DC circuits where polarity is fixed. Its cathode band must be oriented toward the higher-potential rail. For bi-directional AC or floating signal line protection, Vishay specifies CA-suffix variants such as 1N6278CAHE3/51 - which is not interchangeable with the 1N6278AHE3/51 due to different internal structure and clamping symmetry.
Does the 1N6278AHE3/51 require a heatsink for standard operation?
No external heatsink is required for transient suppression duty, as the 1N6278AHE3/51 handles 1500 W pulses for ≤1 ms without thermal runaway. However, for continuous power dissipation above 6.5 W (e.g., sustained leakage or frequent surges), thermal design must account for RθJL = 15.4 °C/W and RθJA = 75 °C/W. In most automotive and industrial applications, PCB copper pour under the leads provides sufficient heat spreading without added heatsinking.
How does the 1N6278AHE3/51 compare to MOV-based protection?
The 1N6278AHE3/51 offers faster response (<1 ns vs. ~20–50 ns for MOVs), no wear-out mechanism, and tighter voltage clamping (27.7 V vs. typical MOV VC ≥35 V at same current). Unlike MOVs, it exhibits no capacitance shift with aging or repeated surges, making it preferable for precision analog and high-speed digital interfaces where signal integrity and long-term stability are critical - especially in AEC-Q101-compliant automotive systems.
What is the lead finish and soldering compatibility of the 1N6278AHE3/51?
The 1N6278AHE3/51 features matte tin-plated leads compliant with J-STD-002 and JESD 22-B102, supporting reflow and wave soldering processes. It passes JESD 201 Class 2 whisker testing (HE3 suffix), and is rated for solder dip at 275 °C for up to 10 seconds. These attributes ensure robust intermetallic formation and long-term solder joint reliability in high-vibration environments like automotive chassis-mounted electronics.
1N6278AHE3/51 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-201AA, DO-27, Axial
- Series:
- TransZorb®
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 17.1V
- Voltage - Breakdown (Min):
- 19V
- Voltage - Clamping (Max) @ Ipp:
- 27.7V
- Current - Peak Pulse (10/1000µs):
- 54.2A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 1.5KE
1N6278AHE3/51 FAQ
1.How can I place an order for 1N6278AHE3/51 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6278AHE3/51 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6278AHE3/51 reliable?
The price and inventory of 1N6278AHE3/51 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6278AHE3/51 is usually 5 days.
3.What payment methods are accepted for 1N6278AHE3/51?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6278AHE3/51 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6278AHE3/51?
1N6278AHE3/51 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6278AHE3/51 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6278AHE3/51?
For technical support, including 1N6278AHE3/51 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6278AHE3/51 requirements.
6.How does Aetrix verify that 1N6278AHE3/51 is sourced from the original manufacturer or authorized distributors?
All 1N6278AHE3/51 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6278AHE3/51 meets industry standards.
7.What is the process for return or replacement of 1N6278AHE3/51?
All 1N6278AHE3/51 units undergo pre-shipment inspection (PSI). If there is an issue with 1N6278AHE3/51, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6278AHE3/51 part is unused and in its original packaging.
Return procedure for 1N6278AHE3/51:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N6278AHE3/51 Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

